公开(公告)号：US20100050788A1

公开(公告)日：2010-03-04

申请号：US12198663

申请日：2008-08-26

Applicant: Youngtack Shim

Inventor： Youngtack Shim

IPC: G01L1/22

CPC classification number: G01L1/205 ,  G01L1/005 ,  G01L1/044 ,  G01L1/20 ,  G01L1/24 ,  G01P15/0894 ,  G01P15/093 ,  G01P15/12

Abstract: Nanoscale measurement of force, torque, and acceleration are provided. In one embodiment, a measurement apparatus includes a first plurality of nanoparticles coupled to a first substrate separated from a second plurality of nanoparticles coupled to a second substrate by a pillar disposed between the first substrate and the second substrate.

Abstract translation: 提供力，扭矩和加速度的纳米尺度测量。 在一个实施例中，测量装置包括耦合到第一衬底的第一多个纳米颗粒，所述第一衬底通过设置在第一衬底和第二衬底之间的柱与第二衬底分离，第二衬底与第二衬底耦合。

公开(公告)号：US07587944B1

公开(公告)日：2009-09-15

申请号：US12220038

申请日：2008-07-21

Applicant: Greg Shaw ,  Troy Prince ,  Joseph Snyder ,  Mike Willett ,  Frederick Lisy

Inventor： Greg Shaw ,  Troy Prince ,  Joseph Snyder ,  Mike Willett ,  Frederick Lisy

IPC: G01L19/04

CPC classification number: F02C9/28 ,  F02D41/3005 ,  F23N5/022 ,  G01B5/30 ,  G01L1/005

Abstract: The present invention relates to a method of determining both pressures and temperatures in a high temperature environment. The present invention also relates to a method of determining temperatures about a pressure-sensing element using a bi-functional heater. In addition, the present invention preferably relates to a pressure sensor with the pressure-sensing element and a heating element both integrated into the sensor's packaging, preferably onto the diaphragm of the pressure sensor, and particularly to such a pressure sensor capable of operating at high or elevated temperatures, and even more particularly to such a pressure sensor wherein the heating element is capable of both heating, at least in part, the pressure-sensing element and monitoring the temperature of the application area. Preferably, the pressure-sensing element is formed from shape memory alloy (SMA) materials that can be used at high or elevated temperatures as a pressure sensor with high sensitivity.

Abstract translation: 本发明涉及在高温环境下测定压力和温度的方法。 本发明还涉及使用双功能加热器来确定关于压力感测元件的温度的方法。 此外，本发明优选地涉及具有压力感测元件和加热元件的压力传感器，两者都集成到传感器的包装中，优选地在压力传感器的隔膜上，特别是涉及能够在高压下操作的压力传感器 或升高的温度，并且甚至更具体地涉及这种压力传感器，其中加热元件能够至少部分地加热压力感测元件并监测施加区域的温度。 优选地，压力感测元件由形状记忆合金（SMA）材料形成，其可以在高或高温下用作具有高灵敏度的压力传感器。

公开(公告)号：US20090165569A1

公开(公告)日：2009-07-02

申请号：US12330396

申请日：2008-12-08

Applicant: Minoru Taya ,  Jin Wang ,  Chunye Xu ,  Yasuo Kuga

Inventor： Minoru Taya ,  Jin Wang ,  Chunye Xu ,  Yasuo Kuga

IPC: G01D7/00

CPC classification number: G01D5/14 ,  G01L1/005 ,  G01L5/228 ,  G06F3/0338 ,  Y10T29/49007

Abstract: An electroactive polymer is used to produce a tactile sensor. The electroactive polymer (EAP) includes a sheet of an ion-exchange membrane having opposite surfaces on which are plated gold electrodes. The EAP is formed to have a dome-shape with a plurality of sensing electrodes circumferentially disposed around an outer surface of the dome. A flexible polymer underlying the EAP supports it and prevents a force applied to the tactile sensor from inverting the dome. The sensor electrodes produce separate output signals indicative of different vector components of an applied force acting on the tactile sensor, so that a direction of the force can be determined. Vias provided in the electrodes are electrically coupled to a flexible circuit that conveys the output signals externally from the sensing electrodes for use and further processing. A plurality of the tactile sensors can be formed as an array on an ion-exchange membrane.

