公开(公告)号：US20130082325A1

公开(公告)日：2013-04-04

申请号：US13252880

申请日：2011-10-04

申请人： Akira Ito ,  Xiangdong Chen

发明人： Akira Ito ,  Xiangdong Chen

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7816 ,  H01L21/76224 ,  H01L23/5252 ,  H01L27/088 ,  H01L27/11206 ,  H01L27/11226 ,  H01L27/1124 ,  H01L27/11246 ,  H01L27/11266 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66681 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a one-time programmable (OTP) device having a lateral diffused metal-oxide-semiconductor (LDMOS) structure comprises a pass gate including a pass gate electrode and a pass gate dielectric, and a programming gate including a programming gate electrode and a programming gate dielectric. The programming gate is spaced from the pass gate by a drain extension region of the LDMOS structure. The LDMOS structure provides protection for the pass gate when a programming voltage for rupturing the programming gate dielectric is applied to the programming gate electrode. A method for producing such an OTP device comprises forming a drain extension region, fabricating a pass gate over a first portion of the drain extension region, and fabricating a programming gate over a second portion of the drain extension region.

摘要翻译： 根据一个实施例，具有横向扩散的金属氧化物半导体（LDMOS）结构的一次性可编程（OTP）器件包括包括通过栅极电极和通过栅极电介质的通过栅极，以及包括编程门 电极和编程栅极电介质。 编程门通过LDMOS结构的漏极扩展区与通过栅极间隔开。 当用于将编程栅极电介质破裂的编程电压施加到编程栅电极时，LDMOS结构为通路提供保护。 一种用于制造这种OTP器件的方法包括形成漏极延伸区域，在漏极延伸区域的第一部分上制造栅极通孔，以及在漏极延伸区域的第二部分上制造编程栅极。

公开(公告)号：US08369441B2

公开(公告)日：2013-02-05

申请号：US13092362

申请日：2011-04-22

申请人： Akira Ito

发明人： Akira Ito

IPC分类号： H04B7/02 ,  H04L1/02

CPC分类号： H04L5/0023 ,  H04L25/0204 ,  H04L25/022 ,  H04L25/0246 ,  H04L25/03178 ,  H04L25/03292 ,  H04L2025/03414 ,  H04L2025/03426

摘要： A receiving apparatus includes a converting unit that multiplies first and second reception signal points for the respective first and second reception signals by a matrix and outputs resulting converted first and second reception signal points; a number-of-candidates determining unit that determines a number of candidates for at least first transmission-signal candidate points, based on a reception quality for the first and second reception signals; and an estimating unit that selects, based on the converted first and second reception signal points, the first transmission-signal candidate points and second transmission-signal candidate points, the number of first transmission-signal candidate points corresponding to the determined number of candidates, and that estimates, as the first and second transmission signals, the first and second transmission-signal candidate points with which distances between the selected first and second transmission-signal candidate points and the corresponding converted first and second reception signal points are smallest.

摘要翻译： 接收装置包括：转换单元，用于通过矩阵将相应的第一和第二接收信号的第一和第二接收信号点相乘，并输出得到的转换的第一和第二接收信号点; 基于第一和第二接收信号的接收质量确定至少第一发送信号候选点的候选数的候选数确定单元; 以及估计单元，其基于所转换的第一和第二接收信号点选择第一发送信号候补点和第二发送信号候补点，与所确定的候选数相对应的第一发送信号候选点的数量， 并且，作为第一和第二传输信号，估计所选择的第一和第二传输信号候选点之间的距离和相应的转换的第一和第二接收信号点的距离最小的第一和第二传输信号候选点。

公开(公告)号：US20120329221A1

公开(公告)日：2012-12-27

申请号：US13604207

申请日：2012-09-05

申请人： Akira Ito

发明人： Akira Ito

IPC分类号： H01L21/04 ,  H01L21/8238

CPC分类号： H01L29/7835 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/66659

摘要： An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes an enhanced well region to effectively increase a voltage at which punch-through occurs when compared to a conventional semiconductor device. The enhanced well region includes a greater number of excess carriers when compared to a well region of the conventional semiconductor device. These larger number of excess carriers attract more carriers allowing more current to flow through a channel region of the semiconductor device before depleting the enhanced well region of the carriers. As a result, the semiconductor device may accommodate a greater voltage being applied to its drain region before the depletion region of the enhanced well region and a depletion region of a well region surrounding the drain region merge into a single depletion region.

