公开(公告)号：US06740928B2

公开(公告)日：2004-05-25

申请号：US10350140

申请日：2003-01-24

申请人： Shigeo Yoshii ,  Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Haruyuki Sorada

发明人： Shigeo Yoshii ,  Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Haruyuki Sorada

IPC分类号： H01L29788

CPC分类号： B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  G11C16/0408 ,  G11C16/0466 ,  G11C2216/06 ,  H01L29/42332 ,  H01L29/7883

摘要： The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding particles are different from the charge-passing particles in parameters such as the particle diameter, the capacitance, the electron affinity, and the sum of electron affinity and forbidden bandwidth, to attain swift charge injection and release as well as stable charge holding in the charge-holding particles.

摘要翻译： 本发明的半导体器件包括：通过阻挡层使用于在p型硅衬底上形成的电荷的粒子或界面状态; 以及通过另一个阻挡层形成在电荷通过颗粒上方形成的电荷的颗粒。 电荷保持粒子与粒径，电容，电子亲和力，电子亲和力和禁带宽度之和等参数不同于充电粒子，以获得快速的电荷注入和释放以及稳定的电荷 保持在电荷保持颗粒中。

公开(公告)号：US06610466B2

公开(公告)日：2003-08-26

申请号：US09939843

申请日：2001-08-28

申请人： Masami Sakurada ,  Kiyoshi Morimoto ,  Fumitaka Ueda ,  Toru Yamada

发明人： Masami Sakurada ,  Kiyoshi Morimoto ,  Fumitaka Ueda ,  Toru Yamada

IPC分类号： G03C146

CPC分类号： G03C7/3041 ,  G03C1/12 ,  G03C1/16 ,  G03C1/18 ,  G03C1/22 ,  G03C1/38 ,  G03C7/3022 ,  G03C7/3029 ,  G03C7/388 ,  G03C7/3885

摘要： A silver halide photographic lightsensitive material comprising at least one silver halide photographic emulsion layer containing a silver halide photographic emulsion prepared by mixing a dispersion of silver halide grains, the silver halide grains exhibiting such spectral absorption maximum wavelength and light absorption intensity that, when the spectral absorption maximum wavelength is less than 500 nm, the light absorption intensity is 60 or more, while when the spectral absorption maximum wavelength is 500 nm or more, the light absorption intensity is 100 or more, with an emulsified dispersion, wherein the silver halide photographic emulsion, when agitated at 40° C. for 30 min, exhibits a variation of absorption spectrum integrated intensity ranging from 400 nm to 700 nm of 10% or less.

公开(公告)号：US06582895B2

公开(公告)日：2003-06-24

申请号：US09773689

申请日：2001-02-02

申请人： Naoyuki Hanaki ,  Takanori Hioki ,  Kiyoshi Morimoto

发明人： Naoyuki Hanaki ,  Takanori Hioki ,  Kiyoshi Morimoto

IPC分类号： G03C1005

CPC分类号： G03C1/005 ,  G03C1/10 ,  G03C1/14 ,  G03C1/16

摘要： A silver halide photographic emulsion which comprises at least one methine compound represented by the following formula (I): wherein X1 and X2 each represents an oxygen atom, a sulfur atom, a selenium atom, or N—R3, wherein R3 represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a heterocyclic group; V1 and V2 each represents a monovalent substituent; n1 and n2 each represents 0, 1, 2, 3 or 4; L1, L2 and L3 each represents a methine group; l represents an integer of 0 to 3; M represents a counter ion for balancing electric charge; m represents a necessary number for balancing electric charge; and R1 and R2 each represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group, but at least either R1 or R2 represents the alkyl group represented by any of the following formulae: Ra=(Qa)rCO{overscore (N)}SO2Raa Rb=(Qb)sSO2{overscore (N)}CORbb Rc=(Qc)tCO{overscore (N)}CORcc Rd=(Qd)uSO2{overscore (N)}SO2Rdd Re=(Qe)vX wherein Raa, Rbb, Rcc and Rdd each represents an alkyl group, an aryl group, a heterocyclic group, an alkoxyl group, an aryloxy group, a heterocyclyloxy group, or an amino group; Qa, Qb, Qc, Qd and Qe each represents a divalent linking group; X represents SO3−, CO2−, or PO32−; and r, s, t, u and v each represents an integer of 1 or more, but when X represents SO3−, v represents 1 or 2.

