-
公开(公告)号:US08111215B2
公开(公告)日:2012-02-07
申请号:US11772361
申请日:2007-07-02
申请人: Hajime Kimura , Jun Koyama , Masahiko Hayakawa , Yu Yamazaki , Yukari Ando , Keisuke Miyagawa , Shunpei Yamazaki
发明人: Hajime Kimura , Jun Koyama , Masahiko Hayakawa , Yu Yamazaki , Yukari Ando , Keisuke Miyagawa , Shunpei Yamazaki
IPC分类号: G09G3/30
CPC分类号: G09G3/3241 , G09G3/3258 , G09G3/3283 , G09G3/3291 , G09G2300/0842 , G09G2320/0271 , G09G2320/029 , G09G2320/041 , G09G2320/043 , G09G2330/02
摘要: The luminance of light emitting elements varies when the characteristics thereof change due to changes in environment temperature and changes with time. It is an object of the present invention to suppress the effect of the change in current value of a light emitting element due to the changes of environment temperature and changes with time. The invention provides a display device provided with a compensation function for the changes in environment temperature and a compensation function for the change with time. The display device of the invention includes a light emitting element, a driving transistor connected to the light emitting element, and a monitoring light emitting element. By using this monitoring light emitting element, an effect of the change of current value of the light emitting element due to the change of environment temperature and change with time can be suppressed.
摘要翻译: 当其特性由于环境温度的变化而变化时,发光元件的亮度变化。 本发明的目的是抑制由于环境温度的变化而随着时间的变化而导致的发光元件的电流值的变化的影响。 本发明提供了一种具有用于环境温度变化的补偿功能和随时间变化的补偿功能的显示装置。 本发明的显示装置包括发光元件,连接到发光元件的驱动晶体管和监视发光元件。 通过使用该监视发光元件,可以抑制由于环境温度的变化和随时间变化的发光元件的电流值的变化的影响。
-
公开(公告)号:US07834355B2
公开(公告)日:2010-11-16
申请号:US12348574
申请日:2009-01-05
申请人: Masahiko Hayakawa , Yu Yamazaki , Yukari Ando , Keisuke Miyagawa , Jun Koyama , Mitsuaki Osame , Aya Anzai , Shunpei Yamazaki , Satoshi Seo , Hiroko Abe
发明人: Masahiko Hayakawa , Yu Yamazaki , Yukari Ando , Keisuke Miyagawa , Jun Koyama , Mitsuaki Osame , Aya Anzai , Shunpei Yamazaki , Satoshi Seo , Hiroko Abe
IPC分类号: H01L29/04
CPC分类号: G09G3/3233 , G09G3/006 , G09G2300/08 , G09G2300/0842 , G09G2310/0256 , G09G2310/0275 , G09G2310/061 , G09G2320/029 , G09G2320/041 , G09G2320/043 , G09G2330/02 , G09G2330/12 , H01L27/3244 , H01L2251/5323
摘要: A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L1 and the channel width W1 of the driving transistor, and the channel length L2 and the channel width W2 of the limiter transistor satisfy L1/W1:L2/W2=1:2 to 1:10.
摘要翻译: 可以抑制由于环境温度的变化而随着时间的变化而影响发光元件的电流的变化的显示装置。 本发明的显示装置具有发光元件,与发光元件串联连接的驱动晶体管,监视发光元件,与监视发光元件串联连接的限幅晶体管,用于供给 到监视发光元件的恒定电流,以及用于输出等于输入电位的电位的电路。 发光元件的第一电极通过驱动晶体管连接到电路的输出端,并且监控发光元件的第一电极通过限幅晶体管连接到电路的输入端。 驱动晶体管的沟道长度L1和沟道宽度W1以及限制晶体管的沟道长度L2和沟道宽度W2满足L1 / W1:L2 / W2 = 1:2至1:10。
-
公开(公告)号:US07425743B2
公开(公告)日:2008-09-16
申请号:US11090287
申请日:2005-03-28
CPC分类号: H01L29/04 , G02F1/136209 , G02F1/136213 , H01L27/1255 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要: Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations in device characteristics due to hot carrier injection or the like can be prevented effectively when the temperature is in a range of 80° C.-250° C. (preferably 100° C.-200° C.). Therefore, a projection TV that is very high in reliability can be realized.
摘要翻译: 构成液晶模块的薄膜晶体管具有沟道形成区域,其是在特定方向上布置多个棒状或扁平棒状晶体的晶体结构体。 在薄膜晶体管中,当温度在80℃-250℃(优选100℃-2200℃)的范围内时,可以有效地防止热载流子注入等导致的器件特性的劣化 。)。 因此,可以实现高可靠性的投影电视机。
-
公开(公告)号:US07422630B2
公开(公告)日:2008-09-09
申请号:US11446135
申请日:2006-06-05
申请人: Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame
发明人: Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame
IPC分类号: C30B25/02
CPC分类号: H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L21/3221 , H01L27/12 , H01L27/1277
摘要: Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse the nickel element concentrated locally. After that, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film 106 is formed in this step. At this time, the nickel element is gettered to the thermal oxide film 106. Then, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.
