Magnetic random access memory having magnetoresistive element
    93.
    发明授权
    Magnetic random access memory having magnetoresistive element 失效
    具有磁阻元件的磁性随机存取存储器

    公开(公告)号:US07084447B2

    公开(公告)日:2006-08-01

    申请号:US11007210

    申请日:2004-12-09

    IPC分类号: H01L29/72

    摘要: A magnetic random access memory includes a magnetoresistive element which has a recording layer, a fixed layer, and an intermediate nonmagnetic layer, the recording layer comprising a first ferromagnetic layer formed on the intermediate nonmagnetic layer, a first nonmagnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer formed on the first nonmagnetic layer and magnetically coupled with the first ferromagnetic layer by first magnetic coupling, a second nonmagnetic layer formed on the second ferromagnetic layer, and a third ferromagnetic layer formed on the second nonmagnetic layer and magnetically coupled with the second ferromagnetic layer by second magnetic coupling, wherein one of a state in which the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, and a state in which the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling is obtained.

    摘要翻译: 磁性随机存取存储器包括具有记录层,固定层和中间非磁性层的磁阻元件,所述记录层包括形成在中间非磁性层上的第一铁磁层,形成在第一铁磁层上的第一非磁性层 形成在第一非磁性层上并通过第一磁耦合与第一铁磁层磁耦合的第二铁磁层,形成在第二铁磁层上的第二非磁性层和形成在第二非磁性层上的第三铁磁层,并与 所述第二铁磁层通过第二磁耦合,其中所述第一磁耦合是反铁磁耦合的状态和所述第二磁耦合的状态是铁磁耦合,以及所述第一磁耦合是铁磁耦合的状态和所述第二磁耦合 耦合是反铁磁耦合 获得。