公开(公告)号：US6150668A

公开(公告)日：2000-11-21

申请号：US391729

申请日：1999-09-08

申请人： Zhenan Bao ,  Ananth Dodabalapur ,  Howard Edan Katz ,  Venkataram Reddy Raju ,  John A. Rogers

发明人： Zhenan Bao ,  Ananth Dodabalapur ,  Howard Edan Katz ,  Venkataram Reddy Raju ,  John A. Rogers

IPC分类号： H01L29/786 ,  G09F9/30 ,  H01L27/15 ,  H01L27/32 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/3274 ,  H01L51/0545 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/005

摘要： A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.

摘要翻译： 公开了一种其中一个或多个薄膜晶体管与发光二极管单片集成的器件。 薄膜晶体管具有有机半导体层。 发光二极管的发光层也是有机材料。 通过将薄膜晶体管和发光二极管的制造集成在衬底上并通过采用低成本制造技术来经济地制造器件。

公开(公告)号：US06197663B1

公开(公告)日：2001-03-06

申请号：US09456210

申请日：1999-12-07

申请人： Edwin Arthur Chandross ,  Ananth Dodabalapur ,  Howard Edan Katz ,  Venkataram Reddy Raju

发明人： Edwin Arthur Chandross ,  Ananth Dodabalapur ,  Howard Edan Katz ,  Venkataram Reddy Raju

IPC分类号： H01L2130

CPC分类号： H01L29/78603 ,  H01L29/66765 ,  H01L29/78681 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0545

摘要： A process for fabricating an integrated circuit device is disclosed. The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate. At least the interconnect structure is formed on a second substrate. The two substrates are laminated together to form the integrated circuit device having fully formed TFTs.

摘要翻译： 公开了一种用于制造集成电路器件的工艺。 集成电路具有多个TFT和电互连结构。 在该过程中，TFT的至少一些成分形成在第一基板上。 至少在第二基板上形成互连结构。 将两个基板层叠在一起以形成具有完全形成的TFT的集成电路器件。

公开(公告)号：US06575013B2

公开(公告)日：2003-06-10

申请号：US09793642

申请日：2001-02-26

申请人： Zhenan Bao ,  Brian Keith Crone ,  Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

发明人： Zhenan Bao ,  Brian Keith Crone ,  Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

IPC分类号： G01N33497

CPC分类号： G01N33/0031 ,  G01N27/4148 ,  G01N33/0047

摘要： An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

公开(公告)号：US06661299B2

公开(公告)日：2003-12-09

申请号：US09793050

申请日：2001-02-26

申请人： Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

发明人： Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

IPC分类号： H03B100

CPC分类号： G01N27/4141 ,  G01N27/4148 ,  H01L27/28 ,  H01L27/286 ,  H01L51/0036 ,  H01L51/0078 ,  H01L51/0545

摘要： Circuits include at least one-odor sensitive organic transistor having a conduction channel whose conductivity changes in response to certain odors. The organic transistors are interconnected to increase their response to selected odor signals. The organic transistors may be interconnected to form a ring oscillator whose frequency of oscillation changes in response to an odor signal and in which the alternating signal applied to the gate electrodes of the organic transistors enhances their recovery and reduces their drift.

公开(公告)号：US06278127B1

公开(公告)日：2001-08-21

申请号：US08441142

申请日：1995-05-15

申请人： Ananth Dodabalapur ,  Robert Cort Haddon ,  Howard Edan Katz ,  Luisa Torsi

发明人： Ananth Dodabalapur ,  Robert Cort Haddon ,  Howard Edan Katz ,  Luisa Torsi

IPC分类号： H01L5100

CPC分类号： H01L51/0562 ,  B82Y10/00 ,  G09G3/3648 ,  G09G2300/08 ,  G11C13/0014 ,  H01L27/283 ,  H01L51/0036 ,  H01L51/0046 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0541 ,  H01L51/0545

摘要： Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of &agr;-6T with a 40 nm thick layer of C60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm &agr;-6T layer.

