公开(公告)号：US20060158538A1

公开(公告)日：2006-07-20

申请号：US11036647

申请日：2005-01-14

申请人： Howard Rhodes ,  Hidetoshi Nozaki

发明人： Howard Rhodes ,  Hidetoshi Nozaki

IPC分类号： H04N5/335

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

摘要翻译： 使用具有掺杂有铟的多晶硅栅极的传输栅极的有源像素。 像素包括形成在半导体衬底中的感光元件和形成在半导体衬底中的n型浮动节点。 在浮动节点和感光元件之间形成具有传输门的n沟道传输晶体管。 像素衬底具有掺杂有铟掺杂剂的横向掺杂梯度。

公开(公告)号：US20060157806A1

公开(公告)日：2006-07-20

申请号：US11038594

申请日：2005-01-18

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L21/00 ,  H01L29/82

CPC分类号： H01L31/028 ,  H01L27/14609 ,  H01L27/14649 ,  H01L31/1037 ,  Y02E10/547

摘要： An image sensor is formed on a multilayered substrate to improve infrared response. The multilayered substrate uses a silicon-germanium alloy to improve infrared response. In one embodiment, the silicon-germanium alloy has a germanium concentration gradient such that an upper portion of the silicon-germanium alloy has a lower germanium concentration than a lower portion of said silicon-germanium alloy.

摘要翻译： 图像传感器形成在多层基板上以改善红外响应。 多层基板使用硅 - 锗合金来改善红外线响应。 在一个实施例中，硅 - 锗合金具有锗浓度梯度，使得硅 - 锗合金的上部具有比所述硅 - 锗合金的下部更低的锗浓度。

公开(公告)号：US20060148120A1

公开(公告)日：2006-07-06

申请号：US11029704

申请日：2005-01-04

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14643 ,  H01L31/18

摘要： A method of alloying an image sensor is disclosed. The method comprises forming various semiconductor devices in a semiconductor substrate. Then, an insulator layer is formed over the semiconductor devices. Finally, deuterium gas is used to alloy said image sensor after the insulator oxide layer has been formed and prior to formation of contact holes in the insulator oxide layer.

摘要翻译： 公开了一种合成图像传感器的方法。 该方法包括在半导体衬底中形成各种半导体器件。 然后，在半导体器件上形成绝缘体层。 最后，在形成绝缘体氧化物层之后和在形成绝缘体氧化物层内的接触孔之前，使用氘气合金所述图像传感器。

公开(公告)号：US20060118781A1

公开(公告)日：2006-06-08

申请号：US11003298

申请日：2004-12-03

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/1462 ,  H01L27/14609 ,  H01L27/14689

摘要： A pixel for use in CMOS or CCD image sensors is disclosed. The pixel includes a light sensitive element, such as a photodiode, formed in a semiconductor substrate. A polysilicon layer, such as a P+ doped polysilicon, is formed over the photodiode to reduce reflection of incident light and acting as a pinning layer. The reduced reflection results in greater “signal” reaching the photodiode.

摘要翻译： 公开了一种用于CMOS或CCD图像传感器的像素。 像素包括形成在半导体衬底中的诸如光电二极管的光敏元件。 在光电二极管上形成多晶硅层，例如掺杂POD的掺杂多晶硅，以减少入射光的反射并充当钉扎层。 减少的反射导致更大的“信号”到达光电二极管。

公开(公告)号：US20060105489A1

公开(公告)日：2006-05-18

申请号：US11318510

申请日：2005-12-28

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/14643

摘要： A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V.

摘要翻译： 公开了一种用于具有约0.3V至小于约0.7V的低阈值电压的CMOS成像器中的像素单元的晶体管。 晶体管在栅极周围设置有高剂量源极和漏极区域，并且从栅电极的至少一侧省略了光晕注入区域和/或轻掺杂LDD区域和/或增强注入区域。 低阈值晶体管电连接到具有约0.7V的高阈值电压的高压晶体管。

公开(公告)号：US20060001060A1

公开(公告)日：2006-01-05

申请号：US10881525

申请日：2004-07-01

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035272

摘要： A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have the gate profile of a transfer gate or a reset gate. The HDR transistor may be located on a side of the photodiode that is the same, opposite to, or perpendicular to the transfer gate. The leakage through the HDR transistor may be controlled by modifying the photodiode implants around the transistor. The photodiode implants at the HDR transistor may be placed similarly to the implants at the transfer gate. However, when the photodiode implants are moved away from the HDR transistor, leakage is reduced. When the photodiode implants are moved farther under the HDR transistor, leakage is increased to the extent desirable. The leakage through the HDR transistor may also be controlled by applying a voltage across the transistor.

