摘要:
According to one embodiment, an image scanning apparatus includes a document glass, a substrate, a first semiconductor light emitting element, a second semiconductor light emitting element, a light guiding section, and a light receiving section. The substrate is provided below and obliquely opposed to the document glass. The first semiconductor light emitting element is mounted on a first surface of the substrate opposed to the document glass and emits light to an original document via the document glass. The second semiconductor light emitting element is mounted on a second surface on the opposite side of the first surface and emits light. The light guiding section receives incidence of the light emitted from the second semiconductor light emitting element and emits the light to the original document from a position where a normal of the document glass is present between the light guide section and the first semiconductor light emitting element.
摘要:
A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.
摘要:
According to one embodiment, an image reading apparatus including a first reading section configured to photoelectrically convert and output image information on a first surface of an original, a second reading section configured to photoelectrically convert and output image information on a second surface located on a rear surface of the first surface of the original, and a multiplexing and transfer section configured to multiplex an output signal output by the first reading section and an output signal output by the second reading section and output a multiplexed signal to a single image processing section.
摘要:
According to one embodiment, an image scanning apparatus includes: a document table on which an original document is stacked; a substrate; plural first light emitting elements located on one surface of the substrate, the first light emitting elements each emitting light for irradiating the original document on the document table; and plural second light emitting elements located on the other surface of the substrate, the second light emitting elements each emitting light for irradiating the original document on the document table.
摘要:
A semiconductor device includes a substrate, a plurality of first columns having a first conductivity type, a plurality of second columns having a second conductivity type, a first electrode, and a second electrode. The first columns and the second columns are alternately arranged on the substrate to provide a super junction structure. The first electrode is disposed on the super junction structure, forms schottky junctions with the first columns, and forms ohmic junctions with the second columns. The second electrode is disposed on the substrate on an opposite side of the super junction structure. At least a part of the substrate and the super junction structure has lattice defects to provide a lifetime control region at which a lifetime of a minority carrier is controlled to be short.
摘要:
There is provide a technique which can contribute to reduction of data capacity of image data read from an original document in an image reading apparatus, and can contribute to realization of a flexible image processing to meet user's requests. There are included a first image reading unit to read an image in monochrome from an original document at a first resolution, a second image reading unit to read an image in color from an original document at a second resolution lower than the first resolution, a position information acquisition unit to acquire position information indicating, in respective image data read by the first and the second image reading units from the same original document, corresponding positions of respective pixels on the original document, a color information acquisition unit to acquire color information indicating colors of the respective pixels in the respective image data, and a storage unit to associate the position information acquired by the position information acquisition unit with the color information acquired by the color information acquisition unit with respect to the pixel corresponding to the position information and to store them in a specified storage area.
摘要:
When a monochromatic mode is set, a CPU outputs a SW signal and executes a control to input an output from a monochromatic reading line sensor to a CCD signal processing section. Then, after a black level adjustment period ends and a black reference level reaches a desired value, the CPU starts reading of a black reference signal for shading correction. When a color mode is set, the CPU outputs a SW signal and executes a control to input an output from a color reading line sensor to the CCD signal processing section. After the black level adjustment period ends and the black reference level reaches a desired value, the CPU starts reading of a black reference signal for shading correction.
摘要:
A semiconductor device includes: a semiconductor substrate having a first surface and a second surface, wherein the substrate has a first conductive type; a first trench extending from the first surface of the semiconductor substrate in a depth direction; and an epitaxial semiconductor layer having a second conductive type, wherein the epitaxial semiconductor layer is disposed in the first trench. The first trench includes an inner wall as an interface between the semiconductor substrate and the epitaxial semiconductor layer so that the interface provides a PN junction. The first trench has an aspect ratio equal to or larger than 1.
摘要:
When a monochromatic original is read, a control is effected to transfer a charge accumulated in a monochromatic photodiode array to a rear stage, and not to accumulate charges in respective color photodiode arrays. When a color original is read, a control is effected to transfer charges accumulated in the respective photodiode arrays and not to accumulate a charge in the monochromatic photodiode array.
摘要:
When a monochromatic original is read, a control is effected to transfer a charge accumulated in a monochromatic photodiode array to a rear stage, and not to accumulate charges in respective color photodiode arrays. When a color original is read, a control is effected to transfer charges accumulated in the respective photodiode arrays and not to accumulate a charge in the monochromatic photodiode array.