公开(公告)号：US20060225657A1

公开(公告)日：2006-10-12

申请号：US11304653

申请日：2005-12-16

申请人： Ichiro Mizushima ,  Kyoichi Suguro

发明人： Ichiro Mizushima ,  Kyoichi Suguro

IPC分类号： C23C16/00 ,  H01L21/20

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/403 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31612 ,  H01L21/31645

摘要： An apparatus for depositing a dielectric film includes a first gas introduction line introducing and disconnect a first gas including a compound containing a constituent element of the dielectric film, to a surface of a substrate stored in a reaction chamber, and a second gas introduction line introducing and disconnect a second gas containing one of an oxidizing agent, a reducing agent, and a nitriding agent, to the surface of the substrate. A heating source repeatedly irradiates a pulsed energy having a pulse width of about 0.1 ms to about 100 ms on the substrate. An evacuation system evacuates the first and second gases from the reaction chamber. A control system sequentially and repeatedly executes a cycle including operations of introducing the first gas, introducing the second gas, and irradiating the energy.

摘要翻译： 一种用于沉积电介质膜的设备包括：第一气体引入管线，将包含含有电介质膜的构成元素的化合物的第一气体引入和断开到存储在反应室中的基板的表面，以及引入第二气体导入管线 并将含有氧化剂，还原剂和渗氮剂的第二气体分离到基板的表面。 加热源在衬底上反复照射脉冲宽度为约0.1ms至约100ms的脉冲能量。 排空系统从反应室排出第一和第二气体。 控制系统顺序并重复执行包括引入第一气体，引入第二气体和照射能量的操作的循环。

公开(公告)号：US20060131651A1

公开(公告)日：2006-06-22

申请号：US11340594

申请日：2006-01-27

申请人： Tsutomu Sato ,  Mie Matsuo ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Shinichi Takagi

发明人： Tsutomu Sato ,  Mie Matsuo ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Shinichi Takagi

IPC分类号： H01L27/12

CPC分类号： H01L27/10805 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/1225 ,  G02B2006/12097 ,  H01L21/3247 ,  H01L21/7624 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/84 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78639

摘要： To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.

摘要翻译： 通过在半导体衬底的表面上二维地形成沟槽，然后对半导体衬底进行热处理，将多个沟槽改变为一个平坦的空间。

公开(公告)号：US20060097303A1

公开(公告)日：2006-05-11

申请号：US11312388

申请日：2005-12-21

申请人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

发明人： Takeo Furuhata ,  Ichiro Mizushima ,  Akiko Sekihara ,  Motoya Kishida ,  Tsubasa Harada ,  Takashi Nakao

IPC分类号： H01L29/94

CPC分类号： H01L21/76847 ,  H01L21/76864 ,  H01L27/10867 ,  H01L29/945

摘要： A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

公开(公告)号：US07019365B2

公开(公告)日：2006-03-28

申请号：US10637665

申请日：2003-08-11

申请人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

发明人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L21/764 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/10897 ,  H01L27/1203 ,  H01L27/1207

摘要： A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.

公开(公告)号：US20050253196A1

公开(公告)日：2005-11-17

申请号：US11137539

申请日：2005-05-26

申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

摘要翻译： 半导体器件包括由半导体制成的支撑层，通过在支撑层的表面层中注入杂质形成的扩散层，设置在扩散层上的掩埋绝缘层，设置在掩埋绝缘层上的岛状有源层， 形成在有源层中的沟道区域，形成在有源层中的源极和漏极区域，夹持沟道区域，形成在沟道区域上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和岛的侧表面 类型的有源层，并且与沟道，源极和漏极区域绝缘和隔离，以及连接到有源层的电极。

公开(公告)号：US06903025B2

公开(公告)日：2005-06-07

申请号：US10608020

申请日：2003-06-30

申请人： Ichiro Mizushima

发明人： Ichiro Mizushima

IPC分类号： C23C16/44 ,  H01L21/205 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/4408 ,  C23C16/4405 ,  C23C16/4412 ,  Y10S438/905

摘要： A method of purging a semiconductor manufacturing apparatus comprises a step of etching a CVD-deposited film deposited in a chamber constituting a semiconductor manufacturing apparatus which has performed a process of forming a CVD film using a CVD process over a semiconductor wafer by using an etching gas containing at least a halogen gas, and a step of purging a cleaning gas remaining in the chamber by causing a gas containing hydrogen to flow into the chamber after the step of etching the CVD-deposited film by using the cleaning gas.

