摘要:
A memory includes bit lines, word lines, and memory cells connected between first and second BLs. The cells arranged in an extending direction of the BLs constitute columns. The second BL is shared between two columns. The cells in a first pair of columns are arranged to be shifted in the extending direction of the BLs by a half-pitch from the cells in a second pair of columns. The device includes a dummy cell having an equal distance from the adjacent memory elements. Further, the device includes a row decoder driving the cells in the first pair of columns by driving paired word lines, and driving the cells in the second pair of columns by driving paired word lines. Each cell includes selection transistors. The selection transistors are connected in parallel between the memory element and the first BL. Gates of the transistors are connected to different WLs.
摘要:
A riding type grass mower includes a right wheel and a left wheel, a rear-discharge type mower unit disposed forwardly of the right/left wheels, a driver's seat disposed between and upwardly of the right/left wheels, an engine mounted rearwardly of the driver's seat, an engine hood for covering the engine, and a restricting unit disposed rearwardly of the driver's seat and at an area downwardly of the engine hood, the restricting unit having a restricting face (including a mesh face) configured to restrict upward rising of cut grass discharged from the mower unit.
摘要:
According to one embodiment, a semiconductor memory device includes memory cells and sense amplifiers. One end of the memory cell is connected to each of bit lines. The other end of the memory cell is connected to a source line. The sense amplifiers are connected to the bit lines. First writing changes the resistance of the memory cells connected to a first state by a current running from the source line to the bit lines. Second writing changes the resistance of the memory cells to a second state by a current running from the bit lines to the source line on the basis of data retained by the sense amplifiers after the first writing. Before the first writing, data is read from the memory cells, and the read data is retained in the sense amplifiers, and the data retained by the sense amplifiers is overwritten in accordance with write data.
摘要:
A word line voltage is applied to a plurality of word lines. A read/write voltage is applied to a plurality of bit lines. The read/write voltage is applied to a plurality of source lines. A word line selector selects the word line and applies the word line voltage. A driver applies a predetermined voltage to the bit line and the source line, thereby supplying a current to the memory cell. A read circuit reads a first current having flowed through the memory cell, and determines data stored in the memory cell. When performing the read, the driver supplies a second current to second bit lines among other bit lines, which are adjacent to the first bit line through which the first current has flowed. The second current generates a magnetic field in a direction to suppress a write error in the memory cell from which data is to be read.
摘要:
An arrangement is provided in which the durability of an operation changing means is improved when this means is provided to the suspension mechanism in a suspension structure for a work vehicle. A maximum position (A1) and minimum position (A2) of the operation of the suspension mechanism are detected, and an intermediate position (B1) between the maximum and minimum positions (A1) and (A2) is detected. When the intermediate position (B1) departs from the target range (H1), the operation of the suspension mechanism is changed to the body raising side or body lowering side so that the intermediate position (B1) moves toward the target range (H1).
摘要:
A refrigerator includes: a storage compartment that is separated and heat-insulated from another area; an atomization device having an electrode unit that sprays mist into the storage compartment; and a protection unit that improves safety of a user.
摘要:
A resistance change memory includes a memory cell which is connected to a first node, and programmed from a first resistance state to a second resistance state, a first replica cell which is connected to a second node, generates a write voltage for programming from the first resistance state to the second resistance state, and is fixed in the first resistance state, and a first constant-current source connected to the second node, wherein when writing the second resistance state in the memory cell, a voltage of the first node is held equal to that of the second node.
摘要:
A hydraulic system of a work machine with a hydraulically controlled implement includes: an operating oil flow passage for flowing operating oil from a main pump; a boost flow oil passage for supplying operating oil to the operating oil flow passage; a connection unit for connecting the implement which is provided downstream of the confluence on the operating oil flow passage; a controller for controlling the high-flow valve; and a high-flow switch which is connected to the controller and is configured to effect or cancel a command of the amount increase on a high-flow valve. Annunciation is made when the connection unit is connected to a high-flow actuator for the implement requiring an amount increase of the operating oil, and the amount increase is effected by the high-flow valve in accordance with an operation of the high-flow switch.
摘要:
A magnetic memory includes a plurality of magnetoresistive elements which include a fixed layer in which a magnetization direction is fixed, a free layer in which a magnetization direction changes, and a nonmagnetic layer formed between the fixed layer and the free layer, and a word line electrically connected to the magnetoresistive elements. Data erase is performed by setting the magnetization direction of the free layer in a first direction by a magnetic field induced by a current flowing through the word line, and data of the magnetoresistive elements are erased by one time data erase. Data write is performed by setting the magnetization direction of the free layer in a second direction by spin-transfer magnetization reversal by supplying a current in one direction to the magnetoresistive elements.
摘要:
The refrigerator includes a vegetable compartment (107) thermally insulated by a rear partition (111), and a mist generation department (139) for atomizing a mist into the vegetable compartment (107), and the mist generation department (139) includes a atomizing electrode (135) for atomizing the mist into the vegetable compartment (107), a voltage applicator (133) for applying a voltage to the atomizing electrode (135), and a cooling pin (134) coupled to the atomizing electrode (135), in which the atomizing electrode (135) is cooled to a temperature lower than the dew point by a outlet air-duct for freezer compartment (141), and the moisture in the air is cooled to condense dew on the atomizing electrode (135), and is atomized as a mist into the vegetable compartment (107), and dew can be condensed from moisture onto the atomizing electrode (135) stably and in a simple configuration, and the freshness of the food is enhanced while the reliability of the refrigerator is enhanced.