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公开(公告)号：US09721858B2
公开(公告)日：2017-08-01
申请号：US14675468
申请日：2015-03-31
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Pascal Fornara , Christian Rivero
CPC classification number: H01L23/04 , B81B3/0021 , B81B2201/0221 , H01G5/18 , H01L23/5223 , H01L27/0629 , H01L28/40 , H01L2924/0002 , H01L2924/00
Abstract: An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.
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公开(公告)号：US09490415B2
公开(公告)日：2016-11-08
申请号：US14930204
申请日：2015-11-02
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Pascal Fornara , Christian Rivero
IPC: H01L27/16 , H01L35/32 , H01L23/522 , H01L23/528
CPC classification number: H01L35/32 , H01L23/5226 , H01L23/528 , H01L27/16 , H01L2924/0002 , H01L2924/00
Abstract: An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected in series so as to form a chain of regions having, alternatingly, one and the other of the two types of conductivity.
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93.发明申请Metallic Device Having Mobile Element in a Cavity of the BEOL of an Integrated Circuit 有权在集成电路的BEOL的腔中具有移动元件的金属器件公开(公告)号：US20160293540A1
公开(公告)日：2016-10-06
申请号：US14920621
申请日：2015-10-22
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Pascal Fornara , Sebastian Orellana
IPC: H01L23/522 , H01H59/00 , H01L23/532
CPC classification number: H01H49/00 , H01H59/0009 , H01H2001/0052 , H01H2001/0057 , H01H2001/0078 , H01H2061/006 , H01L23/5222 , H01L23/5223 , H01L23/5226 , H01L23/525 , H01L23/53238 , H01L23/53252 , H01L23/53266
Abstract: In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.
Abstract translation: 为了例如，为了改善位于金属化水平的两个金属片之间的欧姆接触，这两个金属片配备有位于金属化水平处的至少部分地至少部分地在上面的通孔级的两个偏移通孔。 每个偏移通孔包括例如不可氧化或基本上不可氧化的化合物，例如Ti / TiN的阻挡层。
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公开(公告)号：US09459157B2
公开(公告)日：2016-10-04
申请号：US14161502
申请日：2014-01-22
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Pascal Fornara , Christian Rivero
CPC classification number: G01K13/00 , H01H1/0036 , H01H37/46 , H01H2037/008
Abstract: A device for monitoring the temperature surrounding a circuit, including: a charge storage element; a charge evacuation device; and a thermo-mechanical switch connecting the storage element to the evacuation element, the switch being capable of closing without the circuit being electrically powered, when the temperature exceeds a threshold.
Abstract translation: 一种用于监测电路周围温度的装置，包括：电荷存储元件; 充电撤离装置; 以及将所述存储元件连接到所述排气元件的热机械开关，当所述温度超过阈值时，所述开关能够关闭而不使所述电路被电力供电。
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公开(公告)号：US20160203917A1
公开(公告)日：2016-07-14
申请号：US15077702
申请日：2016-03-22
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Pascal Fornara , Christian Rivero
CPC classification number: H01L27/0629 , H01G5/011 , H01G5/16 , H01L21/768 , H01L21/7682 , H01L21/7687 , H01L23/4821 , H01L23/5223 , H01L23/528 , H01L23/642 , H01L28/60 , H01L2924/0002 , H01L2924/1461 , H01L2924/00
Abstract: A variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer overlying a substrate, a second main capacitor electrode spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode. The movable capacitor electrode can be caused to be in a first position ohmically electrically connected to the fixed main capacitor electrode such that the variable capacitor has a first capacitance value or in a second position spaced from the fixed main capacitor electrode such that the variable capacitor has a second capacitance value.
Abstract translation: 可变电容器包括设置在覆盖在基板上的第一金属层中的固定主电容器电极，与固定主电容器电极间隔开的第二主电容器电极和设置在与固定主电容器电极相邻的第一金属层中的可移动电容器电极。 可以使可动电容电极处于与固定主电容器电极欧姆电连接的第一位置，使得可变电容器具有第一电容值或与固定主电容器电极间隔开的第二位置，使得可变电容器具有 第二电容值。
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Patent Agency Ranking
公开(公告)号：US20160093609A1
公开(公告)日：2016-03-31
申请号：US14957544
申请日：2015-12-02
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Pascal Fornara , Christian Rivero
IPC: H01L27/06 , H01L49/02 , H01L21/768 , H01L23/482 , H01L23/522
CPC classification number: H01L27/0629 , H01G5/011 , H01G5/16 , H01L21/768 , H01L21/7682 , H01L21/7687 , H01L23/4821 , H01L23/5223 , H01L23/528 , H01L23/642 , H01L28/60 , H01L2924/0002 , H01L2924/1461 , H01L2924/00
Abstract: A method is provided for forming an integrated circuit chip with a variable capacitor disposed in a metallization. A back end of line metallization is formed over the semiconductor substrate. The variable capacitor is formed within a cavity of the back end of line metallization. The variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer of the back end of line metallization, a second main capacitor electrode electrically connected to a second metal layer of the back end of line metallization and vertically spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode.