摘要翻译： 一种卤化银照相乳剂，其包含由下式（I）表示的至少一种次甲基化合物：其中X 1和X 2各自表示氧原子，硫原子，硒原子或N-R 3，其中R 3表示氢原子 取代或未取代的烷基，取代或未取代的芳基或杂环基; V1和V2各自表示一价取代基; n1和n2各自表示0,1,2,3或4; L1，L2和L3各自表示次甲基; l表示0〜3的整数， M表示用于平衡电荷的抗衡离子; m表示用于平衡电荷的必要数量; 并且R 1和R 2各自表示取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂环基，但R 1或R 2中的至少一个表示由下式表示的烷基：其中Raa，Rbb Rcc和Rdd各自表示烷基，芳基，杂环基，烷氧基，芳氧基，杂环氧基或氨基; Qa，Qb，Qc，Qd和Qe各自表示二价连接基团; X代表SO3-，CO2-或PO32-; 并且r，s，t，u和v各自表示1以上的整数，但当X表示SO 3 - 时，v表示1或2。

公开(公告)号：US06548825B1

公开(公告)日：2003-04-15

申请号：US09587268

申请日：2000-06-05

申请人： Shigeo Yoshii ,  Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Haruyuki Sorada

发明人： Shigeo Yoshii ,  Kiyoshi Morimoto ,  Kiyoyuki Morita ,  Haruyuki Sorada

IPC分类号： H01L310328

CPC分类号： B82Y10/00 ,  G11C13/02 ,  G11C13/025 ,  G11C16/0408 ,  G11C16/0466 ,  G11C2216/06 ,  H01L29/42332 ,  H01L29/7883

摘要： The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding particles are different from the charge-passing particles in parameters such as the particle diameter, the capacitance, the electron affinity, and the sum of electron affinity and forbidden bandwidth, to attain swift charge injection and release as well as stable charge holding in the charge-holding particles.

摘要翻译： 本发明的半导体器件包括：通过阻挡层使用于在p型硅衬底上形成的电荷的粒子或界面状态; 以及通过另一个阻挡层形成在电荷通过颗粒上方形成的电荷的颗粒。 电荷保持粒子与粒径，电容，电子亲和力，电子亲和力和禁带宽度之和等参数不同于充电粒子，以获得快速的电荷注入和释放以及稳定的电荷 保持在电荷保持颗粒中。

公开(公告)号：US6091077A

公开(公告)日：2000-07-18

申请号：US955267

申请日：1997-10-21

申请人： Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Koichiro Yuki ,  Kiyoshi Araki

发明人： Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Koichiro Yuki ,  Kiyoshi Araki

IPC分类号： H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76 ,  H01L29/88 ,  H01L29/06

CPC分类号： H01L21/76264 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/7606 ,  H01L29/882 ,  H01L21/76267 ,  H01L21/76281

摘要： The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO.sub.2 type quantum device can be manufactured with ease at a low cost.

摘要翻译： 本发明提供一种半导体器件，其具有各种功能，例如双稳态存储器和逻辑电路，其中在公共衬底上形成有MOS半导体元件，谐振隧道二极管，热电子晶体管等。 在SOI衬底上形成由隔离氧化膜包围的n型Si层和p型Si层。 形成掩模氧化膜和栅极氧化膜，并且通过使用掩模氧化膜作为掩模对n型Si层进行结晶各向异性蚀刻，以将n型Si层改变为 薄Si板。 在该n型Si层的侧面上形成第一和第二隧道氧化物膜之后，共用隧道二极管的第一和第二多晶硅电极和用作MOS半导体元件的栅电极的多晶硅电极由共同的 多晶硅膜。 因此，可以容易地以低成本制造Si / SiO 2型量子器件。

公开(公告)号：US06062826A

公开(公告)日：2000-05-16

申请号：US713128

申请日：1996-09-16

申请人： Kiyoshi Morimoto ,  Yasushi Watanabe ,  Yoshika Sanada ,  Sanji Tokuno ,  Kazue Murata

发明人： Kiyoshi Morimoto ,  Yasushi Watanabe ,  Yoshika Sanada ,  Sanji Tokuno ,  Kazue Murata

IPC分类号： B06B1/12 ,  B06B1/14 ,  F16K31/524 ,  F04B49/00

CPC分类号： F16K31/52408 ,  Y10T74/18296

摘要： A pulsating vibration air generator in which wave height, frequency and wave shape of the pulsating vibration air can be optionally modified and such pulsating vibration air can be periodically and continuously emitted. The pulsating vibration air generator has a valve chamber with an inlet port and an outlet port where a valve plug and a valve seat with a control opening are provided and a cam mechanism which moves the valve plug to open or close the opening of the valve seat, whereby positive or negative pulsating vibration air is emitted from the outlet port while pressurized air is supplied into the inlet port or air is sucked from the inlet port.