摘要翻译： 公开了一种用于增加半导体器件的击穿电压的装置。 半导体器件包括增强的阱区域，以便与传统的半导体器件相比有效地增加穿通的电压。 当与常规半导体器件的阱区相比时，增强阱区包括更多数量的过量载流子。 这些更大数量的过量载流子吸引更多的载流子，允许更多的电流流过半导体器件的沟道区域，然后消耗载流子的增强阱区域。 结果，半导体器件可以容纳在增强阱区的耗尽区之前施加到其漏极区的更大的电压，并且围绕漏极区的阱区的耗尽区合并成单个耗尽区。

公开(公告)号：US20120326667A1

公开(公告)日：2012-12-27

申请号：US13532957

申请日：2012-06-26

申请人： Akira Ito ,  Mitsuru Fujita ,  Shinji Katoh ,  Kenichi Tanaka ,  Yukitsugu Sakaguchi

发明人： Akira Ito ,  Mitsuru Fujita ,  Shinji Katoh ,  Kenichi Tanaka ,  Yukitsugu Sakaguchi

IPC分类号： H02J7/00

CPC分类号： B60L11/1838 ,  B60L1/00 ,  H02J7/0004 ,  H02J7/0068 ,  H02J7/007 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T90/121 ,  Y02T90/128 ,  Y02T90/14 ,  Y02T90/163

摘要： A battery charging system for a vehicle, capable of charging a vehicle battery pack properly in a short time even during driving a vehicle-mounted electrical load. The battery charging system includes the battery pack mounted in the vehicle, the vehicle-mounted electrical load that can be driven by a current from the battery pack, and a battery charge controller that controls charging of the battery pack. When the battery pack is charged by using an external battery charger during operation of the load, the battery charge controller requires the external battery charger to supply a sum current that is a sum of a current for charging the battery pack and a current for driving the load to the vehicle.

摘要翻译： 一种用于车辆的电池充电系统，其能够即使在车载电力负载的驱动期间也能在短时间内正确地对车辆电池组充电。 电池充电系统包括安装在车辆中的电池组，可由来自电池组的电流驱动的车载电气负载，以及控制电池组充电的电池充电控制器。 当在负载运行期间使用外部电池充电器对电池组进行充电时，电池充电控制器要求外部电池充电器提供总和电流，该电流是用于对电池组充电的电流和用于驱动电池的电流之和 载入车辆。

公开(公告)号：US08336914B2

公开(公告)日：2012-12-25

申请号：US12637090

申请日：2009-12-14

申请人： Akira Ito ,  Hidetoshi Iwatani

发明人： Akira Ito ,  Hidetoshi Iwatani

IPC分类号： B60R22/04 ,  B60R22/18 ,  B60R22/24

CPC分类号： B60R22/24 ,  B60R2022/266

摘要： A belt anchor comprises an anchor portion which changes the extending direction of a belt body toward a vehicle front, a bolt which supports the anchor portion, and a nut which fastens the bolt. The belt anchor is fixed to a lift gate inner and a second reinforcement at a position which is located near a pivotal axis of a hinge. Accordingly, a seatbelt device of a vehicle which can ensure both the properly-large slant angle of the belt body and the support strength of the belt anchor, keeping appropriate flexibility of the vehicle layout, can be provided.

