Alignment system for lithographic apparatus for measuring a position of an alignment mark
    92.
    发明授权
    Alignment system for lithographic apparatus for measuring a position of an alignment mark 有权
    用于测量对准标记位置的光刻设备的对准系统

    公开(公告)号:US06879868B2

    公开(公告)日:2005-04-12

    申请号:US10822735

    申请日:2004-04-13

    IPC分类号: G03F9/00 H01L21/027 G06F19/00

    摘要: An alignment system for a lithographic apparatus includes a detection system arranged in a path of at least a portion of an alignment radiation. The alignment system also includes a position determining unit in communication with the detection system. The position determining unit is adapted to measure a position of at least one alignment mark on a substrate. The substrate is overlaid with a layer of deposited material. A calculating unit is coupled to the position determining unit. The calculating unit calculates a corrected position of the alignment mark on the basis of the position of the at least one alignment mark being measured and a model of a process apparatus involved in a deposition of the layer of deposited material. The model taking into account an amount of deposition of the layer of deposited material.

    摘要翻译: 用于光刻设备的对准系统包括布置在对准辐射的至少一部分的路径中的检测系统。 对准系统还包括与检测系统通信的位置确定单元。 位置确定单元适于测量衬底上的至少一个对准标记的位置。 衬底覆盖有一层沉积材料。 计算单元耦合到位置确定单元。 计算单元基于被测量的至少一个对准标记的位置和沉积材料层沉积中涉及的处理装置的模型来计算对准标记的校正位置。 该模型考虑到沉积材料层的沉积量。

    Lithographic system, lithographic method and device manufacturing method

    公开(公告)号:US09632430B2

    公开(公告)日:2017-04-25

    申请号:US13120495

    申请日:2009-09-17

    IPC分类号: G03B27/52 G03F7/20

    CPC分类号: G03F7/70625 G03F7/70525

    摘要: A lithographic system includes a lithographic apparatus and a scatterometer. In an embodiment, the lithographic apparatus includes an illumination optical system arranged to illuminate a pattern and a projection optical system arranged to project an image of the pattern on to a substrate. In an embodiment, the scatterometer includes a measurement system arranged to direct a beam of radiation onto a target pattern on said substrate and to obtain an image of a pupil plane representative of radiation scattered from the target pattern. A computational arrangement represents the pupil plane by moment functions calculated from a pair of orthogonal basis function and correlates the moment function to lithographic feature parameters to build a lithographic system identification. A control arrangement uses the system identification to control subsequent lithographic processes performed by the lithographic apparatus.

    Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell
    94.
    发明授权
    Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell 有权
    校准方法,检查方法和装置,光刻设备和光刻处理单元

    公开(公告)号:US09188875B2

    公开(公告)日:2015-11-17

    申请号:US13132011

    申请日:2009-12-01

    IPC分类号: G03F7/20 G01N21/47

    摘要: Disclosed are methods, apparatuses, and lithographic systems for calibrating an inspection apparatus. Radiation is projected onto a pattern in a target position of a substrate. By making a plurality of measurements of the pattern and comparing the measured first or higher diffraction orders of radiation reflected from the pattern of different measurements, a residual error indicative of the error in a scatterometer may be calculated. This error is an error in measurements of substrate parameters caused by irregularities of the scatterometer. The residual error may manifest itself as an asymmetry in the diffraction spectra.

    摘要翻译: 公开了用于校准检查装置的方法,装置和光刻系统。 辐射被投影到基板的目标位置的图案上。 通过对图案进行多次测量并比较从不同测量图案反射的辐射的测量的第一或更高的衍射级数,可以计算指示散射仪中的误差的残差。 该误差是由散射仪的不规则引起的衬底参数的测量误差。 残余误差可能表现为衍射光谱中的不对称性。

    Inspection method and apparatus, and corresponding lithographic apparatus
    95.
    发明授权
    Inspection method and apparatus, and corresponding lithographic apparatus 有权
    检验方法和装置,以及相应的光刻设备

    公开(公告)号:US08749786B2

    公开(公告)日:2014-06-10

    申请号:US12902341

    申请日:2010-10-12

    IPC分类号: G01B11/00

    CPC分类号: G03F7/70633 G01N21/956

    摘要: A method and associated apparatus determine an overlay error on a substrate. A beam is projected onto three or more targets. Each target includes first and second overlapping patterns with predetermined overlay offsets on the substrate. The asymmetry of the radiation reflected from each target on the substrate is measured. The overlay error not resultant from the predetermined overlay offsets is determined. The function that enables calculation of overlay from asymmetry for other points on the wafer is determined by limiting the effect of linearity error when determining the overlay error from the function.

