公开(公告)号：US08879915B2

公开(公告)日：2014-11-04

申请号：US13137501

申请日：2011-08-22

申请人： Takeshi Sakamoto ,  Kazuo Takatsu

发明人： Takeshi Sakamoto ,  Kazuo Takatsu

IPC分类号： H04J14/02

CPC分类号： H04J14/0204 ,  H04J14/0205 ,  H04J14/0209 ,  H04J14/021 ,  H04J14/0212 ,  H04J14/0213 ,  H04J14/0217 ,  H04J14/0219

摘要： An optical switching device includes plural wavelength selective switches that respectively have a first port and a plurality of second ports; and an optical coupler that has a plurality of third ports on an input-side or an output-side, respectively optically coupled to the first ports of the wavelength selective switches.

摘要翻译： 光开关装置包括分别具有第一端口和多个第二端口的多个波长选择开关; 以及光耦合器，其在输入侧或输出侧具有分别光耦合到波长选择开关的第一端口的多个第三端口。

公开(公告)号：US08828891B2

公开(公告)日：2014-09-09

申请号：US13575393

申请日：2011-01-05

申请人： Takeshi Sakamoto

发明人： Takeshi Sakamoto

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/324 ,  H01L21/477

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2103/50

摘要： For modulating laser light for forming a modified region SD3 at an intermediate position between a position closer to a rear face 21 and a position closer to a front face 3 with respect to an object 1, a quality pattern J having a first brightness region extending in a direction substantially orthogonal to a line 5 and second brightness regions located on both sides of the first brightness region in the extending direction of the line 5 is used. After forming modified regions SD1, SD2 at positions closer to the rear face 21 but before forming modified regions SD4, SD5 at positions closer to the rear face 21 while using the front face 3 as a laser light entrance surface, the modified region SD3 is formed at the intermediate position by irradiation with laser light modulated according to a modulation pattern including the quality pattern J.

摘要翻译： 为了调制在相对于物体1靠近背面21的位置与靠近前面3的位置之间的中间位置处形成改质区域SD3的激光，具有第一亮度区域延伸的质量图案J 使用与线5大致正交的方向，在线5的延伸方向上位于第一亮度区域的两侧的第二亮度区域。 在更靠近后表面21的位置处形成改质区域SD1，SD2之后，在使用前面3作为激光入射面的同时，在更靠近后面21的位置处形成改质区域SD4，SD5之前，形成改质区域SD3 在中间位置，通过用根据包括质量模式J的调制图案调制的激光进行照射。

公开(公告)号：US20140001679A1

公开(公告)日：2014-01-02

申请号：US13979178

申请日：2011-12-15

申请人： Junji Okuma ,  Takeshi Sakamoto

发明人： Junji Okuma ,  Takeshi Sakamoto

IPC分类号： B01J19/12

CPC分类号： H01L21/268 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0853 ,  B23K26/53 ,  B23K2101/18 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  C30B29/36 ,  C30B33/06 ,  H01L21/304 ,  H01L21/78 ,  H01L23/544 ,  H01L29/1608 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A planar object to be processed 1 comprising a hexagonal SiC substrate 12 having a front face 12a forming an angle corresponding to an off-angle with a c-plane is prepared. Subsequently, the object 1 is irradiated with pulse-oscillated laser light L along lines to cut 5a, 5m such that a pulse pitch becomes 10 μm to 18 μm while locating a converging point P of the laser light L within the SiC substrate 12. Thereby, modified regions 7a, 7m to become cutting start points are formed within the SiC substrate 12 along the lines 5a, 5m.

摘要翻译： 准备待处理的平面物体1，其包括具有形成与c面成偏角相对应的角度的正面12a的六边形SiC衬底12。 随后，将激光L的会聚点P定位在SiC衬底12内，同时沿着切割线5a，5m以脉冲振荡的激光L照射物体1，使得脉冲间距变为10μm至18μm。由此 沿着线5a，5m形成SiC基板12内的成为切断起点的改质区域7a，7m。

公开(公告)号：US08603351B2

公开(公告)日：2013-12-10

申请号：US12601090

申请日：2008-05-23

申请人： Takeshi Sakamoto ,  Hideki Shimoi ,  Naoki Uchiyama

发明人： Takeshi Sakamoto ,  Hideki Shimoi ,  Naoki Uchiyama

IPC分类号： B44C1/22

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/67132 ,  H01L21/78

摘要： An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region.

