公开(公告)号：US20160269665A1

公开(公告)日：2016-09-15

申请号：US15160575

申请日：2016-05-20

Applicant: SONY CORPORATION

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H04N5/374 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H04N5/374 ,  H04N3/155 ,  H04N5/335 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Abstract translation: 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元包括两个像素。 上下光电转换器和传输晶体管分别连接到上和下光电转换器，复位晶体管和放大晶体管形成两个像素。 全面信号线连接到复位晶体管和放大晶体管的各个漏极。 控制全面信号线以及传输信号线和复位信号线，以读出信号实现了像素中布线的简化，像素尺寸的缩小等。

公开(公告)号：US20160247842A1

公开(公告)日：2016-08-25

申请号：US15148127

申请日：2016-05-06

Applicant: Sony Corporation

Inventor： Tsutomu Imoto ,  Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/14887 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14689 ,  H01L27/14812

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

公开(公告)号：US09373655B2

公开(公告)日：2016-06-21

申请号：US14567777

申请日：2014-12-11

Applicant: Sony Corporation

Inventor： Tsutomu Imoto ,  Keiji Mabuchi

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14887 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14689 ,  H01L27/14812

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Abstract translation: 一种成像装置包括：光电转换区域，其根据照射光产生每个像素的光伏电力; 以及在围绕光电转换区域的状态下设置在相邻光电转换区域之间的第一元件隔离区域。

公开(公告)号：US20160088254A1

公开(公告)日：2016-03-24

申请号：US14957278

申请日：2015-12-02

Applicant: Sony Corporation

Inventor： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC: H04N5/3745 ,  H04N5/374 ,  H04N5/369

CPC classification number: H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

Abstract: A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

Abstract translation: 固态图像传感器包括像素阵列以及由阵列中的多个像素共享的电荷 - 电压转换器，复位门和放大器。 复位栅极电源的电压设定为高于放大器电源的电压电平。 此外，从像素中的光电检测器溢出的电荷可能被丢弃到电荷 - 电压转换器中。 图像传感器还可以包括行扫描器，其被配置为使得在扫描像素阵列中的行以从其中读出信号的同时，行扫描器在共享具有像素的电荷到电压转换器的像素的光电检测器中复位电荷 读出行。 在从读出行上的像素读出信号的同时或之前进行电荷复位。

公开(公告)号：US20150334270A1

公开(公告)日：2015-11-19

申请号：US14747958

申请日：2015-06-23

Applicant: Sony Corporation

Inventor： Tetsuo Nomoto ,  Eiji Makino ,  Keiji Mabuchi ,  Tsutomu Haruta ,  Shinjiro Kameda

IPC: H04N5/217 ,  H04N5/374 ,  H04N5/357 ,  H04N3/14 ,  H04N5/335

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14638 ,  H04N3/155 ,  H04N5/2173 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378

Abstract: A MOS type solid state imaging device in which unit pixels, each having a photodiode, a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node are arrayed in a matrix. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V).

Abstract translation: 一种MOS型固态成像装置，其中每个具有光电二极管的单位像素，用于将光电二极管的信号传送到浮动节点的转移晶体管，用于将浮动节点的信号输出到垂直信号线的放大器晶体管，以及 将浮动节点复位的复位晶体管排列成矩阵。 复位晶体管的栅极电压由电源电位（例如3V），接地电位（0V）和负电源电位（例如-1V）的三个值来控制。

公开(公告)号：US20150237272A1

公开(公告)日：2015-08-20

申请号：US14703213

申请日：2015-05-04

Applicant: Sony Corporation

Inventor： Yusuke Oike ,  Yorito Sakano ,  Keiji Mabuchi

IPC: H04N5/353 ,  H04N5/369

CPC classification number: H04N5/3535 ,  H01L27/14612 ,  H01L27/14656 ,  H04N5/353 ,  H04N5/3532 ,  H04N5/3698 ,  H04N5/37452

Abstract: A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.

Abstract translation: CMOS图像传感器具有作为单位像素的矩阵的图像阵列，每个单元像素至少包括光电二极管，用于保持存储在光电二极管中的电荷的存储器，用于将存储器中的电荷转换为电压的浮动扩散区域，第一转移 用于将电荷从光电二极管转移到存储器的栅极，用于将电荷从存储器传送到浮动扩散区域的第二传输栅极，以及用于复位浮置扩散区域中的电荷的复位晶体管。 驱动单位像素以将存储器和浮动扩散区域之间的边界处的势垒的电势设置为电位，使得当第一传输门被导通时，溢出存储器的电荷被传送到浮动扩散区域 。 CMOS图像传感器以全局快门模式运行，用于捕获运动图像。

公开(公告)号：US09099373B2

公开(公告)日：2015-08-04

申请号：US14197967

申请日：2014-03-05

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H01L27/00 ,  H01L27/148 ,  H01L27/146 ,  H04N5/363 ,  H04N5/3745

CPC classification number: H01L27/14638 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/363 ,  H04N5/37452 ,  H04N5/37457

Abstract: A solid-state imaging device including a pixel region in which a plurality of pixels are arranged. The pixels each includes a photoelectric conversion section, a transfer transistor, a plurality of floating diffusion sections receiving a charge from the photoelectric conversion section through the transfer transistor, a reset transistor resetting the floating diffusion sections, a separating transistor performing on-off control of a connection between the plurality of floating diffusion sections, and an amplifying transistor outputting a signal corresponding to a potential of the floating diffusion sections.