摘要翻译： 公开了根据偏置条件可以是n沟道或p沟道晶体管的有机薄膜晶体管。 期望这种晶体管在互补电路中被广泛使用。 本发明晶体管的具体实施方案包括15nm厚的α-6T层，其上具有40nm厚的C60层。 后者通过适当的电惰性层，特别是通过40nm的α-6T层被保护免受环境的降解。

公开(公告)号：US07704784B2

公开(公告)日：2010-04-27

申请号：US11354365

申请日：2006-02-15

申请人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

发明人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

摘要翻译： 半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。 这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。

公开(公告)号：US06885024B2

公开(公告)日：2005-04-26

申请号：US10256885

申请日：2002-09-27

申请人： Zhenan Bao ,  Howard Edan Katz ,  Christian Kloc

发明人： Zhenan Bao ,  Howard Edan Katz ,  Christian Kloc

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0012 ,  H01L51/0014

摘要： A method fabricates ICs in which organic semiconductor crystallites serve as active channels of semiconductor devices. The method includes providing a substrate with a surface that has a preselected pattern of adhesion sites located thereon. The adhesion sites are prepared to adhere crystallites of an organic semiconductor. The method also includes applying a plurality of crystallites of the organic semiconductor to the surface to enable a portion of the applied crystallites to adhere at the prepared adhesion sites.

公开(公告)号：US07122828B2

公开(公告)日：2006-10-17

申请号：US10671303

申请日：2003-09-24

申请人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

发明人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

IPC分类号： H01L35/24

CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

摘要翻译： 半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。 这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。

公开(公告)号：US07045470B2

公开(公告)日：2006-05-16

申请号：US10701185

申请日：2003-11-04

申请人： Zhenan Bao ,  Howard Edan Katz

发明人： Zhenan Bao ,  Howard Edan Katz

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/3205 ,  H01L21/4963 ,  H01L21/336

CPC分类号： H01L21/02203 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/3121 ,  H01L29/4908 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： Apparatus comprising: a first substrate; a dielectric layer comprising a first dielectric material on the first substrate, the dielectric layer having a dielectric layer thickness and being traversed by through holes passing from an interface with the first substrate, to an opposite side of the dielectric layer; and a second dielectric material at least partially blocking the through holes. Methods for making such apparatus.

摘要翻译： 一种装置，包括：第一基板; 电介质层，其包括在所述第一基板上的第一电介质材料，所述电介质层具有电介质层厚度，并且穿过通过所述第一基板的界面的通孔到所述电介质层的相对侧; 以及至少部分地阻挡通孔的第二电介质材料。 制造这种装置的方法。

公开(公告)号：US08963126B2

公开(公告)日：2015-02-24

申请号：US12743977

申请日：2009-01-07

申请人： Howard Edan Katz ,  Bhola Nath Pal ,  Kevin Cua See ,  Byung Jun Jung

发明人： Howard Edan Katz ,  Bhola Nath Pal ,  Kevin Cua See ,  Byung Jun Jung

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/40 ,  H01L51/05 ,  H01G9/00 ,  H01G9/022 ,  H01G9/045 ,  H01L51/10 ,  C07D333/50 ,  C07D409/00 ,  C07D495/22

CPC分类号： H01L29/408 ,  H01G9/00 ,  H01G9/022 ,  H01G9/045 ,  H01L29/401 ,  H01L51/0053 ,  H01L51/0533 ,  H01L51/0558 ,  H01L51/102

摘要： Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.

摘要翻译： 混合半导体介电材料和使用混合半导体介电材料的电子或电光器件。 混合半导体介电材料包括具有提供n型半导体性质的芯部分和向混合半导体介电材料层提供介电特性的侧链的分子。 具体的杂化半导体介电材料包括具有侧链的四羧酸二酰亚胺化合物，其具有通过亚烷基或杂亚烷基连接基团与四羧酸二酰亚胺结构连接的氟取代的脂族或芳族部分。