摘要翻译： 待切割的物体沿切割线可靠切割。 在将会聚点定位在物体的同时用激光照射待处理物体，以沿着切割线在物体中形成改质区域。 用改性区域形成的物体经受蚀刻处理，利用对修饰区域表现出比对于未改性区域更高的蚀刻速率的蚀刻液体，以蚀刻修饰区域。 这可以通过在改质区域中利用较高的蚀刻速率沿切割线选择性地和快速地蚀刻物体。

公开(公告)号：US20130302821A1

公开(公告)日：2013-11-14

申请号：US13885921

申请日：2011-11-17

申请人： Takeshi Sakamoto ,  Hiroko Hanzawa ,  Naomi Manri ,  Yuji Kuge

发明人： Takeshi Sakamoto ,  Hiroko Hanzawa ,  Naomi Manri ,  Yuji Kuge

IPC分类号： G01N33/68

CPC分类号： G01N33/6893 ,  A61B5/0071 ,  A61B5/02007 ,  A61B5/055 ,  A61B6/504 ,  A61B6/508 ,  A61B8/0891 ,  G01N2800/323 ,  G01N2800/52

摘要： The present invention provides a method and a means for evaluating atherosclerotic lesions by identifying a protein (marker protein) group, the expression level of which varies according to the progression of the atherosclerotic lesion, and using the proteins. Specifically, the present invention relates to a method for evaluating atherosclerotic lesions, comprising the steps of detecting a marker protein exhibiting an expression pattern (expression variation) characteristic at a specific disease stage of atherosclerotic lesions in a subject, and evaluating the atherosclerotic lesions in the subject based on the detection result.

摘要翻译： 本发明提供了一种通过鉴定其表达水平根据动脉粥样硬化病变的进展以及使用蛋白质而变化的蛋白质（标记蛋白）组来评价动脉粥样硬化病变的方法和手段。 具体而言，本发明涉及评价动脉粥样硬化病变的方法，其特征在于，包括以下步骤：检测在受试者的动脉粥样硬化病变的特定疾病阶段具有特征的表达模式（表达变异）的标记蛋白，并评价动脉粥样硬化病变 主体根据检测结果。

公开(公告)号：US08500310B2

公开(公告)日：2013-08-06

申请号：US12405286

申请日：2009-03-17

申请人： Takeshi Sakamoto

发明人： Takeshi Sakamoto

IPC分类号： F21V17/02

CPC分类号： G09F7/00 ,  H05K5/0017

摘要： Disclosed herein is an indication plate including: a plate member including a light-transmitting material; and an indication part provided at a surface on one side with respect to the thickness direction of the plate member, wherein the indication part includes a light-shielding part including a light-shielding material and covering the surface on one side, and a convex portion including the light-transmitting material, the convex portion projecting from the surface on one side and being exposed from the light-shielding part; the convex portion has a circumferential surface projecting from the light-shielding part, and an end face connecting tip portions of the circumferential surface to each other, and a metallic foil having a light-transmitting property is attached to the end face.

摘要翻译： 本文公开了一种指示板，包括：板构件，其包括透光材料; 以及指示部，其设置在相对于所述板构件的厚度方向的一侧的表面上，其中所述指示部包括：遮光部，所述遮光部包括遮光材料，并且覆盖所述表面的一侧;以及凸部 包括透光材料，从一侧的表面突出并从遮光部露出的凸部; 所述凸部具有从所述遮光部突出的周面以及将所述周面的前端部彼此连接的端面，并且具有透光性的金属箔附着到所述端面。