    摘要翻译: 方法和相关设备确定衬底上的覆盖误差。 光束投影到三个或更多个目标上。 每个目标包括在衬底上具有预定覆盖偏移的第一和第二重叠图案。 测量从基板上的每个目标反射的辐射的不对称性。 确定不是从预定的覆盖偏移产生的覆盖误差。 通过限制从功能确定覆盖误差时线性误差的影响,可以确定能够计算晶片上其他点不对称的叠加的功能。

    Apparatus and method for inspecting a substrate
    96.
    发明授权
    Apparatus and method for inspecting a substrate 有权
    用于检查基板的装置和方法

    公开(公告)号:US08665417B2

    公开(公告)日:2014-03-04

    申请号:US12996211

    申请日:2009-06-04

    CPC分类号: G03F7/70633

    摘要: An apparatus measures properties, such as overlay error, of a substrate divided into a plurality of fields. The apparatus includes a radiation source configured to direct radiation onto a first target of each field of the substrate. Each first target (T4G) has at least a first grating and a second grating having respective predetermined offsets, the predetermined offset (+d) of the first grating being in a direction opposite the predetermined offset (−d) of the second grating. A detector is configured to detect the radiation reflected from each first target and to obtain an asymmetry value for each first target from the detected radiation. Further, a module is configured to determine an overlay value for each first target based on at least the obtained asymmetry value and the predetermined offsets and determine a polynomial fit across a plurality of first targets of a corresponding plurality of fields of the substrate for a relationship between the obtained asymmetry value and determined overlay value of each first target.

    摘要翻译: 一种装置测量分成多个场的衬底的性质,例如覆盖误差。 该装置包括被配置为将辐射引导到衬底的每个场的第一靶上的辐射源。 每个第一目标(T4G)具有至少第一光栅和具有相应预定偏移的第二光栅,第一光栅的预定偏移(+ d)在与第二光栅的预定偏移(-d)相反的方向上。 检测器被配置为检测从每个第一目标反射的辐射,并且从检测到的辐射获得每个第一目标的不对称值。 此外,模块被配置为基于至少所获得的不对称值和预定偏移量来确定每个第一目标的覆盖值,并且确定跨越衬底的相应多个场的多个第一目标的多项式拟合,以获得关系 在获得的不对称值和确定的每个第一目标的覆盖值之间。

    Lithographic System, Lithographic Method And Device Manufacturing Method
    98.
    发明申请
    Lithographic System, Lithographic Method And Device Manufacturing Method 有权
    平版印刷系统,平版印刷方法和器件制造方法

    公开(公告)号:US20110299050A1

    公开(公告)日:2011-12-08

    申请号:US13120495

    申请日:2009-09-17

    IPC分类号: G03B27/54

    CPC分类号: G03F7/70625 G03F7/70525

    摘要: A lithographic system includes a lithographic apparatus and a scatterometer. In an embodiment, the lithographic apparatus includes an illumination optical system arranged to illuminate a pattern and a projection optical system arranged to project an image of the pattern on to a substrate. In an embodiment, the scatterometer includes a measurement system arranged to direct a beam of radiation onto a target pattern on said substrate and to obtain an image of a pupil plane representative of radiation scattered from the target pattern. A computational arrangement represents the pupil plane by moment functions calculated from a pair of orthogonal basis function and correlates the moment function to lithographic feature parameters to build a lithographic system identification. A control arrangement uses the system identification to control subsequent lithographic processes performed by the lithographic apparatus.

    摘要翻译: 光刻系统包括光刻设备和散射仪。 在一个实施例中,光刻设备包括布置成照亮图案的照明光学系统和布置成将图案的图像投影到基板上的投影光学系统。 在一个实施例中,散射仪包括测量系统,其布置成将辐射束引导到所述基板上的目标图案上,并且获得代表从目标图案散射的辐射的光瞳平面的图像。 计算装置表示由一对正交基函数计算的瞳面平面,并将力矩函数与光刻特征参数相关联以构建光刻系统识别。 控制装置使用系统识别来控制由光刻设备执行的后续光刻处理。

    Lithographic apparatus and device manufacturing method
    100.
    发明授权
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号:US07683351B2

    公开(公告)日:2010-03-23

    申请号:US11607098

    申请日:2006-12-01

    IPC分类号: G03F7/20

    摘要: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.

    摘要翻译: 光刻设备包括配置成调节辐射束的照明系统,图案形成装置的支撑件,用于衬底的衬底台,投影系统和控制系统。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 投影系统被配置为沿着扫描路径将图案化的辐射束作为图像投影到基板的目标部分上。 扫描路径由光刻设备的曝光场的扫描方向上的轨迹限定。 控制系统耦合到支撑件,基板台和投影系统,用于分别控制支撑件,基板台和投影系统的作用。 控制系统被配置为通过在该区域中的图像的时间调整来校正沿着扫描路径的区域中的图像的局部失真。