公开(公告)号：US20050001217A1

公开(公告)日：2005-01-06

申请号：US10880550

申请日：2004-07-01

申请人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

发明人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

IPC分类号： H01L21/04 ,  H01L29/10 ,  H01L29/15 ,  H01L29/24 ,  H01L29/36 ,  H01L29/78 ,  H01L29/812 ,  G03F9/00

CPC分类号： H01L29/7828 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/30625 ,  H01L29/1029 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/812

摘要： Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

摘要翻译： 进行离子注入以在SiC衬底上的高电阻SiC层的部分中形成p阱区域和源极区域，并且在衬底上沉积碳膜。 通过沉积在基板上的碳膜，进行用于激活注入的掺杂离子的退火，然后除去碳膜。 因此，获得了退火几乎没有表面粗糙度的光滑表面。 此外，如果沟道层外延生长，则沟道层的表面粗糙度小于下层的表面粗糙度。 由于提供了具有平滑表面的沟道层，所以可以获得具有高电流驱动能力的MISFET。

公开(公告)号：US06827624B2

公开(公告)日：2004-12-07

申请号：US10196032

申请日：2002-07-15

申请人： Hideo Kurokawa ,  Tetsuya Shiratori ,  Toshifumi Sato ,  Masahiro Deguchi ,  Makoto Kitabatake

发明人： Hideo Kurokawa ,  Tetsuya Shiratori ,  Toshifumi Sato ,  Masahiro Deguchi ,  Makoto Kitabatake

IPC分类号： H01J900

CPC分类号： H01J1/316 ,  H01J2329/00

摘要： The first basic structure of the electron emission element of the present invention includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes. According to these structures, an electron emission element with high stability can be obtained, in which emissions can be emitted efficiently and uniformly even in the absence of a bias voltage (electric field) from outside in an output (emission) direction of the electrons, by utilizing a transverse electric field generated between the electrodes disposed in a horizontal direction at a predetermined interval or an in-plane electric current flowing through the conductive layer disposed between the electrodes.

摘要翻译： 本发明的电子发射元件的第一基本结构包括以预定间隔沿水​​平方向布置的至少两个电极和由分散地设置在电极之间的颗粒或聚集体的多个电子发射部分 。 另一方面，本发明的电子发射元件的第二基本结构包括以预定间隔设置的至少两个电极，设置在电极之间以与其电连接的导电层和多个电子发射 分散地设置在电极之间的导电层的表面上的由颗粒或聚集体构成的部分。 根据这些结构，可以获得具有高稳定性的电子发射元件，其中即使在电子的输出（发射）方向上没有来自外部的偏置电压（电场）的情况下也可以有效且均匀地发射， 通过利用在预定间隔沿水​​平方向布置的电极之间产生的横向电场或流过设置在电极之间的导电层的面内电流。

公开(公告)号：US06600203B2

公开(公告)日：2003-07-29

申请号：US10127126

申请日：2002-04-22

申请人： Kunimasa Takahashi ,  Toshiya Yokogawa ,  Makoto Kitabatake ,  Masao Uchida ,  Osamu Kusumoto ,  Kenya Yamashita

发明人： Kunimasa Takahashi ,  Toshiya Yokogawa ,  Makoto Kitabatake ,  Masao Uchida ,  Osamu Kusumoto ,  Kenya Yamashita

IPC分类号： H01L3100

CPC分类号： H01L29/7813 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L29/0878 ,  H01L29/1029 ,  H01L29/105 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/812 ,  H01L29/872

摘要： A suppression layer is formed on a SiC substrate in accordance with a CVD method which alternately repeats the step of epitaxially growing an undoped layer which is a SiC layer into which an impurity is not introduced and the step of epitaxially growing an impurity doped layer which is a SiC layer into which nitrogen is introduced pulsatively. A sharp concentration profile of nitrogen in the suppression layer prevents the extension of micropipes. A semiconductor device properly using the high breakdown voltage and high-temperature operability of SiC can be formed by depositing SiC layers forming an active region on the suppression layer.

摘要翻译： 根据CVD方法，在SiC衬底上形成抑制层，该方法交替重复外延生长未引入杂质的SiC层的未掺杂层的步骤，以及外延生长杂质掺杂层的步骤 其中氮脉冲地引入其中的SiC层。 抑制层中氮的浓度曲线锐利，防止了微管的延伸。 可以通过在抑制层上沉积形成有源区的SiC层来形成适当地使用SiC的高击穿电压和高温可操作性的半导体器件。

公开(公告)号：US06400091B1

公开(公告)日：2002-06-04

申请号：US09525546

申请日：2000-03-14

申请人： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

发明人： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

IPC分类号： G09G310

CPC分类号： B82Y10/00 ,  H01J3/021 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/901 ,  Y10S977/939

摘要： An electron emission element of the present invention includes a substrate, a cathode formed on the substrate, an anode opposed to the cathode, an electron emission member disposed on the cathode, and a control electrode disposed between the cathode and the anode. During operation, the electric field intensity immediately above the electron emission member is lower than that between the control electrode and the anode. Alternatively, the spatial average of an electric field intensity between the electron emission member and the control electrode is smaller than that between the control electrode and the anode.

