-
91.发明授权公开(公告)号：US07910283B2
公开(公告)日：2011-03-22
申请号：US11595941
申请日：2006-11-13
CPC分类号： C08G77/48 , C09D183/14 , G03F7/091
摘要： A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.
摘要翻译： 用于形成抗光反射涂层的组合物，其用于使用高达200nm的曝光的光刻工艺，包括通过具有下式的含硅 - 硅键的硅烷化合物水解缩合获得的含硅聚合物：R（6-m） Si2Xm，其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高的蚀刻选择性，使得 可以高精度地处理基板。
-
92.发明授权公开(公告)号：US07875417B2
公开(公告)日：2011-01-25
申请号：US12163350
申请日：2008-06-27
申请人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
发明人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
CPC分类号： C08L83/04 , C09D183/04 , G03F7/0752 , G03F7/11
摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (A-2) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of a base catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.
摘要翻译： 由含有（A-1）通过水解性硅化合物在酸催化剂的存在下水解缩合获得的含硅化合物（A-2）含硅化合物（A-2）的热固性组合物形成含硅膜， （B）Li，Na，K，Rb或Ce的氢氧化物或有机酸盐或锍，碘鎓盐或铵化合物的存在下，通过水解性硅化合物的水解缩合获得，（C） 有机酸，（D）环醚取代的醇，和（E）有机溶剂。 含硅膜确保有效的图案形成，光致抗蚀剂图案的有效转印以及基板的精确加工。
-
93.发明授权Substrate comprising a lower silicone resin film and an upper silicone resin film 有权底物包含下部有机硅树脂膜和上部有机硅树脂膜公开(公告)号：US07868407B2
公开(公告)日：2011-01-11
申请号：US11598749
申请日：2006-11-14
申请人： Tsutomu Ogihara , Takafumi Ueda
发明人： Tsutomu Ogihara , Takafumi Ueda
IPC分类号： H01L33/44
CPC分类号： G03F7/091 , G03F7/0752
摘要： There is disclosed a substrate comprising at least an organic film, an antireflection silicone resin film over the organic film, and a photoresist film over the antireflection silicone resin film, wherein the antireflection silicone resin film includes a lower silicone resin film and an upper silicone resin film which has lower silicon content than the lower silicone resin film. There can be provided a substrate comprising at least an organic film, an antireflection silicone resin film over the organic film, and a photoresist film over the antireflection silicone resin film, in which the antireflection silicone resin film has both excellent resist compatibility and high etching resistance at the time of etching the organic film, whereby a pattern can be formed with higher precision.
摘要翻译： 公开了在有机膜上至少含有有机膜，防反射硅树脂膜和防反射硅树脂膜上的光致抗蚀剂膜的基板，其中，防反射硅树脂膜包括下部有机硅树脂膜和上部有机硅树脂 具有比下部有机硅树脂膜低的硅含量的膜。 可以提供一种在有机膜上至少含有有机膜，防反射硅酮树脂膜和防反射硅树脂膜上的光致抗蚀剂膜的基材，其中抗反射硅树脂膜具有优异的抗蚀剂相容性和高抗蚀性 在蚀刻有机膜时，可以以更高的精度形成图案。
-
94.发明授权公开(公告)号：US07678529B2
公开(公告)日：2010-03-16
申请号：US11594176
申请日：2006-11-08
CPC分类号： G03F7/0752 , G03F7/0757 , G03F7/094 , G03F7/11 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.
摘要翻译： 多层抗蚀剂工艺包括在可图案化衬底上依次形成底涂层，中间膜和光致抗蚀剂膜，并且在多个阶段中进行蚀刻。 含硅的成膜组合物可用于形成用作蚀刻掩模的中间膜，其包含通过至少一种含Si-Si键的硅烷化合物的水解缩合而得到的含硅聚合物，其具有下式：R（6-m ）Si 2 X m其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高蚀刻选择性。
-
95.发明申请公开(公告)号：US20090011372A1
公开(公告)日：2009-01-08
申请号：US12163795
申请日：2008-06-27
申请人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
发明人： Tsutomu Ogihara , Toshiharu Yano , Koji Hasegawa
CPC分类号： C08L83/04 , C09D183/04 , G03F7/091
摘要： A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.
