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公开(公告)号：US10943998B2
公开(公告)日：2021-03-09
申请号：US16829865
申请日：2020-03-25
发明人： Rongming Chu , Yu Cao
IPC分类号： H01L29/778 , H01L29/15 , H01L29/205 , H01L29/66 , H01L29/20 , H01L29/207 , H01L29/423
摘要： A III-nitride power handling device and the process of making the III-nitride power handling device are disclosed that use digital alloys as back barrier layer to mitigate the strain due to lattice mismatch between the channel layer and the back barrier layer and to provide increased channel conductivity. An embodiment discloses a GaN transistor using a superlattice binary digital alloy as back barrier comprising alternative layers of AlN and GaN. Other embodiments include using superlattice structures with layers of GaN and AlGaN as well as structures using AlGaN/AlGaN stackups that have different Aluminum concentrations. The disclosed device has substantially increased channel conductivity compared to traditional analog alloy back barrier devices.
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公开(公告)号：US10921360B2
公开(公告)日：2021-02-16
申请号：US16269847
申请日：2019-02-07
IPC分类号： G01R29/08 , H04B17/318 , H04B17/21
摘要： A RF field sensor in which a magnetostrictive film is deposited on one or more electrodes of one or more quartz resonator(s) in which an electric field of the RF field is detected along one axis of the RF field sensor and a magnetic field of the RF field is detected along an orthogonal axis of the RF field sensor simultaneously.
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公开(公告)号：US10916647B2
公开(公告)日：2021-02-09
申请号：US16264255
申请日：2019-01-31
发明人： Zijian “Ray” Li , Rongming Chu
IPC分类号： H01L29/778 , H01L29/40 , H01L29/78 , H01L29/66 , H01L29/417 , H01L21/02 , H01L29/201 , H01L29/205 , H01L29/423 , H01L29/47 , H01L29/20
摘要： A method of manufacturing a III-V semiconductor circuit; the method comprising: forming a first layer of a III-V material on a growth substrate; forming a second layer of a III-V material on the first layer of III-V material; forming a FET transistor having a source electrode and a drain electrode in contact with a top surface of the second layer of a III-V material; forming a top dielectric layer above the FET transistor; forming a metal layer above the top dielectric layer, wherein said metal layer is connected to said source electrode; attaching a handle substrate to a top surface of the metal layer; removing the growth substrate from the bottom of the first layer of a III-V material; and forming a bottom dielectric layer on the bottom of the first layer of a III-V material.
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公开(公告)号：US10914585B1
公开(公告)日：2021-02-09
申请号：US16871497
申请日：2020-05-11
发明人： Logan D. Sorenson , Raviv Perahia , David T. Chang , Randall L. Kubena , Deborah J. Kirby , Hung Nguyen , Richard J. Joyce
IPC分类号： G01C19/5726 , G01C19/5755
摘要： A sensor includes an acceleration or magnetic field sensitive microelectromechanical systems (MEMS) resonator, configured to oscillate in at least a first normal mode and a second normal mode. The sensor further includes: a coarse readout circuit configured to drive the first normal mode, measure a motion of the first normal mode, and derive from the measured motion a coarse measurement of the true acceleration or true external magnetic field; and a fine readout circuit configured to drive the second normal mode, measure a motion of the second normal mode, and derive from the measured motion and the coarse measurement a measurement of the difference between the true acceleration or true external magnetic field and the coarse measurement.
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公开(公告)号：US10910793B2
公开(公告)日：2021-02-02
申请号：US16659526
申请日：2019-10-21
发明人： Daniel Yap , Rongming Chu , Andrew Pan
摘要： A laser or light emitter for operation at a cryogenic temperature includes a single quantum well layer, an n-type barrier layer directly on a first surface of the single quantum well layer, and a p-type barrier layer directly on a second surface of the single quantum well layer opposite the first surface of the single quantum well layer. The single quantum well layer is between the p-type barrier layer and the n-type barrier layer and the compositions of the n-type barrier layer and the p-type barrier layer are graded.
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公开(公告)号：US20210023249A1
公开(公告)日：2021-01-28
申请号：US17036474
申请日：2020-09-29
发明人： Adam F. Gross , Kevin Geary , Shanying Cui
摘要： A self-sanitizing surface structure configured to selectively refract light, a method of fabricating a self-sanitizing surface configured to selectively refract light, and a method of decontaminating a surface using selectively refracted light. A waveguide including a support layer below a propagating layer is positioned over a substrate as a self-sanitizing layer. In the absence of a contaminant or residue on the waveguide, UV light injected into the propagating layer is constrained within the propagating layer due to total internal reflection. When a residue is present on the self-sanitizing surface structure, light may be selectively refracted at or near the interface with the residue along the side of the waveguide to destroy the residue. The self-sanitizing surface structure may be configured to refract a suitable amount of UV light in response to a particular type of residue or application.
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公开(公告)号：US10904291B1
公开(公告)日：2021-01-26
申请号：US15909998
申请日：2018-03-01
发明人： David Naumann , Andrey Chudnov , Aleksey Nogin , Pape Sylla
摘要： Described is a system for enforcing software policies. The system transforms an original software by inserting additional instructions into the original software. The additional instructions have the effect of determining, at run-time, whether proceeding with execution of the original software is in accordance with a predefined policy. Transforming the original software relies on software analysis to determine whether any run-time checks normally inserted into the original software can be safely omitted. The transformed software prevents unauthorized information from passing to the network.
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公开(公告)号：US10903333B2
公开(公告)日：2021-01-26
申请号：US15663584
申请日：2017-07-28
发明人： Yu Cao , Rongming Chu , Zijian Ray Li
IPC分类号： H01L29/51 , H01L29/20 , H01L29/778 , H01L29/78 , H01L29/417 , H01L29/43 , H01L29/06 , H01L21/28 , H01L29/423
摘要： A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.
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公开(公告)号：US10901054B1
公开(公告)日：2021-01-26
申请号：US16399649
申请日：2019-04-30
IPC分类号： G01R33/345 , G01R33/36 , G01R33/26
摘要： An atomic defect sensor for measuring a magnitude of a physical parameter comprises an optical waveguide comprising an atomic defect site located within the optical waveguide, the optical waveguide being configured to guide an optical signal toward the atomic defect site, a first doped fin integrated with the optical waveguide at a first side of the optical waveguide, and a second doped fin integrated with the optical waveguide at a second side of the optical waveguide, wherein the atomic defect site is configured to be energetically stimulated by the optical signal in the presence of an RF signal, and to generate a photocurrent corresponding to the magnitude of the physical parameter and a voltage differential between the first and second doped fins.
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公开(公告)号：US20210019840A1
公开(公告)日：2021-01-21
申请号：US16825347
申请日：2020-03-20
摘要： Described is a system for guiding opinions of users of a social media network. The system determines a number of control agents to be inserted into a population of users of the social media network. The system also determines a rate at which an expressed opinion of each control agent should change over a period of time. A control strategy is output which includes a control schedule based on the number of control agents to be inserted into the population of users and the rate at which the expressed opinion of each control agent should change over the period of time. Finally, the control schedule is deployed in the social media network.
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