公开(公告)号：US20050282377A1

公开(公告)日：2005-12-22

申请号：US11213278

申请日：2005-08-26

申请人： Howard Rhodes ,  Luan Tran

发明人： Howard Rhodes ,  Luan Tran

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L23/485 ,  H01L23/522 ,  H01L27/108

CPC分类号： H01L27/10894 ,  H01L21/76805 ,  H01L21/76838 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10882 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and fabrication process wherein the device includes a conductive layer with a localized thick region positioned below the contact hole. In one embodiment of the invention, the thick region to which contact is made is formed by means of an opening in an underlayer of material. This embodiment of the device includes an underlayer of material having an opening therein; a layer of thin conductive material formed on the underlayer and in the opening; and overlayer of material having a contact hole therethrough formed on the layer of thin conductive material; a conductor contacting the layer of thin conductive material through the contact hole; and wherein the opening in the underlayer is positioned below the contact hole and sized and shaped to form a localized thick region in the layer of thin conductive material within the opening.

公开(公告)号：US20050282376A1

公开(公告)日：2005-12-22

申请号：US11213267

申请日：2005-08-26

申请人： Howard Rhodes ,  Luan Tran

发明人： Howard Rhodes ,  Luan Tran

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L23/485 ,  H01L23/522 ,  H01L27/108

CPC分类号： H01L27/10894 ,  H01L21/76805 ,  H01L21/76838 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10882 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and fabrication process wherein the device includes a conductive layer with a localized thick region positioned below the contact hole. In one embodiment of the invention, the thick region to which contact is made is formed by means of an opening in an underlayer of material. This embodiment of the device includes an underlayer of material having an opening therein; a layer of thin conductive material formed on the underlayer and in the opening; and overlayer of material having a contact hole therethrough formed on the layer of thin conductive material; a conductor contacting the layer of thin conductive material through the contact hole; and wherein the opening in the underlayer is positioned below the contact hole and sized and shaped to form a localized thick region in the layer of thin conductive material within the opening.

摘要翻译： 一种半导体器件和制造工艺，其中该器件包括具有位于接触孔下方的局部厚区域的导电层。 在本发明的一个实施例中，通过材料底层中的开口形成接触的厚区域。 该装置的该实施例包括其中具有开口的材料底层; 形成在底层和开口中的薄导电材料层; 以及在所述薄导电材料层上形成有通孔的材料的覆盖层; 通过所述接触孔与所述薄导电材料层接触的导体; 并且其中所述底层中的开口位于所述接触孔的下方，并且其尺寸和形状以在所述开口内的所述薄导电材料层中形成局部厚的区域。

公开(公告)号：US20050274994A1

公开(公告)日：2005-12-15

申请号：US10865762

申请日：2004-06-14

申请人： Howard Rhodes

发明人： Howard Rhodes

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/04 ,  H01L29/49

CPC分类号： H01L29/4983 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/14812

摘要： An imager having gates with spacers formed of a high dielectric material. The high dielectric spacer provides larger fringing fields for charge transfer and improves image lag and charge transfer efficiency.

摘要翻译： 具有由高介电材料形成的间隔物的成像器。 高介电间隔物为电荷转移提供了更大的边缘场，并提高了图像滞后和电荷转移效率。

公开(公告)号：US06960796B2

公开(公告)日：2005-11-01

申请号：US10303897

申请日：2002-11-26

申请人： Howard Rhodes ,  Jeff McKee

发明人： Howard Rhodes ,  Jeff McKee

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/768 ,  H01L31/062

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14609

摘要： A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.

摘要翻译： 公开了连接到CMOS成像器的各种光敏元件和/或电元件的电荷存储电容器以及形成方法。 电荷存储电容器可以完全在CMOS成像器的场氧化物区域上形成，整个在像素传感器单元的有效区域上，或部分地在场氧化物区域上，部分地在像素传感器单元的有源像素区域上形成。