Abstract translation: 电活性聚合物用于产生触觉传感器。 电活性聚合物（EAP）包括具有相对表面的离子交换膜片，其上镀有金电极。 EAP形成为具有围绕圆顶的外表面周向设置的多个感测电极的圆顶形状。 EAP下面的柔性聚合物支撑它，并且防止施加到触觉传感器的力反转圆顶。 传感器电极产生指示作用在触觉传感器上的施加力的不同矢量分量的分离的输出信号，从而可以确定力的方向。 设置在电极中的通孔电耦合到柔性电路，其将来自感测电极的输出信号从外部传送以用于和进一步处理。 多个触觉传感器可以形成为离子交换膜上的阵列。

公开(公告)号：US20080047367A1

公开(公告)日：2008-02-28

申请号：US11696264

申请日：2007-04-04

Applicant: Jae-hyuk CHOI ,  Min-seok KIM ,  Yon-kyu PARK ,  Kwang-cheol LEE ,  Mahn-soo CHOI

Inventor： Jae-hyuk CHOI ,  Min-seok KIM ,  Yon-kyu PARK ,  Kwang-cheol LEE ,  Mahn-soo CHOI

IPC: G01R33/02 ,  G01L1/04

CPC classification number: G01R33/0358 ,  G01L1/005

Abstract: Disclosed herein are a force realization apparatus using a superconducting flux quantum, which is capable of generating force proportional to a flux quantum number by including a micron-sized superconducting annulus or superconducting quantum interference device in an ultra-sensitive cantilever, and a force measurer using the same. The quantum-based force realization apparatus includes: superconducting quantum trap means having a magnetic moment proportional to a flux quantum number; an ultra-sensitive cantilever which mounts therein the superconducting quantum trap means, has elasticity and is displaced by force generated by the superconducting quantum trap means located in a magnetic field gradient; and a magnetic field generator which applies a magnetic field to the superconducting quantum trap means.

Abstract translation: 本文公开了一种使用超导通量量子的力实现装置，其能够通过在超灵敏悬臂中包括微米级的超导环形或超导量子干涉装置而产生与通量量子数成比例的力，以及使用 一样。 量子力实现装置包括：具有与磁通量子数成正比的磁矩的超导量子阱装置; 其中安装有超导量子阱装置的超灵敏悬臂具有弹性并由位于磁场梯度的超导量子阱装置产生的力移位; 以及向超导量子阱装置施加磁场的磁场发生器。

公开(公告)号：US07312096B2

公开(公告)日：2007-12-25

申请号：US11403694

申请日：2006-04-13

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: H01L21/00

CPC classification number: B82Y10/00 ,  G01L1/005 ,  G01L1/18 ,  G01L9/0055 ,  Y10S977/864 ,  Y10S977/932

Abstract: There is disclosed a nanotube sensor which essentially employs a straight or twisted nanotube deposited on a supporting surface, such as silicon, silicon dioxide and some other semiconductor or metal material. The nanotube is basically a graphite device which is now subjected to stress causing the electrical characteristics of the nanotube to change according to stress. The nanotube is then provided in a circuit, such as a Wheatstone Bridge or other circuit, and the circuit will produce an output signal proportional to the change in electrical characteristics of the nanotube according to the applied force.

Abstract translation: 公开了一种纳米管传感器，其基本上采用沉积在诸如硅，二氧化硅和一些其它半导体或金属材料的支撑表面上的直的或扭曲的纳米管。 纳米管基本上是石墨装置，其现在受到使纳米管的电特性根据应力而变化的应力。 然后将纳米管提供在例如惠斯通电桥或其他电路的电路中，并且该电路将根据所施加的力产生与纳米管的电特性变化成比例的输出信号。

公开(公告)号：US20070108434A1

公开(公告)日：2007-05-17

申请号：US11281093

申请日：2005-11-17

Applicant: Anthony Kurtz ,  Boaz Kochman

Inventor： Anthony Kurtz ,  Boaz Kochman

IPC: H01L29/06 ,  H01L31/00

CPC classification number: G01L9/0098 ,  B82Y10/00 ,  G01L1/005 ,  H01L29/127

Abstract: A semiconductor heterostructure based pressure switch comprising: first and second small bandgap material regions separated by a larger bandgap material region; a third small bandgap material region within the region of larger bandgap material, the third material region and larger bandgap material region defining at least one quantum dot; and, first and second electrodes electrically coupled to the first and second small bandgap material regions, respectively, wherein the electrodes are sufficiently proximate to said quantum dot to facilitate electron tunneling there between when a pressure is applied to the bandgap material defining the quantum dot.

Abstract translation: 一种基于半导体异质结构的压力开关，包括：由较大带隙材料区域分隔的第一和第二小带隙材料区域; 在较大带隙材料的区域内的第三小带隙材料区域，第三材料区域和限定至少一个量子点的较大带隙材料区域; 以及分别电耦合到第一和第二小带隙材料区域的第一和第二电极，其中当将压力施加到限定量子点的带隙材料时，电极足够靠近所述量子点以促进电子隧穿。

公开(公告)号：US20070034975A1

公开(公告)日：2007-02-15

申请号：US11403694

申请日：2006-04-13

Applicant: Anthony Kurtz

Inventor： Anthony Kurtz

IPC: H01L29/84

CPC classification number: B82Y10/00 ,  G01L1/005 ,  G01L1/18 ,  G01L9/0055 ,  Y10S977/864 ,  Y10S977/932

Abstract: There is disclosed a nanotube sensor which essentially employs a straight or twisted nanotube deposited on a supporting surface, such as silicon, silicon dioxide and some other semiconductor or metal material. The nanotube is basically a graphite device which is now subjected to stress causing the electrical characteristics of the nanotube to change according to stress. The nanotube is then provided in a circuit, such as a Wheatstone Bridge or other circuit, and the circuit will produce an output signal proportional to the change in electrical characteristics of the nanotube according to the applied force.