公开(公告)号：US20120329247A1

公开(公告)日：2012-12-27

申请号：US13575393

申请日：2011-01-05

申请人： Takeshi Sakamoto

发明人： Takeshi Sakamoto

IPC分类号： H01L21/78

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2103/50

摘要： For modulating laser light for forming a modified region SD3 at an intermediate position between a position closer to a rear face 21 and a position closer to a front face 3 with respect to an object 1, a quality pattern J having a first brightness region extending in a direction substantially orthogonal to a line 5 and second brightness regions located on both sides of the first brightness region in the extending direction of the line 5 is used. After forming modified regions SD1, SD2 at positions closer to the rear face 21 but before forming modified regions SD4, SD5 at positions closer to the rear face 21 while using the front face 3 as a laser light entrance surface, the modified region SD3 is formed at the intermediate position by irradiation with laser light modulated according to a modulation pattern including the quality pattern J.

摘要翻译： 为了调制在相对于物体1靠近背面21的位置与靠近前面3的位置之间的中间位置处形成改质区域SD3的激光，具有第一亮度区域延伸的质量图案J 使用与线5大致正交的方向，在线5的延伸方向上位于第一亮度区域的两侧的第二亮度区域。 在更靠近后表面21的位置处形成改质区域SD1，SD2之后，在使用前面3作为激光入射面的同时，在更靠近后面21的位置处形成改质区域SD4，SD5之前，形成改质区域SD3 在中间位置，通过用根据包括质量模式J的调制图案调制的激光进行照射。

公开(公告)号：US08338271B2

公开(公告)日：2012-12-25

申请号：US13235936

申请日：2011-09-19

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03B33/0222

摘要： An object to be processed can be cut highly accurately along a line to cut.An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved along a line to cut 5, so as to form modified regions M1, M2 positioned within the object 1 along the line to cut 5, and then a modified region M3 positioned between the modified regions M1, M2 within the object 1.

摘要翻译： 可以沿着切割线高精度地切割待处理的物体。 在将硅晶片11内的会聚点定位的同时用激光照射被处理体1，并且会聚点沿切割线5相对移动，以形成位于物体1内的改质区域M1，M2 沿着切割线5，然后是位于对象1内的修改区域M1，M2之间的修改区域M3。

公开(公告)号：US20120237211A1

公开(公告)日：2012-09-20

申请号：US13411794

申请日：2012-03-05

申请人： Hiroshi IIZUKA ,  Takeshi Sakamoto

发明人： Hiroshi IIZUKA ,  Takeshi Sakamoto

IPC分类号： H04B10/08 ,  H04B10/06

CPC分类号： H04B10/611 ,  H04B10/61 ,  H04B10/6164

摘要： There is provided an optical receiving apparatus, including a receiver configured to perform coherent reception by mixing first light of a received optical signal and second light generated by a local oscillator, a monitor configured to monitor a first frequency of the first light, and a controller configured to control a second frequency of the second light, based on a difference between the first frequency and the second frequency so as to reduce the difference.

摘要翻译： 提供了一种光接收装置，包括：接收机，被配置为通过混合接收的光信号的第一光和由本地振荡器产生的第二光来执行相干接收;监视器，被配置为监视第一光的第一频率;以及控制器 被配置为基于第一频率和第二频率之间的差来控制第二光的第二频率，以便减小差异。

公开(公告)号：US08247311B2

公开(公告)日：2012-08-21

申请号：US12063560

申请日：2006-08-04

申请人： Takeshi Sakamoto ,  Kenichi Muramatsu

发明人： Takeshi Sakamoto ,  Kenichi Muramatsu

IPC分类号： H01L21/00

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 μm to 525 μm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 μm to 525 μm, whereby particles are hard to occur.

摘要翻译： 提供了一种用于防止由切割硅晶片获得的切屑切割部分发生颗粒的激光加工方法。 使形成改质区域77〜712的激光L的照射条件与用于形成改质区域713〜719的激光L的照射条件不同，例如将激光L的球面像差校正为 硅晶片11的正面3为335μm〜525μm。 因此，即使将硅晶片11和功能元件层16从作为切割起点的改质区域71〜719切割成半导体芯片，在深度为335μm〜525μm的区域中也不会显着出现扭曲 ，由此难以发生颗粒。