Devices including at least one intermixing layer
    94.
    发明授权
    Devices including at least one intermixing layer 有权
    装置包括至少一个混合层

    公开(公告)号:US09218829B2

    公开(公告)日:2015-12-22

    申请号:US14632054

    申请日:2015-02-26

    Abstract: Devices that include a near field transducer (NFT), the NFT including a peg having five surfaces, the peg including a first material, the first material including gold (Au), silver (Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), or combinations thereof; an overlying structure; and at least one intermixing layer, positioned between the peg and the overlying structure, the at least one intermixing layer positioned on at least one of the five surfaces of the peg, the intermixing layer including at least the first material and a second material.

    Abstract translation: 包括近场换能器(NFT)的装置,所述NFT包括具有五个表面的钉,所述钉包括第一材料,所述第一材料包括金(Au),银(Ag),铝(Al),铜(Cu) ,钌(Ru),铑(Rh),铱(Ir)或其组合; 上层结构; 以及位于所述栓钉和所述上覆结构之间的至少一个混合层,所述至少一个混合层定位在所述栓钉的五个表面中的至少一个上,所述混合层至少包括所述第一材料和第二材料。

    Devices including a gas barrier layer

    公开(公告)号:US09165576B2

    公开(公告)日:2015-10-20

    申请号:US14711992

    申请日:2015-05-14

    Abstract: Devices that include a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer includes tantalum oxide (TaO), titanium oxide (TiO), chromium oxide (CrO), silicon oxide (SiO), aluminum oxide (AlO), titanium oxide (TiO), zirconium oxide (ZrO), yttrium oxide (YO), magnesium oxide (MgO), beryllium oxide (BeO), niobium oxide (NbO), hafnium oxide (HfO), vanadium oxide (VO), strontium oxide (SrO), or combinations thereof; silicon nitride (SiN), aluminum nitride (Al), boron nitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), niobioum nitride (NbN), hafnium nitride (HfN), chromium nitride (CrN), or combinations thereof silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), niobioum carbide (NbC), chromium carbide (CrC), vanadium carbide (VC), boron carbide (BC), or combinations thereof or combinations thereof.

    PEG HEIGHT OF NEAR-FIELD TRANSDUCERS
    96.
    发明申请

    公开(公告)号:US20150187378A1

    公开(公告)日:2015-07-02

    申请号:US14624066

    申请日:2015-02-17

    Abstract: A method is provided for characterizing the peg region of a near-field transducer incorporated into a write head of a HAMR magnetic recorder. The method includes providing excitation radiation to one or more near-field transducers. The near-field transducers include an enlarged disk region and a peg region at least partially in contact with the enlarged disk region. The method further includes filtering output radiation from the near-field transducers by passing a portion of photoluminescent radiation emitted by the near-field transducers in response to the excitation radiation and substantially blocking the excitation radiation transmitted by the near-field transducers. The method also includes detecting the portion of photoluminescent radiation and characterizing the peg region of at least one of the plurality of near-field transducers.

    DEVICES INCLUDING A GAS BARRIER LAYER
    99.
    发明申请
    DEVICES INCLUDING A GAS BARRIER LAYER 有权
    包括气体障碍层的装置

    公开(公告)号:US20140376350A1

    公开(公告)日:2014-12-25

    申请号:US14313611

    申请日:2014-06-24

    Abstract: Devices that include a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer includes tantalum oxide (TaO), titanium oxide (TiO), chromium oxide (CrO), silicon oxide (SiO), aluminum oxide (AlO), titanium oxide (TiO), zirconium oxide (ZrO), yttrium oxide (YO), magnesium oxide (MgO), beryllium oxide (BeO), niobium oxide (NbO), hafnium oxide (HfO), vanadium oxide (VO), strontium oxide (SrO), or combinations thereof; silicon nitride (SiN), aluminum nitride (Al), boron nitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), niobioum nitride (NbN), hafnium nitride (HfN), chromium nitride (CrN), or combinations thereof silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), niobioum carbide (NbC), chromium carbide (CrC), vanadium carbide (VC), boron carbide (BC), or combinations thereof or combinations thereof.

    Abstract translation: 包括近场传感器(NFT)的设备; 位于所述NFT的至少一部分上的阻气层; 以及位于所述阻气层的至少一部分上的耐磨层,其中所述阻气层包括氧化钽(TaO),氧化钛(TiO),氧化铬(CrO),氧化硅(SiO),氧化铝(AlO ),氧化钛(TiO),氧化锆(ZrO),氧化钇(YO),氧化镁(MgO),氧化铍(BeO),氧化铌(NbO),氧化铪(HfO),氧化钒(VO) 氧化锶(SrO)或其组合; 氮化硅(SiN),氮化铝(Al),氮化硼(BN),氮化钛(TiN),氮化锆(ZrN),氮化硼(NbN),氮化铪(HfN),氮化铬(CrN) 碳化硅(SiC),碳化钛(TiC),碳化锆(ZrC),碳化铌(NbC),碳化铬(CrC),碳化钒(VC),碳化硼(BC)或其组合或其组合。

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