摘要翻译: 通过利用金属元素获得的晶体硅膜中存在促进硅结晶的金属元素的浓度降低。 在将镍引入非晶硅膜103之后,首先进行结晶热处理。 然后,照射激光以使局部浓缩的镍元素扩散。 之后,在比之前的热处理温度高的氧化气氛中进行另一次热处理。 在该步骤中形成热氧化膜106。 此时,镍元素被吸收到热氧化膜106上。 然后,去除热氧化膜106。 由此,可以得到金属元素浓度低,结晶性高的结晶硅膜107。
-
公开(公告)号:US20080012801A1
公开(公告)日:2008-01-17
申请号:US11772361
申请日:2007-07-02
申请人: Hajime Kimura , Jun Koyama , Masahiko Hayakawa , Yu Yamazaki , Yukari Ando , Keisuke Miyagawa , Shunpei Yamazaki
发明人: Hajime Kimura , Jun Koyama , Masahiko Hayakawa , Yu Yamazaki , Yukari Ando , Keisuke Miyagawa , Shunpei Yamazaki
IPC分类号: G09G3/30
CPC分类号: G09G3/3241 , G09G3/3258 , G09G3/3283 , G09G3/3291 , G09G2300/0842 , G09G2320/0271 , G09G2320/029 , G09G2320/041 , G09G2320/043 , G09G2330/02
摘要: The luminance of light emitting elements varies when the characteristics thereof change due to changes in environment temperature and changes with time. It is an object of the present invention to suppress the effect of the change in current value of a light emitting element due to the changes of environment temperature and changes with time. The invention provides a display device provided with a compensation function for the changes in environment temperature and a compensation function for the change with time. The display device of the invention includes a light emitting element, a driving transistor connected to the light emitting element, and a monitoring light emitting element. By using this monitoring light emitting element, an effect of the change of current value of the light emitting element due to the change of environment temperature and change with time can be suppressed.
摘要翻译: 当其特性由于环境温度的变化而变化时,发光元件的亮度变化。 本发明的目的是抑制由于环境温度的变化而随着时间的变化而导致的发光元件的电流值的变化的影响。 本发明提供了一种具有用于环境温度变化的补偿功能和随时间变化的补偿功能的显示装置。 本发明的显示装置包括发光元件,连接到发光元件的驱动晶体管和监视发光元件。 通过使用该监视发光元件,可以抑制由于环境温度的变化和随时间变化的发光元件的电流值的变化的影响。
-
公开(公告)号:US07262556B2
公开(公告)日:2007-08-28
申请号:US11147317
申请日:2005-06-08
申请人: Mitsuaki Osame , Aya Anzai , Jun Koyama , Makoto Udagawa , Masahiko Hayakawa , Shunpei Yamazaki
发明人: Mitsuaki Osame , Aya Anzai , Jun Koyama , Makoto Udagawa , Masahiko Hayakawa , Shunpei Yamazaki
IPC分类号: G09G3/10
CPC分类号: H01L33/08 , G09G3/3233 , G09G2300/0426 , G09G2300/0842 , G09G2310/0254 , G09G2320/043 , H01L27/3211 , H01L27/3262 , H01L27/3265 , H01L27/3295 , H01L2924/0002 , H01L2924/00
摘要: A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.
摘要翻译: 实现高开口率并且图像质量几乎不受TFT的特性变化影响的发光器件。 在像素部分中不设置大的保持电容器Cs,而是增加了沟道长度和沟道宽度,并且将沟道电容用作Cs。 通道长度选择为非常大于沟道宽度以改善饱和区域中的电流特性,并且向驱动TFT施加高V S GS以获得所需的漏极电流。 因此,驱动TFT的漏极电流几乎不受阈值电压的变化的影响。 此外,在布置像素时,布线布置在分隔壁下方,并且驱动TFT布置在布线下方,以避免开口率的降低,尽管驱动TFT的尺寸增加。 在3晶体管像素的情况下,开关TFT和擦除TFT被线性布置以进一步增加开口率。
-
公开(公告)号:US20070176176A1
公开(公告)日:2007-08-02
申请号:US10453940
申请日:2003-06-04
申请人: Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
发明人: Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
IPC分类号: H01L29/04
CPC分类号: H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
摘要: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
摘要翻译: 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件,电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置,可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化,或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。
-
公开(公告)号:US20070120127A1
公开(公告)日:2007-05-31
申请号:US11698864
申请日:2007-01-29
申请人: Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人: Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
CPC分类号: H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要: It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译: 提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题,并且进一步防止由于晶界引起的TFT迁移率的明显降低,导通电流降低或截止电流增加 。 在基板上形成绝缘膜,在绝缘膜上形成半导体膜。 由此,优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。 具体地,在半导体膜上形成条状或矩形凹凸。 连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。
-
公开(公告)号:US20070070346A1
公开(公告)日:2007-03-29
申请号:US11600833
申请日:2006-11-17
申请人: Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人: Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号: G01J3/30
CPC分类号: H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译: 提供了一种使用激光晶化方法的半导体器件制造系统,其可以避免在TFT的沟道形成区域中形成晶界,从而防止晶界大大降低TFT的迁移率,降低导通电流,并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光,但也可以在照射半导体膜时使用脉冲振荡激光。
-
公开(公告)号:US07078727B2
公开(公告)日:2006-07-18
申请号:US10282189
申请日:2002-10-29
申请人: Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
发明人: Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
IPC分类号: H01L29/04 , H01L31/036
CPC分类号: H01L21/02672 , H01L21/2022 , H01L21/28158 , H01L21/3221 , H01L21/3226 , H01L27/12 , H01L27/1277 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675
摘要: Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.
摘要翻译: 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理,在硅膜上形成热氧化膜。 在该步骤中,在硅膜中,包含的杂质如氧或氯的杂质沿着晶体生长延伸而分离,结晶度提高,并且镍元素的吸杂进行。 形成薄膜晶体管,使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果,具有诸如迁移率大于200cm 2 / Vs的优异特性和小于100mV / dec的S值的TFT。 可以获得。
-
-
-
-
-
-
-
-
-