Abstract translation: 一种固态成像装置，包括其中排列有多个像素的像素区域。 像素各自包括光电转换部，转移晶体管，通过转移晶体管接收来自光电转换部的电荷的多个浮动扩散部，复位浮置扩散部的复位晶体管，进行开关控制的分离晶体管 多个浮动扩散部之间的连接，以及输出对应于浮动扩散部的电位的信号的放大晶体管。

公开(公告)号：US09088726B2

公开(公告)日：2015-07-21

申请号：US14011402

申请日：2013-08-27

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Takeshi Yanagita ,  Yortio Sakano

IPC: H04N5/235 ,  H01L27/146 ,  H04N5/359

CPC classification number: H04N5/2353 ,  H01L27/14656 ,  H04N5/3591

Abstract: A solid-state image capturing device includes: a pixel array unit including plural pixels each converting light selectively incident through a mechanical shutter into charges to be stored in a storage portion and having an overflow path through which charges exceeding a saturation charge amount are discharged; and a driving unit starting an exposure by simultaneously resetting all pixels of the pixel array unit, maintaining the overflow path in an opened state during the exposure period, and closing the overflow path during a period while signals are read from the pixels after ending the exposure by closing the mechanical shutter.

Abstract translation: 固态图像捕获装置包括：像素阵列单元，包括多个像素，每个像素将通过机械遮光器有选择地入射的光转换成要存储在存储部分中的电荷，并且具有溢出路径，电荷超过饱和电荷量的电荷被放电; 以及驱动单元，通过同时复位像素阵列单元的所有像素来开始曝光，在曝光周期期间将溢出路径保持在打开状态，并且在结束曝光之后从像素读取信号期间关闭溢出路径 通过关闭机械快门。

公开(公告)号：US20150179691A1

公开(公告)日：2015-06-25

申请号：US14414710

申请日：2013-07-08

Applicant: Sony Corporation

Inventor： Takeshi Yanagita ,  Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/1469 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.

Abstract translation: 本文描述了固态成像装置和制造固态成像装置的方法。 作为示例，固态成像装置包括形成在传感器基板上的第一布线层和形成在电路基板上的第二布线层。 传感器基板耦合到电路基板，第一布线层和第二布线层位于传感器基板和电路基板之间。 第一电极形成在第一布线层的表面上，第二电极形成在第二布线层的表面上。 第一电极与第二电极电接触。

公开(公告)号：US20150124132A1

公开(公告)日：2015-05-07

申请号：US14401370

申请日：2013-05-15

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Masaki Sakakibara

IPC: H04N5/353 ,  H04N5/378 ,  H04N5/374

CPC classification number: H04N5/353 ,  H01L27/14603 ,  H01L27/14609 ,  H04N5/3532 ,  H04N5/35581 ,  H04N5/3559 ,  H04N5/374 ,  H04N5/37452 ,  H04N5/376 ,  H04N5/378

Abstract: The present technology relates to an imaging element, a driving method, and an electronic apparatus that can decrease a voltage and increase a saturation signal amount.In each pixel configuring a pixel array unit, a photodiode receiving light from a subject and performing photoelectric conversion on the light and a first charge accumulating unit accumulating charges generated by the photodiode are provided. A reset gate unit to initialize the first charge accumulating unit is connected to the first charge accumulating unit through a third transfer gate unit. When the first charge accumulating unit is initialized, a voltage is applied to gate electrodes of the third transfer gate unit and the reset gate unit and a positive voltage is applied to a well region provided with a pixel to assist voltage application. Thereby, initialization is appropriately performed and a reset level is suppressed low. As a result, a voltage can be decreased and a saturation signal amount can be increased. The present technology can be applied to a solid-state imaging element.

Abstract translation: 本技术涉及能够降低电压并增加饱和信号量的成像元件，驱动方法和电子设备。 在构成像素阵列单元的每个像素中，提供了从被摄体接收光并对光进行光电转换的光电二极管和累积由光电二极管产生的电荷的第一电荷累积单元。 用于初始化第一电荷累积单元的复位门单元通过第三传输门单元连接到第一电荷累积单元。 当第一电荷累积单元被初始化时，向第三传输栅极单元和复位栅极单元的栅电极施加电压，并且向设置有像素的阱区域施加正电压以辅助电压施加。 由此，适当地执行初始化，并且将复位电平抑制得较低。 结果，可以降低电压并且可以增加饱和信号量。 本技术可以应用于固态成像元件。