公开(公告)号：US06906069B1

公开(公告)日：2005-06-14

申请号：US09479315

申请日：2000-01-06

申请人： Leping Li ,  Julio C. Medina ,  Bei Shan

发明人： Leping Li ,  Julio C. Medina ,  Bei Shan

IPC分类号： A01N43/58 ,  A61K31/167 ,  A61K31/34 ,  A61K31/443

CPC分类号： A61K31/167 ,  A61K31/34 ,  A61K31/443 ,  Y02A50/411

摘要： The invention provides compounds, compositions and methods for modulating the effects of LXRα in a cell. The compounds and compositions are useful both as diagnostic indicators of LXRα function and as pharmacologically active agents. The compounds and compositions find particular use in the treatment of disease states associated with cholesterol metabolism, particularly atherosclerosis and hypercholesterolemia.

摘要翻译： 本发明提供用于调节细胞中LXRα的作用的化合物，组合物和方法。 化合物和组合物既可用作LXRα功能的诊断指标，也可用作药理活性剂。 化合物和组合物特别用于治疗与胆固醇代谢相关的疾病状态，特别是动脉粥样硬化和高胆固醇血症。

公开(公告)号：US06673923B2

公开(公告)日：2004-01-06

申请号：US09847962

申请日：2001-05-02

申请人： Leping Li ,  Xiaoqi Chen ,  Serena T. Cutler

发明人： Leping Li ,  Xiaoqi Chen ,  Serena T. Cutler

IPC分类号： C07D23112

CPC分类号： C07D231/12 ,  A61K31/415 ,  C07D231/20 ,  C07D403/10 ,  C07D409/04 ,  A61K31/00 ,  A61K2300/00

摘要： The present invention provides pyrazole and pyrazolone derivatives. Preferred compounds of the invention are useful as RNA polymerase inhibitors. Further preferred compounds of the invention are useful as antimicrobial agents.

摘要翻译： 本发明提供吡唑和吡唑啉酮衍生物。 本发明优选的化合物可用作RNA聚合酶抑制剂。 本发明的其它优选化合物可用作抗微生物剂。

公开(公告)号：US06419785B1

公开(公告)日：2002-07-16

申请号：US09678633

申请日：2000-10-03

申请人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  Cong Wei ,  Chienfan Yu

发明人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  Cong Wei ,  Chienfan Yu

IPC分类号： C23F102

CPC分类号： B24B37/30 ,  B24B37/013 ,  H01L21/31053

摘要： Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example, ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product as the target film is removed. The reaction product is extracted as a gas from the slurry and monitored using a threshold photoionization mass spectrometer.

摘要翻译： 通过用选择性地产生化学反应产物的方法（例如，用含有KOH的浆料中的氮化物膜研磨晶片的氨），通过用任一种方法选择性地生成化学反应产物的方法（例如，氨） 目标或停止膜，并且在去除靶膜时监测化学反应产物的水平。 反应产物从浆液中提取为气体，并使用阈值光电离质谱仪进行监测。

公开(公告)号：US06291351B1

公开(公告)日：2001-09-18

申请号：US09605729

申请日：2000-06-28

申请人： Leping Li ,  Steven George Barbee ,  Eric James Lee ,  Francisco A. Martin ,  Cong Wei

发明人： Leping Li ,  Steven George Barbee ,  Eric James Lee ,  Francisco A. Martin ,  Cong Wei

IPC分类号： H01L21302

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  G11B5/3116 ,  G11B5/3163

摘要： A method is described for fabricating a cloisonné structure, in which a top surface of a metal oxide layer is made coplanar with a top surface of a metallic structure formed on a substrate. A nitride layer is deposited on at least the top surface of the metallic structure, and the metal oxide layer is deposited over the metallic structure and the nitride layer. The metal oxide layer is then polished by a chemical-mechanical polishing (CMP) process using a slurry, to expose the nitride layer on the top surface of the metallic structure. Polishing of the nitride layer causes ammonia to be generated in the slurry. The ammonia is extracted as a gas from the slurry, and a signal is generated in accordance with the ammonia concentration. The CMP process is terminated in accordance with a change in the signal. In a preferred embodiment, the metal oxide is aluminum oxide, the nitride is aluminum nitride, and the nitride layer is deposited as a conformal layer on the substrate and the metallic structure.

摘要翻译： 描述了一种用于制造景泰蓝结构的方法，其中金属氧化物层的顶表面与形成在基底上的金属结构的顶表面共面。 氮化物层沉积在金属结构的至少顶表面上，金属氧化物层沉积在金属结构和氮化物层上。 然后通过使用浆料的化学机械抛光（CMP）工艺来抛光金属氧化物层，以暴露金属结构的顶表面上的氮化物层。 氮化物层的抛光在浆料中产生氨。 从浆液中提取氨作为气体，根据氨浓度产生信号。 CMP过程根据信号的变化而终止。 在优选的实施方案中，金属氧化物是氧化铝，氮化物是氮化铝，氮化物层作为保形层沉积在衬底和金属结构上。

公开(公告)号：US6126848A

公开(公告)日：2000-10-03

申请号：US073604

申请日：1998-05-06

申请人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  William Joseph Surovic ,  Cong Wei

发明人： Leping Li ,  James Albert Gilhooly ,  Clifford Owen Morgan, III ,  William Joseph Surovic ,  Cong Wei

IPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/76 ,  H01L21/306 ,  G01N21/00

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/766 ,  H01L21/30625 ,  Y10T436/175383

摘要： Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.

