摘要:
According to the invention, mounting area is decreased and yield is improved by decreasing the number of elements, and a memory with less burden on peripheral circuitry and a driving method thereof are provided. The invention comprises a memory cell including a memory element in a region where a bit line and a word line cross with an insulator interposed between them, a column decoder, and a selector including a clocked inverter. An input node of the clocked inverter is connected to the bit line while an output node is connected to a data line. Among a plurality of transistors connected in series which form the clocked inverter, a gate of a P-type transistor of which source or drain is connected to a power source on the high potential side VDD and a gate of an N-type transistor of which source or drain is connected to a power source on the low potential side VSS are connected to the column decoder.
摘要:
A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.
摘要:
A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT )152), and a larger load driving capability is obtained.
摘要:
A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs 101 and 104 to turn ON the TFTs and a potential of a node α is raised. When the potential of the node α reaches (VDD−VthN), the node α becomes in a floating state. Accordingly, a TFT 105 is turned ON and a potential of an output node is raised as a clock signal becomes High level. On the other hand, a potential of a gate electrode of the TFT 105 is further raised due to an operation of a capacitance means 107 as the potential of the output node is raised, so that the potential of the gate electrode of the TFT 105 becomes higher than (VDD+VthN). Thus, the potential of the output node is raised to VDD without causing a voltage drop due to a threshold voltage of the TFT 105. An output at the subsequent stage is then inputted to a TFT 103 to turn the TFT 103 ON, while the potential of the node α of TFTs 102 and 106 is dropped to turn the TFT 105 OFF. As a result, the potential of the output node becomes Low level.
摘要:
When a potential of a power supply line varies according to a flowing current, the gate-source voltage Vgs of a transistor also varies, leading to variations in the constant current between each source follower. In order to solve this problem, a potential Vb of the gate terminal of a transistor as a constant current source is changed in the same manner as a power supply line Vss which is connected to the source terminal of the transistor. Therefore, variations in the constant current are suppressed and variations in the output of the source followers are thus suppressed. In addition, by connecting the circuit having source followers to the output side of a signal line driver circuit, it can be prevented that luminance unevenness of a striped pattern is recognized in a display portion of a semiconductor device.
摘要:
In a serial-to-parallel conversion (SPC) circuit for digital data which converts the digital data serially inputted, into parallel digital data, and which outputs the parallel digital data; clock signals at frequencies which are, at the highest, ½ of the frequency of the input digital data are employed for operating the SPC circuit, whereby the SPC circuit is improved in power dissipation, stability and reliability.
摘要:
To provide a display device capable of displaying a good quality image. According to the present invention, there is provided a display device comprising: a display panel composed of a pixel portion in which a plurality of TFTs are arranged in matrix, a source driver, and a gate driver; an image signal processing circuit for processing an image signal input from an external; and a control circuit for controlling the display panel and the image signal processing circuit, characterized in that the image signal processing circuit corrects the image signal on the basis of a correction table and feeds the display panel with the corrected image signal.
摘要:
A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.
摘要:
According to the invention, mounting area is decreased and yield is improved by decreasing the number of elements, and a memory with less burden on peripheral circuitry and a driving method thereof are provided. The invention comprises a memory cell including a memory element in a region where a bit line and a word line cross with an insulator interposed between them, a column decoder, and a selector including a clocked inverter. An input node of the clocked inverter is connected to the bit line while an output node is connected to a data line. Among a plurality of transistors connected in series which form the clocked inverter, a gate of a P-type transistor of which source or drain is connected to a power source on the high potential side VDD and a gate of an N-type transistor of which source or drain is connected to a power source on the low potential side VSS are connected to the column decoder.
摘要:
A digital driver for display devices which can prevent the delay of digital data and the extended transition time of the digital data, and thus can make good display, and a display device including the above-mentioned digital driver are disclosed. The digital driver according to the present invention is constituted in such a manner that, by successively inputting digital data to a shift register, the digital data are shifted in the shift register, and the resulting output is sent out to latch circuits. Since the digital data are directly inputted to the shift register, the distance over which the data lines are laid around can be shortened, the increase in load due to the laying-around of the data lines which has so far been a problem can be prevented, and the delay of the digital data and the extended transition time of the digital data can be prevented.