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    Semiconductor device and method of manufacturing the same
    91.
    发明授权
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：US08343870B2

    公开(公告)日：2013-01-01

    申请号：US12585034

    申请日：2009-09-01

    申请人： Atsuhiro Kinoshita ,  Junji Koga

    发明人： Atsuhiro Kinoshita ,  Junji Koga

    IPC分类号： H01L21/44

    CPC分类号： H01L29/6659 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6653

    摘要： A semiconductor device which can effectively suppress a short channel effect and junction leakage is provided. A semiconductor device includes a field effect transistor. The field effect transistor includes a first semiconductor region of a first conductivity type, a gate electrode formed on a gate insulating film, and source and drain electrodes. The field effect transistor also includes second semiconductor regions of a second conductivity type. The field effect transistor further includes third semiconductor regions of the second conductivity type having an impurity concentration higher than that of the second semiconductor region and formed between the source electrode and the first and second semiconductor regions and between the drain electrode and the first and second semiconductor regions, and side wall insulating films formed on both the side surfaces of the gate electrode. The source electrode and the drain electrode are separated from the side wall insulating films.

    STORAGE DEVICE HAVING FULL-TEXT SEARCH FUNCTION
    92.
    发明申请
    STORAGE DEVICE HAVING FULL-TEXT SEARCH FUNCTION 有权
    具有全文搜索功能的存储设备

    公开(公告)号：US20110246451A1

    公开(公告)日：2011-10-06

    申请号：US12888897

    申请日：2010-09-23

    申请人： Kosuke Tatsumura ,  Atsuhiro Kinoshita

    发明人： Kosuke Tatsumura ,  Atsuhiro Kinoshita

    IPC分类号： G06F17/30

    CPC分类号： G06F17/30106 ,  G06F17/30109

    摘要： According to one embodiment, a storage device includes an interface, a first and second memory blocks and a controller. The interface receives a content search request. The first memory block stores files and inverted files corresponding to contents included in the files. The second memory block stores a file search table. The controller creates the inverted file for each content included in the files and stores IDs of the files including the content in the inverted file. The controller obtains, by search of the content, a corresponding inverted file from the inverted files stored in the first memory block and stores, in the file search table, the IDs of the files included in the obtained inverted file. The controller outputs the IDs of the files stored in the file search table from the interface as a search result for the content search request.

    摘要翻译： 根据一个实施例，存储设备包括接口，第一和第二存储器块以及控制器。 接口接收内容搜索请求。 第一个存储块存储与文件中包含的内容相对应的文件和反转文件。 第二存储器块存储文件搜索表。 控制器为包含在文件中的每个内容创建反转文件，并将包含内容的文件的ID存储在反转文件中。 控制器通过搜索内容，从存储在第一存储器块中的反转文件中获得相应的反转文件，并在文件搜索表中存储所获得的反转文件中包括的文件的ID。 控制器从接口输出存储在文件搜索表中的文件的ID作为内容搜索请求的搜索结果。

    Field effect transistor and method of manufacturing the same
    100.
    发明申请
    Field effect transistor and method of manufacturing the same 审中-公开
    场效应晶体管及其制造方法

    公开(公告)号：US20070029577A1

    公开(公告)日：2007-02-08

    申请号：US11440150

    申请日：2006-05-25

    申请人： Atsuhiro Kinoshita ,  Junji Koga

    发明人： Atsuhiro Kinoshita ,  Junji Koga

    IPC分类号： H01L29/76

    CPC分类号： H01L29/0847 ,  H01L21/28097 ,  H01L29/458 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/785 ,  H01L29/78609

    摘要： A field effect transistor includes a first semiconductor region of a first conduction type, a gate electrode formed on the channel region of the first semiconductor region via a gate insulating film, source and drain electrodes formed to interpose the channel region, second semiconductor regions of a second conduction type formed between the source and drain electrodes and the channel region, the second semiconductor regions giving rise to an extension region of the source and drain electrodes, and third semiconductor regions of the second conduction type formed between the source and drain electrodes and each of the first and second semiconductor regions, the third semiconductor regions formed by segregation from the source and drain electrodes and having an impurity concentration higher than that of the second semiconductor regions.

    摘要翻译： 场效应晶体管包括第一导电类型的第一半导体区域，经由栅极绝缘膜形成在第一半导体区域的沟道区上的栅极电极，形成为插入沟道区域的源极和漏极电极，第二半导体区域 形成在源电极和漏电极之间的第二导电类型和沟道区，引起源电极和漏电极的延伸区域的第二半导体区域以及形成在源电极和漏电极之间的第二导电类型的第三半导体区域， 的第一和第二半导体区域的第三半导体区域，所述第三半导体区域通过从所述源极和漏极电极偏析形成，并且具有比所述第二半导体区域的杂质浓度更高的杂质浓度。