摘要翻译： 一种清洗半导体制造装置的方法包括：蚀刻沉积在构成半导体制造装置的室中的CVD沉积膜的步骤，该半导体制造装置使用蚀刻气体在半导体晶片上进行使用CVD工艺形成CVD膜的工艺 至少含有卤素气体的步骤，以及在通过使用清洗气体蚀刻CVD沉积膜的步骤之后，使含有氢的气体流入室内来清洗残留在室中的清洗气体的步骤。

公开(公告)号：US06630714B2

公开(公告)日：2003-10-07

申请号：US10091448

申请日：2002-03-07

申请人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

发明人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

IPC分类号： H01L2701

CPC分类号： H01L21/764 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/10897 ,  H01L27/1203 ,  H01L27/1207

摘要： A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.

摘要翻译： 根据本发明的一个方面的半导体器件包括第一半导体层和多个第二半导体层。 第一半导体层形成在半导体衬底的第一区域中，绝缘膜和介于半导体衬底和第一半导体层之间的腔中的一个。 多个第二半导体层形成在半导体衬底的第二区域中。

公开(公告)号：US06531754B1

公开(公告)日：2003-03-11

申请号：US10083131

申请日：2002-02-27

申请人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Osamu Fujii

发明人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Osamu Fujii

IPC分类号： H01L2701

CPC分类号： H01L21/76264 ,  H01L21/76278 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/10894 ,  H01L27/1203

摘要： A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between the first and second semiconductor regions, and an isolation insulating layer buried in the trench.

公开(公告)号：US06362511B1

公开(公告)日：2002-03-26

申请号：US09388939

申请日：1999-09-02

申请人： Ichiro Mizushima ,  Mariko Takagi

发明人： Ichiro Mizushima ,  Mariko Takagi

IPC分类号： H01L2176

CPC分类号： H01L21/823828

摘要： In A MIS type semiconductor device using a polycrystalline silicon film as a gate electrode, a lower portion of the polycrystalline silicon film has larger grains in average diameter than an upper portion thereof, and there is no peak of oxygen concentration in a film thickness direction in the polycrystalline silicon film.

摘要翻译： 在使用多晶硅膜作为栅电极的MIS型半导体器件中，多晶硅膜的下部具有平均直径大于其上部的晶粒，并且在膜厚方向上没有氧浓度峰值 多晶硅膜。

公开(公告)号：US5413943A

公开(公告)日：1995-05-09

申请号：US997363

申请日：1992-12-28

申请人： Atsushi Murakoshi ,  Ichiro Mizushima ,  Masaharu Watanabe ,  Masahiko Yoshiki

发明人： Atsushi Murakoshi ,  Ichiro Mizushima ,  Masaharu Watanabe ,  Masahiko Yoshiki

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3215 ,  H01L21/70 ,  H01L29/04 ,  H01L29/167

CPC分类号： H01L21/26513 ,  H01L21/32155

摘要： An impurity diffusion layer shallow in diffusion depth and high in activity is formed in a semiconductor device. In the semiconductor device, clusters of icosahedron structure each composed of boron atoms are formed in the silicon crystal of the impurity layer of the semiconductor device so as to function as acceptors. Further, after the clusters of icosahedron structure each composed of 12 boron atoms have been formed by implanting boron ions at high concentration, the device is processed at temperature lower than 700.degree. C. to prevent the boron from being decreased due to combination with silicon. Since an impurity layer shallow in diffusion from the substrate surface and high in activity can be formed and further the clusters of icosahedron structure each composed of 12 boron atoms can be utilized as acceptors, it is possible to realize a high doping even in the manufacturing process for the devices not suitable for high temperature annealing.

摘要翻译： 在半导体器件中形成扩散深浅且活性高的杂质扩散层。 在半导体装置中，由半导体装置的杂质层的硅晶体形成由硼原子构成的二十面体结构的簇，作为受体。 此外，在通过以高浓度注入硼离子形成每个由12个硼原子构成的二十面体结构的簇之后，在低于700℃的温度下处理器件，以防止由于与硅的组合而使硼降低。 由于可以形成从衬底表面扩散浅的杂质层和高活性的杂质层，并且由12个硼原子组成的二十面体结构的簇可以用作受体，即使在制造过程中也可以实现高掺杂 对于不适合高温退火的器件。