摘要:
A semiconductor phase-change memory device comprises a data line disposed on a semiconductor substrate and a data storage structure disposed under the data line and having a concave portion extending in a direction along the data line. A data contact structure is configured to contact the data storage structure, and having a lower portion filling the concave portion of the data storage structure and an upper portion surrounding at least a lower portion of the data line. Each of sidewalls of the data storage structure is disposed at substantially the same plane as a corresponding one of sidewalls of the upper portion of the data contact structure.
摘要:
A backlight unit for a display device includes a light guide plate; a reflective sheet under the light guide plate; a lamp at least one side of the light guide plate and providing a light into the light guide plate; and an optical sheet disposed on the light guide plate and including a first lenticular sheet, the first lenticular sheet including a base film for diffusing the light through the light guide plate, a first lenticular lens disposed on a front surface of the base film and having a half-cylinder shape and a first printing pattern on at least one edge of a rear surface of the base film.
摘要:
In an embodiment, a memory device, with a highly integrated cell structure, includes a mold insulating layer disposed on a semiconductor substrate. At least one conductive line is disposed on the mold insulating layer. Data storage elements self-aligned with the conductive line are interposed between the conductive line and the mold insulating layer. In this case, each of the data storage elements may include a resistor pattern and a barrier pattern, which are sequentially stacked, and the resistor pattern may be self-aligned with the barrier pattern.
摘要:
A method for producing a film of vanadium pentoxide nanowires having improved alignment is provided. The method comprises the steps of a) preparing a solution of vanadium pentoxide (V2O5) nanowires by a sol-gel method; b) diluting the solution of vanadium pentoxide nanowires with water and feeding the dilute aqueous solution into a Langmuir-Blodgett trough; c) adding a dispersant to the dilute aqueous solution of vanadium pentoxide nanowires; d) diluting a solution of a dioctadecyldimethylammonium halide with an organic solvent, applying the dioctadecyldimethylammonium halide solution to the surface of the dilute aqueous solution of vanadium pentoxide nanowires in the Langmuir-Blodgett trough, and allowing the solutions to stand to disperse the dioctadecyldimethylammonium halide solution in the Langmuir-Blodgett trough; e) controlling the surface pressure of the dioctadecyldimethylammonium halide solution using barriers mounted on the Langmuir-Blodgett trough; f) affixing a substrate to a dipping arm of the Langmuir-Blodgett trough and bringing the substrate into contact with the surface of the dioctadecyldimethylammonium halide solution; and g) separating the substrate from the dipping arm. According to the method, the alignment of the nanowires can be markedly improved by sol-gel synthesis, the need for subsequent washing can be eliminated, which contributes to the simplification of the production process, and the nanowires can be cut to desired lengths in a simple manner, thereby ensuring the reproducibility of a device using the nanowire film and achieving improved characteristics of the device. Further provided are a vanadium pentoxide nanowire film produced by the method and a nanowire device comprising the nanowire film. The nanowire device can find application in various fields, including field effect transistors and a variety of sensors, due to its excellent characteristics and reproducibility.
摘要:
A light concentrating sheet for a liquid crystal display module includes a first base film having flat inner and outer surfaces; a first light concentrating film on the first base film and having a first thermal expansion coefficient; a second light concentrating film on the first light concentrating film and having a second thermal expansion coefficient; and a second base film on the second light concentrating film and having flat inner and outer surfaces.
摘要:
Since the K-ras oligonucleotide microarray of the present invention can detect K-ras mutations by applying a competitive DNA hybridization method to the oligonucleotides spotted on a solid matrix different from the previously reported method for detecting a mutation, it makes the more precise analysis and can reduce experimental cost and time. Accordingly, the K-ras oligonucleotide microarray of the present invention can be used in studies to detect K-ras mutations and unravel the signal transduction mechanism and tumorigenesis related to K-ras gene. Further, since the microarray of the present invention can be applied to other genes having mutational hot spot regions such as K-ras, it has wide applicable range.
摘要:
Provided are a nonvolatile memory device and a method for manufacturing the same. The nonvolatile memory device may include a semiconductor substrate, a floating gate, a second insulation layer, a third insulation layer, a control gate, and a common source line. The semiconductor substrate may have an active region limited by a device isolation region. The floating gate may be formed on the active region with a first insulation layer between the floating gate and the active region. The second insulation layer covers one side of the floating gate, and the third insulation layer covers the floating gate and the second insulation layer. The control gate may be formed on the other side of the floating gate with a fourth insulation layer between the control gate and the floating gate. The common source line may be formed in a portion of the substrate that is located under the second insulation layer.
摘要:
There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.
摘要:
A terminal for automatically changing a communication mode, a wireless network system having the same, and a method thereof are disclosed. The terminal comprises a wireless communication module for communicating with a corresponding terminal through an access point connected to a communication infrastructure. The terminal further comprising a first memory for storing Ad-Hoc information previously established between the terminal and the corresponding terminal, and a controller for controlling the wireless communication module to communicate with the corresponding terminal based on an Ad-Hoc communication mode using the Ad-Hoc information stored in the first memory when the network access point has malfunctioned.
摘要:
Disclosed are an apparatus and a method for controlling music play in a mobile communication terminal. The apparatus includes a motion recognition sensor unit for detecting a motion of the mobile communication terminal and outputting detection signals, a sound source chip for outputting sound, and a controller for receiving the detection signals from the motion recognition sensor unit, calculating motion values of the mobile communication terminal, and controlling the sound source chip to output sounds dependent on the calculated motion values. The apparatus includes a user interface required for the music play, a display unit for displaying music to be played, a motion recognition sensor unit for detecting a motion of the mobile terminal, a sound file storage unit including an area for storing at least one music information, a controller for controlling corresponding music to be played according a motion of the mobile terminal, and a speaker for outputting sounds of the played music.