摘要翻译： 本发明的电子发射元件包括基板，形成在基板上的阴极，与阴极相对的阳极，设置在阴极上的电子发射部件，以及设置在阴极和阳极之间的控制电极。 在操作期间，电子发射构件正上方的电场强度低于控制电极和阳极之间的电场强度。 或者，电子发射构件和控制电极之间的电场强度的空间平均值小于控制电极和阳极之间的电场强度的空间平均值。

公开(公告)号：US06228720B1

公开(公告)日：2001-05-08

申请号：US09507714

申请日：2000-02-18

申请人： Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Takeshi Uenoyama

发明人： Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Takeshi Uenoyama

IPC分类号： H01L21336

CPC分类号： H01L29/7813 ,  H01L21/049 ,  H01L29/66068

摘要： An insulated-gate semiconductor element with a trench structure is provided, which has a high breakdown voltage even though a silicon carbide substrate is used that is preferable to obtain a semiconductor element with favorable properties. The surface of a silicon carbide substrate is etched to form a concave portion. Then, a particle beam, for example an ion beam, is irradiated from above, and a defect layer is formed at least in a bottom surface of the concave portion. The substrate is heated in an oxidation atmosphere, and an oxide film is formed at least on a side surface and the bottom surface of the concave portion. Then, a gate electrode is formed on the oxide film. With this method, the oxide film at the bottom surface of the concave portion is thicker than the oxide film at the side surfaces of the concave portion, so that a high breakdown voltage can be ensured, even when the surface of the silicon carbide layer is a face with which a superior epitaxial layer can be attained, such as the (111) Si-face of &bgr;-SiC or the (0001) Si-face of &agr;-SiC.

摘要翻译： 提供了具有沟槽结构的绝缘栅半导体元件，即使使用优选获得具有良好特性的半导体元件的碳化硅衬底，其具有高的击穿电压。 蚀刻碳化硅衬底的表面以形成凹部。 然后，从上方照射粒子束，例如离子束，至少在凹部的底面形成有缺陷层。 在氧化气氛中加热基板，至少在凹部的侧面和底面形成氧化膜。 然后，在氧化膜上形成栅电极。 通过该方法，凹部底面的氧化膜比凹部的侧面的氧化膜厚，因此即使当碳化硅层的表面为 可以获得优异的外延层的面，例如β-SiC的（111）Si面或α-SiC的（0001）Si面。

公开(公告)号：US06207282B1

公开(公告)日：2001-03-27

申请号：US08996762

申请日：1997-12-22

申请人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

发明人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

IPC分类号： B32B900

CPC分类号： C30B33/00 ,  C30B29/04 ,  H01J2237/0812 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

摘要翻译： 包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。 通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。 具有一定能量的簇粒子被照射到金刚石的表面上。 辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。 因此，金刚石的表面被有效地平滑和蚀刻。

公开(公告)号：US5328855A

公开(公告)日：1994-07-12

申请号：US918961

申请日：1992-07-24

申请人： Makoto Kitabatake ,  Masahiro Deguchi ,  Takashi Hirao

发明人： Makoto Kitabatake ,  Masahiro Deguchi ,  Takashi Hirao

IPC分类号： H01L21/04 ,  H01L21/265 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/0415

摘要： Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals.

摘要翻译： 通过包括用具有大于0.1W / cm 2的照射密度的光照射金刚石晶体，消除金刚石晶体中的缺陷并清洁金刚石晶体的表面的方法形成半导体金刚石。

公开(公告)号：US4796982A

公开(公告)日：1989-01-10

申请号：US629842

申请日：1984-07-06

申请人： Makoto Kitabatake ,  Kentaro Setsune ,  Kiyotaka Wasa

发明人： Makoto Kitabatake ,  Kentaro Setsune ,  Kiyotaka Wasa

IPC分类号： G02F1/05 ,  G02F1/01 ,  G02F1/03 ,  G02F1/19 ,  G02F1/31 ,  G02F1/315

CPC分类号： G02F1/315 ,  G02F1/0147

摘要： An optical switch comprising a transparent prism having a light input surface and a light output surface, and a reflective control layer having a refractive index higher than that of said prism and a thickness not smaller than the wavelength of the light applied to the optical valve. The reflective control layer is constituted by a thin film of electrooptical material or a thin film of a heat-sensitive optical material. When the reflective control layer is made of an electrooptical material, the optical valve can selectively reflect or transmit the light by controlling the electric field applied to the reflective control layer. When the heat-sensitive material is used as the material of the reflective control layer, a similar switching function can be attained by controlling an electric current supplied to a heat generating member attached to the reflective control layer. This optical valve can switch light at high-speed to selectively obtain reflected light and transmitted light and, hence, can be used as optical parts such as switches and modulators for optical communication system and parts of equipments such as projection type television receivers and printers.

摘要翻译： PCT No.PCT / JP83 / 00402 Sec。 371日期1984年7月6日 102（e）日期1984年7月6日PCT提交1983年11月10日PCT公布。 出版物WO84 / 02010 日期：1984年5月24日。一种光开关，包括具有光输入表面和光输出表面的透明棱镜，以及具有比所述棱镜的折射率高的反射控制层和不小于所述光的波长的厚度 应用于光阀。 反射控制层由电光材料的薄膜或热敏光学材料的薄膜构成。 当反射控制层由电光材料制成时，光阀可以通过控制施加到反射控制层的电场来选择性地反射或透射光。 当使用热敏材料作为反射控制层的材料时，可以通过控制供给到安装在反射控制层上的发热元件的电流来实现类似的切换功能。 该光阀可以高速切换光，以选择性地获得反射光和透射光，并且因此可以用作光通信系统的开关和调制器以及诸如投影型电视接收器和打印机的设备的部件的光学部件。