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    Magnetoresistive random access memory
    101.
    发明授权
    Magnetoresistive random access memory 有权
    磁阻随机存取存储器

    公开(公告)号：US08796045B2

    公开(公告)日：2014-08-05

    申请号：US13689102

    申请日：2012-11-29

    Applicant: International Business Machines Corporation

    Inventor： Daniel C. Worledge

    IPC: H01L43/08 ,  H01L27/22

    CPC classification number: H01L43/12 ,  G11C11/1675 ,  H01L27/222

    Abstract: A method of forming a magnetic random access memory (MRAM) device includes forming at least one write line, forming a first insulating layer over the at least one write line and forming a heating line on the first insulating layer. The method includes forming at least one tunnel junction above the at least one write line, the at least one tunnel junction connected to the heating line, forming a second insulating layer on the heating line and forming heat current supply vias at each end of the current line. The method further includes forming heat current supply lines connected to each heat current supply via and forming at least one read line above the at least one tunnel junction and physically connected to the at least one tunnel junction.

    Abstract translation: 形成磁随机存取存储器（MRAM）器件的方法包括：形成至少一条写入线，在所述至少一条写入线上形成第一绝缘层，并在所述第一绝缘层上形成加热线。 该方法包括在至少一个写入线上方形成至少一个隧道结，至少一个连接到加热线的隧道结，在加热线上形成第二绝缘层，并在电流的每一端形成热电流供应通孔 线。 该方法还包括形成连接到每个热电流供应通路的热电流供应管线，并且形成至少一个隧道结上方的至少一条读取线，并物理连接至该至少一个隧道结。

    Double spin filter tunnel junction
    102.
    发明授权
    Double spin filter tunnel junction 有权

    公开(公告)号：US11569439B2

    公开(公告)日：2023-01-31

    申请号：US15791893

    申请日：2017-10-24

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Daniel C. Worledge

    IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

    Abstract: A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.

    Spin hall write select for magneto-resistive random access memory
    104.
    发明授权
    Spin hall write select for magneto-resistive random access memory 有权

    公开(公告)号：US11164615B2

    公开(公告)日：2021-11-02

    申请号：US15922333

    申请日：2018-03-15

    Applicant: International Business Machines Corporation

    Inventor： Luqiao Liu ,  Jonathan Z. Sun ,  Daniel C. Worledge

    IPC: G11C11/16 ,  G11C11/18

    Abstract: A magneto-resistance random access memory (MRAM) cell includes a transistor, a wire and a magnetic tunnel junction (MTJ). The MTJ includes a fixed layer of fixed magnetic polarity electrically connected with the transistor, a free layer of variable magnetic polarity electrically connected with the wire and an insulator between the fixed and free layers. First current passed through the wire destabilizes the variable magnetic polarity of the free layer. Second current passed through the transistor in one of two directions during first current passage through the wire directs the variable magnetic polarity of the free layer toward a parallel or anti-parallel condition with respect to the fixed magnetic polarity of the fixed layer. A ceasing of the first current prior to a ceasing of the second current sets the variable magnetic polarity of the free layer in the parallel or anti-parallel condition.

    Thin reference layer for STT MRAM
    107.
    发明授权
    Thin reference layer for STT MRAM 有权

    公开(公告)号：US10361361B2

    公开(公告)日：2019-07-23

    申请号：US15094064

    申请日：2016-04-08

    Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

    Inventor： Guohan Hu ,  Younghyun Kim ,  Daniel C. Worledge

    IPC: H01L43/08 ,  H01L43/10

    Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A synthetic antiferromagnetic reference layer is adjacent to a tunnel barrier layer. The synthetic antiferromagnetic reference layer includes a first magnetic layer, a second magnetic layer, and a reference spacer layer sandwiched between the first magnetic layer and the second magnetic layer. A magnetic free layer is adjacent to the tunnel barrier layer so as to be opposite the synthetic antiferromagnetic reference layer. The synthetic antiferromagnetic reference layer has a thickness of at least one of 3 nanometers (nm), 4 nm, and 3-4 nm.

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