High-resolution method for patterning a substrate with micro-printing
    101.
    发明授权
    High-resolution method for patterning a substrate with micro-printing 有权
    用微印刷图案化基板的高分辨率方法

    公开(公告)号:US06736985B1

    公开(公告)日:2004-05-18

    申请号:US09305722

    申请日:1999-05-05

    IPC分类号: H01L2100

    摘要: A method is disclosed for producing a high-resolution patterned layer on a substrate for use in making electronic devices. The method comprises micro-printing an inked pattern on a substrate with use of a rotatable stamp; passing the substrate to an apparatus for etching or depositing materials on the substrate, where the inked pattern guides the etching or deposition of material; and then optionally removing the inked pattern from the substrate with the application of heat, ultraviolet light, or wet chemical means. A high-quality transistor with a 2-micron channel length may be fabricated using the inventive method. The method is compatible with rapid, reel-to-reel patterning and useful for a range of applications.

    摘要翻译: 公开了用于在用于制造电子器件的基板上制造高分辨率图案层的方法。 该方法包括使用可旋转印模将印刷图案印刷在基底上; 将衬底传送到用于在衬底上蚀刻或沉积材料的装置,其中着墨图案引导材料的蚀刻或沉积; 然后通过施加热,紫外线或湿化学方法任选地从基板上去除着墨图案。 可以使用本发明的方法制造具有2微米沟道长度的高质量晶体管。 该方法与快速的卷对卷图案兼容,适用于一系列应用。

    Method of manufacturing a patterned light emitting diode devices

    公开(公告)号:US06372532B1

    公开(公告)日:2002-04-16

    申请号:US09754959

    申请日:2001-01-05

    IPC分类号: H01L2100

    摘要: An LED device that emits light in a pattern is disclosed. The LED device is a layer of active material that is sandwiched between a transparent substrate with an anode formed thereon and a cathode. The active material has a layer of light emitting material that emits light when electron/hole recombination is induced in the material. The patterned emission is defined by a patterned layer in the active material of the LED device. The patterned layer has at least a first thickness and a second thickness. When the device is on, the portion of the device associated with the first thickness of the patterned layer is visually distinct from the portion of the device that is associated with the second thickness of the patterned layer.

    Organic thin film transistor having a phthalocyanine semiconductor layer
    106.
    发明授权
    Organic thin film transistor having a phthalocyanine semiconductor layer 失效
    具有酞菁半导体层的有机薄膜晶体管

    公开(公告)号:US5969376A

    公开(公告)日:1999-10-19

    申请号:US702073

    申请日:1996-08-23

    申请人: Zhenan Bao

    发明人: Zhenan Bao

    摘要: Thin film transistors in which the active layer is an ordered film of a pthalocyanine coordination compound with a field-effect mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity in the range of about 10.sup.-9 S/cm to about 10.sup.-7 S/cm at 20.degree. C. are disclosed. Examples of suitable pthalocyanines include copper pthalocyanine, zinc pthalocyanine, hydrogen pthalocyanine, and tin pthalocyanine. Thin film devices made of these materials have an on/off ratio of at least about 10.sup.4. It is advantageous if the device is fabricated using a process in which the substrate is heated to a temperature in the range of about 30.degree. C. to about 200.degree. C. when the film is formed thereon.

    摘要翻译: 薄膜晶体管,其中有源层是具有场效应迁移率大于10-3cm 2 / Vs并且导电率在约10-9S / cm至约10-7的范围内的酞菁配位化合物的有序膜 公开了20℃下的S / cm。 合适的酞菁的实例包括铜酞菁,锌酞菁,氢酞菁和锡酞菁。 由这些材料制成的薄膜器件具有至少约104的开/关比。如果该器件是使用其中将衬底加热到​​约30℃至约 当其上形成膜时为200℃。