摘要翻译： 脉动振动空气发生器可以可选地改变脉动振动空气的波浪高度，频率和波形，并且可以周期性地连续地发射这种脉动的振动空气。 脉动振动空气发生器具有带有入口和出口的阀室，其中设置有阀塞和具有控制开口的阀座，以及凸轮机构，其使阀塞移动以打开或关闭阀座的开口 从而当加压空气被供给到入口或从入口吸入空气时，从出口端口发出正或负脉动的振动空气。

公开(公告)号：US6005111A

公开(公告)日：1999-12-21

申请号：US16272

申请日：1998-01-30

申请人： Masato Taniguchi ,  Kiyoshi Morimoto ,  Keizo Kimura ,  Kazumi Nii ,  Shigeo Hirano

发明人： Masato Taniguchi ,  Kiyoshi Morimoto ,  Keizo Kimura ,  Kazumi Nii ,  Shigeo Hirano

IPC分类号： C07D215/38 ,  G03C7/413 ,  A47C1/12 ,  C07D215/02

CPC分类号： C07D215/38 ,  G03C7/413 ,  G03C2200/33

摘要： A method for forming a color image comprises the step of developing an image-wise exposed silver halide color photographic photosensitive material at the presence of a 6-aminotetrahydroquinoline color developing agent which is the following compound or its analoge. According to this method, the rapid process can be attained and an image of a low fog density can be obtained. ##STR1##

摘要翻译： 形成彩色图像的方法包括在6-氨基四氢喹啉显色剂（其为下列化合物或其分析物）的存在下显影图像曝光的卤化银彩色照相感光材料的步骤。 根据该方法，可以实现快速处理，并且可以获得低雾密度的图像。

公开(公告)号：US5962200A

公开(公告)日：1999-10-05

申请号：US893189

申请日：1997-07-15

申请人： Masato Taniguchi ,  Kiyoshi Morimoto ,  Keizo Kimura ,  Kazumi Nii ,  Shigeo Hirano

发明人： Masato Taniguchi ,  Kiyoshi Morimoto ,  Keizo Kimura ,  Kazumi Nii ,  Shigeo Hirano

IPC分类号： C07D215/38 ,  G03C7/413

CPC分类号： C07D215/38 ,  G03C7/413 ,  G03C2200/33

摘要： A method for forming a color image comprising developing an image-wise exposed silver halide color photographic photosensitive material in the presence of certain 6-aminotetrahydroquinoline color developing compounds or analogues thereof. A rapid process can be attained and an image of a low fog density can be obtained. Two such 6-aminotetrahydroquinoline compounds are: ##STR1##

摘要翻译： 一种形成彩色图像的方法，包括在某些6-氨基四氢喹啉显色化合物或其类似物的存在下显影图像曝光的卤化银彩色照相感光材料。 可以实现快速处理，并且可以获得低雾密度的图像。 两种这样的6-氨基四氢喹啉化合物是：

公开(公告)号：US5888852A

公开(公告)日：1999-03-30

申请号：US808580

申请日：1997-02-28

申请人： Koichiro Yuki ,  Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Yoshihiko Hirai

发明人： Koichiro Yuki ,  Kiyoyuki Morita ,  Kiyoshi Morimoto ,  Yoshihiko Hirai

IPC分类号： H01L21/306 ,  H01L21/329 ,  H01L29/88 ,  H01L21/20

CPC分类号： H01L29/6609 ,  H01L21/30608 ,  H01L29/882 ,  Y10S438/962

摘要： The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etching the semiconductor layer using the mask pattern to form a semiconductor microstructure extending in a first direction parallel to a surface of the substrate, wherein, in the step of selectively etching the semiconductor layer, an etching rate in a second direction vertical to the first direction and parallel to the surface of the substrate is substantially zero with respect to an etching rate in the first direction, and a width of the semiconductor microstructure is substantially equal to a shortest distance between the first opening and the second opening in the second direction.

摘要翻译： 形成本发明的半导体微结构的方法包括以下步骤：在具有半导体层作为其上部的衬底上形成具有第一开口和第二开口的掩模图案; 以及使用所述掩模图案选择性地蚀刻所述半导体层，以形成在平行于所述基板的表面的第一方向上延伸的半导体微结构，其中，在选择性地蚀刻所述半导体层的步骤中，沿垂直于所述基板的第二方向的蚀刻速率 第一方向并平行于衬底的表面相对于第一方向上的蚀刻速率基本上为零，并且半导体微结构的宽度基本上等于第一开口和第二开口在第二方向上的最短距离 。

公开(公告)号：US5738978A

公开(公告)日：1998-04-14

申请号：US773361

申请日：1996-12-26

申请人： Kazuaki Yoshida ,  Jun Noguchi ,  Kiyoshi Morimoto

发明人： Kazuaki Yoshida ,  Jun Noguchi ,  Kiyoshi Morimoto

IPC分类号： G03C7/00 ,  G03C7/407 ,  G03C7/413 ,  G03C5/29

CPC分类号： G03C7/407 ,  G03C7/413

摘要： A method for processing a silver halide color photographic material comprising a step of processing an exposed silver halide color photographic material with an automatic processor, a color developing solution used in the processing step containing triisopropanolamine, and a conveying rate of the automatic processor being 1,100 mm/min. or more.

摘要翻译： 一种用于处理卤化银彩色照相材料的方法，包括用自动处理器处理曝光的卤化银彩色照相材料的步骤，在含有三异丙醇胺的加工步骤中使用的显色溶液，以及自动处理器的输送速度为1100mm /分钟 或者更多。