公开(公告)号：US20060220781A1

公开(公告)日：2006-10-05

申请号：US11389065

申请日：2006-03-27

Applicant: Tetsuya Kuwashima ,  Naoki Ohta

Inventor： Tetsuya Kuwashima ,  Naoki Ohta

IPC: H01L43/00

CPC classification number: G01L1/005 ,  G01P15/0894 ,  G01P15/18 ,  H01L45/00

Abstract: This invention provides a tunneling effect element that has versatility and that does not receive the effects of drift due to differences in the thermal-expansion coefficient of the lower and upper electrodes, and is not easily affected by external magnetic fields. The disclosed tunneling effect element 1 comprises: an insulating layer 11 that forms a tunneling barrier, a lower electrode 12 that is conductive and is formed on the bottom surface of the insulating layer 11, an upper electrode 13 that is conductive and is formed on the top surface of the insulating layer 11, and a transmission member 5 that is formed around the insulating layer 11, lower electrode 12 and upper electrode 13, and transmits the behavior of the object to be detected to the insulating layer 11.

Abstract translation: 本发明提供了具有通用性的隧道效应元件，并且由于上下电极的热膨胀系数的差异而不会受到漂移的影响，并且不容易受到外部磁场的影响。 所公开的隧道效应元件1包括：形成隧道势垒的绝缘层11，导电并形成在绝缘层11的底表面上的下电极12，导电并形成在绝缘层11上的上电极13 绝缘层11的上表面和形成在绝缘层11，下电极12和上电极13周围的透射构件5，并将被检测物体的行为传递到绝缘层11。

公开(公告)号：US20060054984A1

公开(公告)日：2006-03-16

申请号：US11227624

申请日：2005-09-15

Applicant: Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

Inventor： Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

IPC: H01L29/84

CPC classification number: G01P15/124 ,  B81B3/0035 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0109 ,  G01L1/005 ,  G01L9/0098 ,  H03B5/12 ,  H03B5/1237 ,  H03B5/30

Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.

Abstract translation: 一种MOS晶体管，其具有形成在半导体衬底中的可变形栅极，包括源极和漏极区域，所述源极区域和漏极区域由沿着从源极到漏极的第一方向延伸的沟道区域和与第一方向垂直的第二方向分开， 至少在所述通道区域上方，在所述通道区域的每一侧上放置在所述基板上的支承点之间沿所述第二方向延伸，并且使得所述通道区域的表面是中空的，并且具有与所述栅极梁的形状类似的形状 光束朝向通道区域的最大偏转。

公开(公告)号：US20030164048A1

公开(公告)日：2003-09-04

申请号：US10198410

申请日：2002-07-18

Inventor： Yuri M. Shkel

IPC: G01L001/00

CPC classification number: G01L1/142 ,  G01L1/005 ,  G01L1/25

Abstract: An apparatus and method directed to a solid-state capacitance sensor for measuring a strain force on a dielectric having a corresponding dielectric constant includes at least one pair of electrodes disposed so as to interface with the dielectric. The sensor preferably includes a measuring circuit coupled to the electrodes to measure a change in the dielectric constant in response to the force. In operation, the change in the dielectric constant is caused by an electrostrictive response of the dielectric upon deformation. Preferably, the response is quantified by computing a change in the dielectric constant based on a measured change in capacitance. The electrodes may be fixed to the dielectric, and the measuring circuit determines the change in the dielectric constant by measuring a change in capacitance between the pair of electrodes and then computing the change in the dielectric constant. The force can then be computed based on both the change in dielectric constant and the electrostriction parameters associated with the dielectric.

Abstract translation: 涉及用于测量具有相应介电常数的电介质上的应变力的固态电容传感器的装置和方法包括设置成与电介质接合的至少一对电极。 传感器优选地包括耦合到电极的测量电路，以测量响应于该力的介电常数的变化。 在操作中，介电常数的变化由电介质在变形时的电致伸缩响应引起。 优选地，通过基于测量的电容变化计算介电常数的变化来量化响应。 电极可以固定到电介质上，并且测量电路通过测量一对电极之间的电容变化，然后计算介电常数的变化来确定介电常数的变化。 然后可以基于介电常数的变化和与电介质相关的电致伸缩参数两者来计算力。