摘要翻译： 由含有（A）通过水解性硅化合物在酸性催化剂的存在下水解缩合得到的含硅化合物，（B）Li的氢氧化物或有机酸盐的热固性组合物形成含硅膜， Na，K，Rb或Ce，或锍，碘鎓或铵化合物，（C）有机酸，（D）环醚取代醇和（E）有机溶剂。 含硅膜确保有效的图案形成，光致抗蚀剂图案的有效转印以及基板的精确加工。
-
公开(公告)号：US20080220381A1
公开(公告)日：2008-09-11
申请号：US12071804
申请日：2008-02-26
CPC分类号： G03F7/091
摘要： An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided.The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种防反射膜组合物，其中蚀刻速度快，因此，当用作抗蚀剂下层时，抗蚀剂图案的膜损失和蚀刻期间图案的变形可以最小化，并且由于交联密度高，致密的 可以在热交联后形成膜，因此可以防止与上层抗蚀剂的混合，显影后的抗蚀剂图案良好。 该防反射膜组合物包含： 至少一种具有由以下通式（1）表示的重复单元的聚合物。
-
97.发明授权Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device 有权多孔膜形成组合物，组合物的制备方法，多孔膜和半导体器件公开(公告)号：US07402621B2
公开(公告)日：2008-07-22
申请号：US11041780
申请日：2005-01-24
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
IPC分类号： C08G77/06
CPC分类号： H01L21/02126 , C08G77/06 , C08G77/08 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.
摘要翻译： 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并加入交联性抑制剂以暂时终止交联性; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。
-
98.发明授权Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件公开(公告)号：US07309722B2
公开(公告)日：2007-12-18
申请号：US10703374
申请日：2003-11-07
IPC分类号： C09D183/04 , C08K3/22
CPC分类号： H01L23/5222 , C08K3/34 , C08L83/02 , C09D183/04 , H01L23/53228 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/249953 , Y10T428/31663 , H01L2924/00
摘要： The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4−n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.
摘要翻译： 本发明提供一种成膜用组合物，其可以形成介电性，粘合性，膜稠度和机械强度优异且容易变薄的多孔膜; 多孔膜及其形成方法，以及内部含有多孔膜的高性能和高可靠性的半导体器件。 更具体地，用于形成多孔膜的组合物包括含有无定形聚合物的溶液，其通过水解和缩合由通式（R 1）2表示的至少一种硅烷化合物而获得， （OR 2）4-n N，以及通过使用氢氧化季铵形成的沸石溶胶。 形成多孔膜的方法包括用于涂覆用于形成多孔膜的组合物的涂布步骤; 随后的干燥步骤; 和多孔性形成步骤。
-
公开(公告)号：US20070172759A1
公开(公告)日：2007-07-26
申请号：US11653839
申请日：2007-01-17
IPC分类号： G03F7/26
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/0757
摘要： There is disclosed an antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200 degrees C. or less; and an organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.
摘要翻译： 公开了用于光刻的抗反射膜组合物，其至少包含质均分子量为30,000以下的光吸收性有机硅树脂，其中分子量小于600的组分占全部树脂的5％以下; 在200℃以下的温度下分解的第一酸产生剂; 和有机溶剂。 可以提供防反射膜组合物，其防止在抗反射膜/光致抗蚀剂膜界面附近的混合，其在具有几乎垂直的壁轮廓的抗反射膜上提供抗蚀剂图案，并且对抗反射的下层提供较小的损伤 电影。
-
公开(公告)号：US20070111134A1
公开(公告)日：2007-05-17
申请号：US11544552
申请日：2006-10-10
申请人： Tsutomu Ogihara , Takafumi Ueda
发明人： Tsutomu Ogihara , Takafumi Ueda
IPC分类号： G03C11/12
摘要： There is disclosed a rework process for a photoresist film over a substrate having at least an antireflection silicone resin film and the photoresist film over the silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the silicone resin film unremoved; and forming a photoresist film again over the silicone resin film. In this case, the substrate over which the photoresist film is reworked can have an organic film under the silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost.
摘要翻译： 公开了一种在具有至少抗反射硅酮树脂膜和硅氧烷树脂膜上的光致抗蚀剂膜的基板上的光致抗蚀剂膜的返工工艺，其包括：至少除去光致抗蚀剂膜，同时留下硅树脂膜不被除去; 并在硅树脂膜上再次形成光致抗蚀剂膜。 在这种情况下，光致抗蚀剂膜被重新加工的基板可以在有机硅树脂膜下面具有有机膜。 可以提供可以以更低成本更容易地进行的光致抗蚀剂膜的返工工艺。
-
-
-
-
-
-
-
-
-
搜索结果
125 条记录 (耗时 0.053 秒)