Abstract translation: 提供一种形成具有设置在金属化中的可变电容器的集成电路芯片的方法。 线路金属化的后端形成在半导体衬底上。 可变电容器形成在线金属化后端的腔内。 可变电容器包括设置在线金属化后端的第一金属层中的固定主电容器电极，电连接到线金属化后端的第二金属层并与固定主电容器垂直间隔的第二主电容器电极 电极和设置在与固定主电容器电极相邻的第一金属层中的可动电容电极。
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97.发明授权公开(公告)号：US08941205B2
公开(公告)日：2015-01-27
申请号：US13646828
申请日：2012-10-08
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Pascal Fornara
Abstract: An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material.
Abstract translation: 集成电路可以包括含有热电材料的区域，并且被配置为经受在其工作期间在集成电路的一部分中的电流流动导致的温度梯度，以及耦合到该区域的导电输出 传递由热电材料产生的电能。
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98.发明申请COMPONENT, FOR EXAMPLE NMOS TRANSISTOR, WITH ACTIVE REGION WITH RELAXED COMPRESSION STRESSES, AND FABRICATION METHOD 有权用于示例性NMOS晶体管的组件，具有放大压缩应力的活性区域，以及制造方法公开(公告)号：US20140367784A1
公开(公告)日：2014-12-18
申请号：US14300663
申请日：2014-06-10
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Giulhem Bouton , Pascal Fornara
IPC: H01L29/78 , H01L29/10 , H01L29/06 , H01L29/66 , H01L21/762
CPC classification number: H01L29/0653 , H01L21/76224 , H01L21/76229 , H01L23/5226 , H01L29/0649 , H01L29/0847 , H01L29/66568 , H01L29/7846 , H01L2924/0002 , H01L2924/00
Abstract: An integrated circuit includes a substrate and at least one NMOS transistor having, in the substrate, an active region surrounded by an insulating region. The insulating region is formed to includes at least one area in which the insulating region has two insulating extents that are mutually separated from each other by a separation region formed by a part of the substrate.
Abstract translation: 集成电路包括衬底和至少一个NMOS晶体管，其在衬底中具有由绝缘区域包围的有源区域。 绝缘区域形成为包括至少一个区域，其中绝缘区域具有通过由基板的一部分形成的分离区域彼此分离的两个绝缘区域。
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99.发明申请公开(公告)号：US20140266562A1
公开(公告)日：2014-09-18
申请号：US14289784
申请日：2014-05-29
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Antonio Di-Giacomo , Christian Rivero , Pascal Fornara
IPC: H01H1/00
CPC classification number: H01H1/0036 , H01H61/00 , H01H2001/0068 , H01H2037/008 , H01H2061/006 , H01H2061/008
Abstract: An integrated circuit, comprising an electrical-switching mechanical device in a housing having at least one first thermally deformable assembly including a beam held in at least two different locations by at least two arms secured to edges of the housing, the beam and the arms being metallic and situated within the same first metallization level and an electrically conductive body, wherein the said first thermally deformable assembly has at least one first configuration at a first temperature and a second configuration when at least one is at a second temperature different from the first temperature, wherein the beam is at a distance from the body in the first configuration and in contact with the said body and immobilized by the said body in the second configuration and establishing or prohibiting an electrical link passing through the body and through the beam.
Abstract translation: 一种集成电路，包括壳体中的电切换机械装置，其具有至少一个第一热变形组件，所述组件包括通过固定到所述壳体的边缘的至少两个臂固定在至少两个不同位置的梁，所述梁和所述臂是 金属并位于相同的第一金属化水平和导电体内，其中所述第一热变形组件在第一温度和第二构型具有至少一个第一构型，当至少一个处于与第一温度不同的第二温度时 ，其中所述梁在所述第一构造中与所述主体一定距离并且与所述主体接触并且以所述第二构造被所述主体固定，并且建立或禁止穿过所述主体并通过所述梁的电连杆。
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100.发明申请METHOD FOR PRODUCING METAL CONTACTS WITHIN AN INTEGRATED CIRCUIT, AND CORRESPONDING INTEGRATED CIRCUIT 审中-公开在集成电路中生产金属接触的方法和相应的集成电路公开(公告)号：US20140191329A1
公开(公告)日：2014-07-10
申请号：US14143100
申请日：2013-12-30
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Roger Delattre
CPC classification number: H01L29/7845 , H01L21/28052 , H01L21/28518 , H01L21/76805 , H01L21/76843 , H01L21/76855 , H01L23/485 , H01L29/41766 , H01L29/41775 , H01L29/66575 , H01L29/66636 , H01L29/78
Abstract: An integrated circuit includes a MOS transistor having a gate region and source and drain regions separated from the gate region by insulating spacers. At least two metal contact pads respectively contact with two metal silicide regions (for example, a cobalt silicide) which lie within the source and drain regions. The silicide regions are located at the level of lower parts of the two metal contact pads and are separate by a distance from the insulating spacers.
Abstract translation: 集成电路包括具有栅极区域的MOS晶体管和通过绝缘间隔物与栅极区域分离的源极和漏极区域。 至少两个金属接触焊盘分别与位于源极和漏极区域内的两个金属硅化物区域（例如，硅化钴）接触。 硅化物区域位于两个金属接触焊盘的下部的水平处，并且与绝缘间隔物隔开一段距离。
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