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106 条记录 (耗时 0.049 秒)

    Semiconductor pressure sensor and process for fabricating the same
    95.
    发明申请
    Semiconductor pressure sensor and process for fabricating the same 失效
    半导体压力传感器及其制造方法

    公开(公告)号：US20060185437A1

    公开(公告)日：2006-08-24

    申请号：US10543493

    申请日：2004-01-29

    申请人： Masakazu Sato ,  Tatsuya Ito ,  Hideto Noguchi

    发明人： Masakazu Sato ,  Tatsuya Ito ,  Hideto Noguchi

    IPC分类号： G01L9/00

    CPC分类号： G01L9/0054 ,  G01L19/0069

    摘要： This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.

    摘要翻译： 本发明的目的是在不损害其中玻璃基板粘附在其上形成有压阻压力计的压敏片的背面侧的半导体压力传感器中实现尺寸的减小而不损害测量精度或连接可靠性 由硅单晶形成的隔膜的前表面，以在隔膜的后表面和玻璃基板之间形成空间，用于参照第一空间的压力测量施加到隔膜前表面的压力 标准压力。 为了实现该目的，半导体压力传感器包括形成在压敏表电极上的树脂突起，所述压敏电极设置在压敏芯片的前表面上，或者布置在压敏表电极和凸起上，凸起形成为局部或 完全覆盖树脂突起。

    N-hydroxyformamidine derivatives
    96.
    发明申请
    N-hydroxyformamidine derivatives 失效
    N-羟基甲脒衍生物

    公开(公告)号：US20060004078A1

    公开(公告)日：2006-01-05

    申请号：US10527716

    申请日：2003-09-11

    申请人： Masakazu Sato ,  Hiroyuki Kakinuma ,  Hideaki Amada

    发明人： Masakazu Sato ,  Hiroyuki Kakinuma ,  Hideaki Amada

    IPC分类号： A61K31/40 ,  C07D207/04 ,  A61K31/155

    CPC分类号： C07C251/34 ,  C07C259/14 ,  C07D207/06 ,  C07D295/135 ,  C07D319/06

    摘要： An N-hydroxyformamidine derivative of the following formula or a pharmaceutically acceptable salt thereof: (wherein R1 represents a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group or a halogen atom, A represents a C1-10 alkylene group or a group of the following formula: (wherein m, n and p each represent an integer of 0 to 4), and R represents an N,N-di-C1-6 alkylamino group, a dioxanyl group, a C1-4 alkyl-substituted dioxanyl group, a C1-4 alkoxy-C1-4 alkoxy group or a group of the following formula: (wherein s and t each represent an integer of 1 to 4, B represents a methylene group, an oxygen atom, a sulfur atom, a nitrogen atom, a C1-4 alkyl-substituted nitrogen atom, a phenyl-substituted nitrogen atom or a benzyl-substituted nitrogen atom, R2 represents a hydrogen atom or a C1-4 alkyl group, and r represents an integer of 0 to 2)). The present invention aims to provide an agent for inhibiting 20-HETE-producing enzymes, 20-HETE being involved in the effects of causing microvascular constriction or dilation in major organs (e.g., kidneys, cerebral blood vessels) or of inducing cell proliferation, etc.

    摘要翻译： 下式的N-羟基甲脒衍生物或其药学上可接受的盐：（其中R 1表示氢原子，C 1-4烷基，C 1〜 C 1-4烷氧基或卤素原子，A表示C 1-10烷基或下式的基团：（其中m，n和p各自表示 0〜4的整数），R表示N，N-二-C 1-6烷基氨基，二烷基，C 1-4烷基取代的 二烷基，C 1-4烷氧基-C 1-4烷氧基或下式的基团：（其中s和t各自表示1〜 4，B表示亚甲基，氧原子，硫原子，氮原子，C 1-4烷基取代的氮原子，苯基取代的氮原子或苄基取代的氮 原子，R 2表示氢原子或C 1-4烷基，r表示0〜2的整数））。 本发明的目的在于提供一种抑制20-HETE产生酶的药剂，20-HETE涉及在主要器官（例如，肾脏，脑血管）中引起微血管收缩或扩张或诱导细胞增殖等的作用 。

