公开(公告)号：US20140038380A1

公开(公告)日：2014-02-06

申请号：US14017942

申请日：2013-09-04

Applicant: Kabushiki Kaisha Toshiba ,  Intermolecular Inc.

Inventor： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Dipankar Pramanik ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

IPC: H01L45/00

CPC classification number: C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Abstract translation: 公开了一种非易失性存储元件，其包括第一电极，具有双稳态电阻的近化学计量的金属氧化物存储层和与近化学计量的金属氧化物存储层接触的第二电极。 至少一个电极是包含亚化学计量的过渡金属氮化物或氮氧化物的电阻电极，并且具有0.1至10Ωm的电阻率。 电阻电极提供嵌入式限流电阻器的功能，并且还用作用于设置和复位金属氧化物层的电阻状态的氧空位的源极和吸收器。 还公开了用于第二电极的新颖制造方法。

公开(公告)号：US20130099191A1

公开(公告)日：2013-04-25

申请号：US13656908

申请日：2012-10-22

Applicant: INTERMOLECULAR, INC.

Inventor： Ronald J. Kuse ,  Tony P. Chiang ,  Imran Hashim

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/1616 ,  H01L45/1641

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。

公开(公告)号：US20130056852A1

公开(公告)日：2013-03-07

申请号：US13668488

申请日：2012-11-05

Applicant: Intermolecular, Inc.

Inventor： Imran Hashim ,  Edward L. Haywood ,  Sandra G. Malhotra ,  Xiangxin Rui ,  Sunil Shanker

IPC: H01L29/92

CPC classification number: H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/31604 ,  H01L28/91

Abstract: Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.

Abstract translation: 描述了用于沉积高K电介质的方法，包括在衬底上沉积第一电极，其中第一电极选自铂和钌，对暴露的金属施加氧等离子体处理以减小接触角 并且使用化学气相沉积工艺和原子层沉积工艺中的至少一种在暴露的金属上沉积氧化钛层，其中所述氧化钛层包含至少一部分金红石型氧化钛。