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265 条记录 (耗时 0.042 秒)

    Phase change memory cell defined by a pattern shrink material process
    101.
    发明申请
    Phase change memory cell defined by a pattern shrink material process 审中-公开
    相变存储单元由模式收缩材料过程定义

    公开(公告)号：US20060270216A1

    公开(公告)日：2006-11-30

    申请号：US11502078

    申请日：2006-08-10

    申请人： Thomas Happ

    发明人： Thomas Happ

    IPC分类号： H01L21/4763

    CPC分类号： H01L45/148 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1683 ,  H01L45/1691

    摘要： One embodiment of the present invention provides a memory cell device. The memory cell device includes a first electrode, a phase-change material adjacent the first electrode, and a second electrode adjacent the phase-change material. The phase-change material has a sublithographic width defined by a pattern shrink material process.

    摘要翻译： 本发明的一个实施例提供一种存储单元装置。 存储单元器件包括第一电极，与第一电极相邻的相变材料和与相变材料相邻的第二电极。 相变材料具有由图案收缩材料工艺限定的亚光刻宽度。

    Low power phase change memory cell with large read signal
    102.
    发明申请
    Low power phase change memory cell with large read signal 有权
    具有较大读取信号的低功率相变存储单元

    公开(公告)号：US20060261321A1

    公开(公告)日：2006-11-23

    申请号：US11133491

    申请日：2005-05-20

    申请人： Thomas Happ ,  Shoaib Zaidi ,  Jan Philipp

    发明人： Thomas Happ ,  Shoaib Zaidi ,  Jan Philipp

    IPC分类号： H01L47/00

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144 ,  H01L45/1675

    摘要： A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode, and a third portion between the first portion and the second portion. A width of the third portion is less than a width of the first portion and a width of the second portion.

    摘要翻译： 存储单元包括第一电极，第二电极和相变材料，其包括接触第一电极的第一部分，接触第二电极的第二部分和第一部分与第二部分之间的第三部分。 第三部分的宽度小于第一部分的宽度和第二部分的宽度。

    Resistive memory element
    106.
    发明授权
    Resistive memory element 失效
    电阻记忆元件

    公开(公告)号：US07023008B1

    公开(公告)日：2006-04-04

    申请号：US10953606

    申请日：2004-09-30

    申请人： Thomas Happ

    发明人： Thomas Happ

    IPC分类号： H01L47/00

    CPC分类号： G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

    摘要： An electrically operated, resistive memory element includes a volume of resistive memory material, adapted to be switched between different detectable resistive states in response to selected enery pulses; means for delivering electrical signals to at least a portion of the volume of resistive memory material; and a volume of heating material for Ohmic heating of the resistive memory material in response to the electrical signals. The volume of heating material is embedded in the volume of resistive memory material.

    摘要翻译： 电操作的电阻式存储元件包括一定体积的电阻性存储器材料，适于响应于所选择的功能脉冲在不同的可检测电阻状态之间切换; 用于将电信号传送到所述体积的电阻性存储器材料的至少一部分的装置; 以及用于响应于电信号对电阻式存储器材料进行欧姆加热的加热材料的体积。 加热材料的体积被嵌入电阻记忆材料的体积中。

    Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers
    108.
    发明申请
    Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers 失效
    用于优化薄硫族化物层的热稳定性的反应溅射工艺

    公开(公告)号：US20060043354A1

    公开(公告)日：2006-03-02

    申请号：US11214023

    申请日：2005-08-30

    申请人： Cay-Uwe Pinnow ,  Thomas Happ

    发明人： Cay-Uwe Pinnow ,  Thomas Happ

    IPC分类号： H01L29/02

    CPC分类号： C23C14/0623 ,  C23C16/305 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

    摘要： A chalcogenide layer includes a composition of compounds having the formula MmX1-m, where M denotes one or more elements selected from the group consisting of group IVb elements of the periodic system, group Vb elements of the periodic system and transition metals, X denotes one or more elements selected from the group consisting of S, Se and Te, and m has a value of between 0 and 1. The chalcogenide layer further includes an oxygen or nitrogen content in the range from 0.001 atomic % to 75 atomic %.

    摘要翻译： 硫族化物层包括具有式M 1 X 1-m的化合物的组合物，其中M表示一种或多种选自下组的IVb族元素： 周期性系统，Vb族元素和过渡金属，X表示选自S，Se和Te中的一种或多种元素，m具有0和1之间的值。硫族化物层还包括氧 或氮含量在0.001原子％至75原子％的范围内。

    Switching device for configurable interconnect and method for preparing the same
    109.
    发明申请
    Switching device for configurable interconnect and method for preparing the same 失效
    用于可配置互连的交换设备及其制备方法

    公开(公告)号：US20050219800A1

    公开(公告)日：2005-10-06

    申请号：US10812991

    申请日：2004-03-31

    申请人： Thomas Happ ,  Thomas Roehr

    发明人： Thomas Happ ,  Thomas Roehr

    IPC分类号： H01G9/025 ,  H01G9/04 ,  H01G9/15 ,  H01G9/22 ,  H01L23/525 ,  H01L27/24

    CPC分类号： H01G9/22 ,  H01G9/025 ,  H01G11/02 ,  H01G11/08 ,  H01G11/32 ,  H01G11/56 ,  H01L23/5252 ,  H01L2924/0002 ,  Y02E60/13 ,  H01L2924/00

    摘要： The present invention relates to a switching device to be irreversibly switched from an electrically isolating off-state into an electrically conducting on-state for use in a configurable interconnect, comprising two separate electrodes, at least one of which being a reactive metal electrode, and a solid state electrolyte arranged between said electrodes and being capable of electrolyte isolating said electrodes to define said off-state, said electrodes and said solid state electrolyte forming a redox-system having a mini-mum voltage (“turn-on voltage”) to start a redox reaction, the redox reaction resulting in the generation of metal ions to be released into said solid state electrolyte, the metal ions being reduced to increase a metal concentration within said solid state electrolyte, wherein an increase of said metal concentration results in a conductive metallic connection bridging the electrodes to define the on-state.

    摘要翻译： 本发明涉及一种从电绝缘断开状态不可逆地切换到用于可配置互连中的导电导通状态的开关装置，包括两个单独的电极，其中至少一个电极是反应性金属电极，以及 布置在所述电极之间并且能够电隔离所述电极以限定所述截止状态的固态电解质，所述电极和所述固态电解质形成具有最小电压（“导通电压”）的氧化还原系统以开始 氧化还原反应，氧化还原反应导致产生将被释放到所述固态电解质中的金属离子，金属离子被还原以增加所述固态电解质中的金属浓度，其中所述金属浓度的增加导致导电金属 连接桥接电极以限定导通状态。