公开(公告)号：US11315943B2

公开(公告)日：2022-04-26

申请号：US16643965

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Praburam Gopalraja ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L27/11582 ,  H01L27/11556

Abstract: Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features.

公开(公告)号：US20220026807A1

公开(公告)日：2022-01-27

申请号：US17356304

申请日：2021-06-23

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/40 ,  C23C16/50 ,  C23C16/455

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20220002869A1

公开(公告)日：2022-01-06

申请号：US17351096

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Aaron Dangerfield ,  Mark Joseph Saly ,  David Michael Thompson ,  Susmit Singha Roy ,  Regina Freed

IPC: C23C16/455 ,  G03F7/16

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

公开(公告)号：US20210257375A1

公开(公告)日：2021-08-19

申请号：US17228034

申请日：2021-04-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Takehito Koshizawa ,  Mukund Srinivasan ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Sung-Kwan Kang ,  Gill Y. Lee ,  Susmit Singha Roy

IPC: H01L27/1157 ,  H01L27/11582

Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

公开(公告)号：US20210233918A1

公开(公告)日：2021-07-29

申请号：US17227925

申请日：2021-04-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Takehito Koshizawa ,  Mukund Srinivasan ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Sung-Kwan Kang ,  Gill Y. Lee ,  Susmit Singha Roy

IPC: H01L27/1157 ,  H01L27/11582

Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

公开(公告)号：US11069568B2

公开(公告)日：2021-07-20

申请号：US16803211

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/324

Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.

公开(公告)号：US10950498B2

公开(公告)日：2021-03-16

申请号：US16583749

申请日：2019-09-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Srinivas Gandikota ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/301 ,  H01L21/46 ,  H01L21/78 ,  H01L21/768 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/11556 ,  H01L23/528 ,  H01L21/285 ,  H01L23/532 ,  H01L21/311

Abstract: Methods of dep-etch in semiconductor devices (e.g. V-NAND) are described. A metal layer is deposited in a feature. The metal layer is removed by low temperature atomic layer etching by oxidizing the surface of the metal layer and etching the oxide in a layer-by-layer fashion. After removal of the metal layer, the features are filled with a metal.

公开(公告)号：US20200373310A1

公开(公告)日：2020-11-26

申请号：US16517956

申请日：2019-07-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Takehito Koshizawa ,  Mukund Srinivasan ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Sung-Kwan Kang ,  Gill Y. Lee ,  Susmit Singha Roy

IPC: H01L27/1157 ,  H01L27/11582

Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

公开(公告)号：US20200279772A1

公开(公告)日：2020-09-03

申请号：US16647310

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Amrita B. Mullick

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/44 ,  C23C16/42 ,  C23C16/56

Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.

公开(公告)号：US20190385849A1

公开(公告)日：2019-12-19

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/321

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.