    Process for selective production of aryl 5-thio-beta-d- aldohexopyranosides
    97.
    发明申请
    Process for selective production of aryl 5-thio-beta-d- aldohexopyranosides 失效
    选择性生产芳基5-硫代-β-D-二氢吡喃糖苷的方法

    公开(公告)号：US20050256317A1

    公开(公告)日：2005-11-17

    申请号：US10521809

    申请日：2003-08-08

    申请人： Masakazu Sato ,  Hiroyuki Kakinuma

    发明人： Masakazu Sato ,  Hiroyuki Kakinuma

    IPC分类号： A61K31/7034 ,  A61P3/10 ,  A61P13/12 ,  A61P43/00 ,  C07H15/20 ,  C07H15/203 ,  C07D335/02

    CPC分类号： C07H15/203 ,  C07H15/20

    摘要： The present invention provides a method for preparing an aryl 5-thio-β-D-aldohexopyranoside derivative of Formula (III), which comprises reacting a 5-thio-D-aldohexopyranose derivative of Formula (I) with Ar—OH of Formula (II) in the presence of a phosphine represented by PR11R12R13 and an azo reagent represented by R21—N═N—R22 in accordance with the following scheme.

    摘要翻译： 本发明提供了制备式（III）的5-硫代-β-D-吡喃葡萄糖苷衍生物的方法，该方法包括使式（I）的5-硫代-D-去二羟基吡喃糖衍生物与式（I）的Ar-OH反应， II）在由PR 11和12 R 12表示的膦和由R 21表示的偶氮试剂存在下， SUP> -NNR <22>根据以下方案。

    Semiconductor wafer shape evaluating method and shape evaluating device
    98.
    发明申请
    Semiconductor wafer shape evaluating method and shape evaluating device 有权
    半导体晶片形状评估方法和形状评估装置

    公开(公告)号：US20050255610A1

    公开(公告)日：2005-11-17

    申请号：US10517655

    申请日：2003-06-10

    申请人： Masakazu Sato ,  Masato Onishi

    发明人： Masakazu Sato ,  Masato Onishi

    IPC分类号： G01B21/20 ,  G01B11/06 ,  G01B11/24 ,  G01B21/08 ,  G01R31/26 ,  H01L21/66

    CPC分类号： G01B7/08 ,  G01B11/06 ,  G01B11/24

    摘要： The present invention is a method of evaluating a shape of a semiconductor wafer comprising the steps of: measuring shape data of a semiconductor wafer by scanning a front surface and/or a back surface of the semiconductor wafer; calculating a differential profile through a differential process of the measured shape data; analyzing the obtained differential profile and obtaining a surface characteristic of the wafer, and; evaluating a shape of the semiconductor wafer. Thereby, there are provided a method of evaluating a shape of a semiconductor wafer and an apparatus for evaluating a shape thereof, wherein a shape of a semiconductor wafer, particularly a shape of a peripheral portion of the wafer, can be quantitatively evaluated from a viewpoint different from conventional SFQR etc., and the shape quality of the wafer can be accurately evaluated over a specification of a strict design rule.

    摘要翻译： 本发明是一种评估半导体晶片的形状的方法，包括以下步骤：通过扫描半导体晶片的前表面和/或背表面来测量半导体晶片的形状数据; 通过测量的形状数据的差分过程计算差分轮廓; 分析获得的差分轮廓并获得晶片的表面特性， 评估半导体晶片的形状。 因此，提供了一种评估半导体晶片的形状的方法及其形状评估装置，其中半导体晶片的形状，特别是晶片的周边部分的形状可以从视点进行定量评估 与常规SFQR等不同，并且可以根据严格的设计规则的规格来精确地评估晶片的形状质量。