公开(公告)号：US6046171A

公开(公告)日：2000-04-04

申请号：US158459

申请日：1998-09-22

申请人： Yat Sun Or ,  George Griesgraber ,  Leping Li ,  Daniel T. Chu

发明人： Yat Sun Or ,  George Griesgraber ,  Leping Li ,  Daniel T. Chu

IPC分类号： C07H17/08 ,  A61K31/70 ,  C07H1/00

CPC分类号： C07H17/08

摘要： Novel 6,11-bridged erythromycin compounds and pharmaceutically acceptable salts and esters thereof having antibacterial activity having a formula ##STR1## compositions comprising a therapeutically effective amount of a compound of the invention in combination with a pharmaceutically acceptable carrier, a method for treating bacterial infections by administering to a mammal a pharmaceutical composition containing a therapeutically-effective amount of a compound of the invention, and processes for their preparation.

摘要翻译： 具有抗细菌活性的新型6,11-桥接的红霉素化合物及其药学上可接受的盐和酯，其组成包括治疗有效量的本发明化合物与药学上可接受的载体的组合，通过给予 哺乳动物含有治疗有效量的本发明化合物的药物组合物及其制备方法。

公开(公告)号：US5770948A

公开(公告)日：1998-06-23

申请号：US620723

申请日：1996-03-19

申请人： Leping Li ,  Steven George Barbee ,  Arnold Halperin ,  Richard Mars Ruggiero ,  William Joseph Surovie

发明人： Leping Li ,  Steven George Barbee ,  Arnold Halperin ,  Richard Mars Ruggiero ,  William Joseph Surovie

IPC分类号： B24B37/013 ,  B24B37/24 ,  B24B37/26 ,  G01B7/06 ,  H01L21/302

CPC分类号： B24B37/013 ,  B24B37/245 ,  B24B37/26 ,  B24B49/12 ,  G01B7/06

摘要： An apparatus for rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process by a polisher is provided with a sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process, a conductor coupled to the sensor for receiving the signal, the conductor fixed to the rotatable wafer carrier, a contact coupled to the conductor, the contact fixed to a stationary drive arm, and signal transfer means coupled to the contact for transferring the signal to a monitoring means.

摘要翻译： 用于通过抛光机原位监测化学机械抛光工艺的旋转信号耦合装置设置有固定到可旋转晶片载体的传感器，用于产生响应于化学机械抛光工艺的信号，耦合到传感器的导体 为了接收信号，固定到可旋转晶片载体的导体，耦合到导体的触点，固定到固定驱动臂的触点和耦合到触点的信号传送装置，用于将信号传送到监视装置。

公开(公告)号：US5660672A

公开(公告)日：1997-08-26

申请号：US419208

申请日：1995-04-10

申请人： Leping Li ,  Steven George Barbee ,  Arnold Halperin ,  Tony Frederick Heinz

发明人： Leping Li ,  Steven George Barbee ,  Arnold Halperin ,  Tony Frederick Heinz

IPC分类号： G01B7/00 ,  G01B7/06 ,  G01R31/26 ,  H01L21/302 ,  H01L21/3205 ,  H01L21/66

CPC分类号： G01B7/105

摘要： The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.

摘要翻译： 通过在膜中感应电流来原位监测半导体衬底等底层上的膜的厚度变化，随着膜的厚度变化（增加或减小），检测电流的变化 。 利用导电膜，通过与包括电容器和电感器的传感器产生交变电磁场，在膜中引起涡流。

公开(公告)号：US5582746A

公开(公告)日：1996-12-10

申请号：US269862

申请日：1994-06-30

申请人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

发明人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

IPC分类号： C23F1/00 ,  G01N17/00 ,  G01N27/02 ,  G01N29/34 ,  G01N29/42 ,  G03F7/30 ,  H01L21/306 ,  H01L21/66

CPC分类号： B24B37/013 ,  G01N29/348 ,  G01N29/42 ,  G03F7/3028 ,  H01L22/26 ,  G01N2291/0231 ,  G01N2291/2694 ,  H01L2924/0002

摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

公开(公告)号：US5573624A

公开(公告)日：1996-11-12

申请号：US269861

申请日：1994-06-30

申请人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

发明人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

IPC分类号： G01N17/00 ,  G01N27/02 ,  G01N29/34 ,  G01N29/42 ,  G03F7/30 ,  H01L21/66 ,  C23F1/02

CPC分类号： B24B37/013 ,  G01N29/348 ,  G01N29/42 ,  G03F7/3028 ,  H01L22/26 ,  G01N2291/0231 ,  G01N2291/2694 ,  H01L2924/0002

摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

摘要翻译： 公开了一种用于在湿式化学蚀刻剂浴中蚀刻至少一个晶片期间对化学蚀刻工艺进行实时原位监测的非接触式方法和装置。 该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小和最大值的时间以确定膜蚀刻均匀度值。 这种方法及其装置在湿化学蚀刻站中特别有用，并且可用于膜沉积工艺质量控制。