摘要翻译： 带状锚固件包括将带体的延伸方向朝向车辆前方改变的锚固部分，支撑锚固部分的螺栓和紧固螺栓的螺母。 带锚固件固定在提升门内部和第二加强件处，位于靠近铰链枢转轴线的位置处。 因此，可以提供能够确保带体的适当大的倾斜角度和皮带锚固件的支撑强度的车辆的安全带装置，保持车辆布局的适当的灵活性。

公开(公告)号：US08332600B2

公开(公告)日：2012-12-11

申请号：US12289134

申请日：2008-10-21

申请人： Akira Ito ,  Etsutaro Akagawa ,  Atsushi Sutoh ,  Masanori Takata

发明人： Akira Ito ,  Etsutaro Akagawa ,  Atsushi Sutoh ,  Masanori Takata

IPC分类号： G06F13/00 ,  G06F13/28

CPC分类号： G06F11/1435 ,  G06F11/1451 ,  G06F11/1453 ,  G06F2201/84

摘要： In acquiring a snapshot, when data in a P-VOL is updated, it is determined whether the same data as target data to be stored in a certain second storage area specified by a certain second address of a D-VOL is already stored in a different second storage area specified by a different second address of the D-VOL, the target data being the differential data generated by the update. When the same data as the target data is stored, the target data is not newly stored in the D-VOL, and the different second address, specifying the different second storage area where the same data is stored, is registered in a snapshot management table (CoW table), in association with a certain first address specifying a certain first storage area where the data from which the target data has been generated is stored.

摘要翻译： 在获取快照时，当更新P-VOL中的数据时，确定要存储在由D-VOL的某个第二地址指定的某个第二存储区域中的目标数据的相同数据是否已经存储在 由D-VOL的不同第二地址指定的不同的第二存储区域，目标数据是由更新生成的差分数据。 当存储与目标数据相同的数据时，目标数据不是新存储在D-VOL中，并且指定存储相同数据的不同的第二存储区域的不同的第二地址被登记在快照管理表 （CoW表），其与指定已经生成了目标数据的数据的某个第一存储区域的某个第一地址相关联。

公开(公告)号：US08301352B2

公开(公告)日：2012-10-30

申请号：US13227677

申请日：2011-09-08

申请人： Akira Ito ,  Takashi Dateki ,  Masahiko Shimizu

发明人： Akira Ito ,  Takashi Dateki ,  Masahiko Shimizu

IPC分类号： G06F19/00

CPC分类号： H04W52/262 ,  H04W52/146 ,  H04W52/225 ,  H04W52/246

摘要： A cubic metric calculator performs a calculation of a time average of power of the amplitude of a transmission signal when a cubic metric value is calculated as a product-sum operation between a transmission power-dependent term including an amplitude value depending on the transmission power of a transmission signal and a time average term including only a modulation parameter not depending on the transmission power of the transmission signal. When the transmission signal is transmitted, the operator inputs the amplitude value to calculate the transmission power-dependent term, reads the value of the time average term from coefficient memory, and performs the product-sum operation using an operation result of the transmission power-dependent term and the read value of the time average term, thereby calculating a time average of the power of the amplitude of the transmission signal.

摘要翻译： 当三次度量值被计算为包括根据发射功率的发射功率的幅度值的发射功率相关项之间的乘积和运算时，三次量度计算器执行传输信号的幅度的功率的时间平均值的计算 传输信号和仅包括不依赖于发送信号的发送功率的调制参数的时间平均项。 当发送发送信号时，操作员输入振幅值来计算发送功率相关项，从系数存储器读取时间平均项的值，并使用发送功率相关项的运算结果进行乘积和运算， 依赖项和时间平均项的读取值，从而计算发送信号的幅度的功率的时间平均。

公开(公告)号：US08283722B2

公开(公告)日：2012-10-09

申请号：US12814675

申请日：2010-06-14

申请人： Akira Ito

发明人： Akira Ito

IPC分类号： H01L29/78

CPC分类号： H01L29/7835 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/66659

摘要： An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes an enhanced well region to effectively increase a voltage at which punch-through occurs when compared to a conventional semiconductor device. The enhanced well region includes a greater number of excess carriers when compared to a well region of the conventional semiconductor device. These larger number of excess carriers attract more carriers allowing more current to flow through a channel region of the semiconductor device before depleting the enhanced well region of the carriers. As a result, the semiconductor device may accommodate a greater voltage being applied to its drain region before the depletion region of the enhanced well region and a depletion region of a well region surrounding the drain region merge into a single depletion region.

