摘要:
A semiconductor module having a semiconductor chip stack and a method for producing the same is disclosed. In one embodiment, a thermally conductive layer with anisotropically thermally conductive particles is arranged between the semiconductor chips. The anisotropically thermally conductive particles have a lower thermal conductivity in a direction vertically with respect to the layer or the film than in a direction of the layer or the film.
摘要:
A blank and a semiconductor device include a composite panel with semiconductor chips embedded in a plastic package molding compound. The blank includes a composite panel with semiconductor chips arranged in rows and columns in a plastic package molding compound with active upper sides of the semiconductor chips forming a coplanar surface area with the upper side of the composite panel. The blank further includes an orientation indicator impressed into the plastic package molding compound when the semiconductor chips are embedded within the molding compound.
摘要:
A blank and a semiconductor device are include a composite panel with semiconductor chips embedded in a plastic package molding compound. The blank includes a composite panel with semiconductor chips arranged in rows and columns in a plastic package molding compound with active upper sides of the semiconductor chips forming a coplanar surface area with the upper side of the composite panel. The blank further includes an orientation indicator impressed into the plastic package molding compound when the semiconductor chips are embedded within the molding compound.
摘要:
An apparatus and method for producing an article by molding is disclosed. In one embodiment, the method includes a mold with an upper part, a lower part and at least one mold cavity, and has a vacuum clamping ring with a least one closable vent, which is arranged between the upper part and the lower part. The mold cavity is at least partially filled with a mold material. The vent is closed, and the mold cavity is filled with a thermoplastic or thermoset material.
摘要:
A semiconductor module having a semiconductor chip stack and a method for producing the same is disclosed. In one embodiment, a thermally conductive layer with anisotropically thermally conductive particles is arranged between the semiconductor chips. The anisotropically thermally conductive particles have a lower thermal conductivity in a direction vertically with respect to the layer or the film than in a direction of the layer or the film.
摘要:
A method and apparatus for encapsulating items such as electronic devices. A mold material is dispensed onto the electronic device and the device is situated between first and second molds. One mold is moved towards the other so as to vary the size of a cavity defined by the first and second molds. A vacuum is applied to the cavity and the vacuum is varied in response to the size of the cavity. The vacuum can be varied in response to a predetermined vacuum profile. For example, in certain embodiments the vacuum is varied in response to the position of the first mold relative to the second mold, wherein the vacuum is increased as the cavity height is reduced.
摘要:
A semiconductor device and method is disclosed. In one embodiment, the method includes placing a first semiconductor over an electrically conductive carrier. The first semiconductor is covered with a molding compound. A through hole is formed in the molding compound. A first material is deposited in the through hole.
摘要:
Thin integrated semiconductor devices are produced by being embedded in a molding compound matrix in such a way that a composite is formed. The semiconductor devices are first embedded in the matrix and then thinned after being embedded. The thin integrated semiconductor devices are singulated by forming separating cuts into the molding compound matrix between adjacent devices.
摘要:
A method and apparatus for encapsulating items such as electronic devices. A mold material is dispensed onto the electronic device and the device is situated between first and second molds. One mold is moved towards the other so as to vary the size of a cavity defined by the first and second molds. A vacuum is applied to the cavity and the vacuum is varied in response to the size of the cavity. The vacuum can be varied in response to a predetermined vacuum profile. For example, in certain embodiments the vacuum is varied in response to the position of the first mold relative to the second mold, wherein the vacuum is increased as the cavity height is reduced.
摘要:
A semiconductor stack block contains either stacked semiconductor chip size semiconductor devices or semiconductor devices with semiconductor chips in a plastic housing composition, the semiconductor chips and the plastic housing composition having a coplanar area. Arranged on the active top side of the semiconductor chips and the plastic housing composition is an areal wiring structure, by which device interconnects are led to an individual edge of the semiconductor devices. The edges with the ends of the device interconnects form the underside of the semiconductor stack block, external contact areas being arranged on the ends of the device interconnects, the external contact areas carrying external contacts.