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    Light emitting device
    91.
    发明授权
    Light emitting device 有权

    公开(公告)号：US11469342B2

    公开(公告)日：2022-10-11

    申请号：US17110368

    申请日：2020-12-03

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min Jang ,  Chang Yeon Kim ,  Myoung Hak Yang

    IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/14

    Abstract: A method of manufacturing a light emitting device including forming first light emitting parts on a first substrate, the first light emitting part including a first n-type semiconductor layer and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first electrode and exposing a portion of the first n-type semiconductor layer, forming second light emitting parts on a second substrate, the second light emitting part including a second n-type semiconductor layer and a second mesa structure including a second active layer, a second p-type semiconductor layer, and a second electrode and exposing a portion of the second n-type semiconductor layer, attaching a first removable carrier onto the second light emitting parts and enclosing the second light emitting parts, removing the second substrate from the second light emitting parts, and bonding the second light emitting parts to the first light emitting parts.

    LIGHT EMITTING DEVICE FOR DISPLAY AND LED DISPLAY APPARATUS HAVING THE SAME
    96.
    发明申请
    LIGHT EMITTING DEVICE FOR DISPLAY AND LED DISPLAY APPARATUS HAVING THE SAME 有权

    公开(公告)号：US20210125972A1

    公开(公告)日：2021-04-29

    申请号：US17075605

    申请日：2020-10-20

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min JANG ,  Chang Yeon Kim

    IPC: H01L25/075 ,  H01L23/00

    Abstract: A light emitting device including first, second, and third light emitting stacks each including first and second conductivity type semiconductor layers, a first lower contact electrode in ohmic contact with the first light emitting stack, and second and third lower contact electrodes respectively in ohmic contact with the second conductivity type semiconductor layers of the second and third light emitting stacks, in which the first lower contact electrode is disposed between the first and second light emitting stacks, the second and third lower contact electrodes are disposed between the second and third light emitting stacks, the first, second, and third lower contact electrodes include transparent conductive oxide layers, and a thickness of the second lower contact electrode or the third lower contact electrode is greater than a thickness of the first lower contact electrode.

    Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer
    98.
    发明授权
    Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer 有权

    公开(公告)号：US10749074B2

    公开(公告)日：2020-08-18

    申请号：US16409603

    申请日：2019-05-10

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Mi Hee Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Jong Kyun You ,  Joon Hee Lee

    IPC: H01L27/32 ,  H01L33/20 ,  H01L33/32 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46

    Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

    Light emitting device and method of fabricating the same
    99.
    发明授权
    Light emitting device and method of fabricating the same 有权

    公开(公告)号：US10700249B2

    公开(公告)日：2020-06-30

    申请号：US15854631

    申请日：2017-12-26

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chang Yeon Kim ,  Ju Yong Park ,  Sung Su Son

    IPC: H01L33/38 ,  H01L33/62 ,  H01L23/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/64 ,  H01L33/48

    Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

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