摘要翻译： 公开了一种用于增加半导体器件的击穿电压的装置。 半导体器件包括增强的阱区域，以便与传统的半导体器件相比有效地增加穿通的电压。 当与常规半导体器件的阱区相比时，增强阱区包括更多数量的过量载流子。 这些更大数量的过量载流子吸引更多的载流子，允许更多的电流流过半导体器件的沟道区域，然后消耗载流子的增强阱区域。 结果，半导体器件可以容纳在增强阱区的耗尽区之前施加到其漏极区的更大的电压，并且围绕漏极区的阱区的耗尽区合并成单个耗尽区。

公开(公告)号：US08221171B2

公开(公告)日：2012-07-17

申请号：US12734331

申请日：2008-10-31

申请人： Junichi Ono ,  Hiroki Hirai ,  Tetsuji Tanaka ,  Hiroki Shimoda ,  Takuji Otsuka ,  Shigeru Ogihara ,  Akira Ito

发明人： Junichi Ono ,  Hiroki Hirai ,  Tetsuji Tanaka ,  Hiroki Shimoda ,  Takuji Otsuka ,  Shigeru Ogihara ,  Akira Ito

IPC分类号： H01R4/18

CPC分类号： H01R4/185 ,  H01R4/188 ,  H01R43/048 ,  Y10T29/49218

摘要： Provided is a technique of ensuring mechanical strength in a terminal-provided wire and lowering contact resistance between the wire and the crimp terminal, without greatly varying a crimp height of a crimp terminal onto the wire in an axial direction. A crimp terminal according to the invention includes a conductor barrel which is crimped to a conductor of a wire. The conductor barrel has an inner surface which closely contacts the conductor by bending. The inner surface has such a shape a surface thereof which closely contacts a tip end side part of the conductor inwardly projects beyond a surface thereof which closely contacts a base side part of the conductor, thus performing a higher compression of the tip end side part of the conductor than that of the base side part thereof by the bending.

摘要翻译： 提供一种确保终端提供的线中的机械强度并降低线和压接端子之间的接触电阻的技术，而不会在压力端子沿轴向方向上极大地改变压接端子到线材上的压接高度。 根据本发明的压接端子包括被压接到导线的导体筒体。 导体筒具有通过弯曲紧密接触导体的内表面。 内表面具有与导体的前端侧部分紧密接触的表面的形状向内突出超过其紧密接触导体的基底侧部分的表面，从而对导体的前端侧部分进行更高的压缩 该导体比通过弯曲的基部侧部分的导体大。

公开(公告)号：US08208862B2

公开(公告)日：2012-06-26

申请号：US11826609

申请日：2007-07-17

申请人： Akira Ito ,  Masahiko Shimizu

发明人： Akira Ito ,  Masahiko Shimizu

IPC分类号： H04B17/00

CPC分类号： H04L1/0026 ,  H04L1/20

摘要： A wireless system in which a pilot signal is transmitted in such a manner as to restrain error between the SIR of a data channel and that of the pilot signal, thereby improving wireless transmission quality. A specific pilot signal generator generates a specific pilot signal whose power and spreading ratio are identical with those of the data channel. A data channel generator receives propagation environment information and generates the data channel with a transmission format corresponding to the received propagation environment information. A wireless transmitter transmits the specific pilot signal and the data channel. On detecting the specific pilot signal, a propagation environment information notifier measures the SIR of the specific pilot signal, then generates propagation environment information corresponding to the measured SIR, and notifies the wireless transmitting unit of the generated information. A data channel receiver receives the data channel and processes the received data channel.

摘要翻译： 其中以抑制数据信道的SIR与导频信号的SIR之间的误差的方式发送导频信号的无线系统，从而提高无线传输质量。 特定的导频信号发生器产生其功率和扩展率与数据信道的功率和扩频比相同的特定导频信号。 数据信道生成器接收传播环境信息，并以与所接收的传播环境信息对应的传输格式生成数据信道。 无线发射机发送特定的导频信号和数据信道。 在检测到特定导频信号时，传播环境信息通知器测量特定导频信号的SIR，然后产生与所测量的SIR相对应的传播环境信息，并向无线发射单元通知所生成的信息。 数据信道接收机接收数据信道并处理接收到的数据信道。