公开(公告)号：US20120205769A1

公开(公告)日：2012-08-16

申请号：US13028471

申请日：2011-02-16

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Hsiao-Hui Tseng

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Hsiao-Hui Tseng

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L27/14687 ,  H01L23/481 ,  H01L23/525 ,  H01L24/83 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14689

摘要： Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有连接前侧和后侧的前侧，后侧和侧壁。 图像传感器装置包括设置在基板中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层并且延伸超过衬底的侧壁。 图像传感器装置包括与衬底的侧壁间隔开的接合焊盘。 接合焊盘电连接到互连结构的互连层之一。

公开(公告)号：US08227899B2

公开(公告)日：2012-07-24

申请号：US12553586

申请日：2009-09-03

申请人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu

发明人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L21/71 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Provided is an apparatus that includes an integrated circuit located in a first region of a substrate having first and second opposing major surfaces and an alignment mark located in a second region of the substrate and extending through the substrate between the first and second surfaces.

摘要翻译： 提供了一种装置，其包括位于具有第一和第二相对主表面的基板的第一区域中的集成电路和位于基板的第二区域中并在第一和第二表面之间延伸穿过基板的对准标记。

公开(公告)号：US20100091163A1

公开(公告)日：2010-04-15

申请号：US12557154

申请日：2009-09-10

申请人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H04N5/335 ,  H01L31/0232

CPC分类号： H01L27/14629 ,  H01L21/76829 ,  H01L21/76831 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14685 ,  H04N3/155

摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.

摘要翻译： 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域和逻辑区域的基板。 在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。 硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触 逻辑区域。 在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。 当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

公开(公告)号：US20090189233A1

公开(公告)日：2009-07-30

申请号：US12020149

申请日：2008-01-25

申请人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Chi-Hsin Lo ,  Feng-Jia Shiu ,  Chung-Yi Yu

发明人： Jen-Cheng Liu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Chi-Hsin Lo ,  Feng-Jia Shiu ,  Chung-Yi Yu

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

摘要： An optical image sensor is fabricated by forming a pixel array and a peripheral region surrounding the pixel array on a semiconductor substrate, the peripheral region containing peripheral circuitry. An inter-level-dielectric layer is formed over the substrate and a plurality of interconnect wiring layers are formed over the inter-level-dielectric layer. Each interconnect wiring layer includes interconnecting metal features and a layer of inter-level-dielectric material covering the interconnecting metal features. The plurality of interconnect wiring layers are provided in a manner that there are N levels of wiring layers in the peripheral region and 1 to (N−1) levels of wiring layers over the pixel array. An etch-stop layer is formed over the top-most level interconnecting metal features in the peripheral region.

摘要翻译： 通过在半导体衬底上形成围绕像素阵列的像素阵列和外围区域来制造光学图像传感器，该外围区域包含外围电路。 层间电介质层形成在衬底之上，并且在层间电介质层之上形成多个互连布线层。 每个互连布线层包括互连金属特征和覆盖互连金属特征的层间电介质材料层。 多个互连布线层的设置方式是在像素阵列的周边区域中有N层布线层和布线层的1层（N-1）层。 在外围区域中最顶层的互连金属特征上形成蚀刻停止层。

公开(公告)号：US09041841B2

公开(公告)日：2015-05-26

申请号：US12557154

申请日：2009-09-10

申请人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Yin-Kai Liao ,  Han-Chi Liu ,  Yuan-Hung Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14629 ,  H01L21/76829 ,  H01L21/76831 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14685 ,  H04N3/155

摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.

摘要翻译： 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域和逻辑区域的基板。 在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。 硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触 逻辑区域。 在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。 当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

公开(公告)号：US08952497B2

公开(公告)日：2015-02-10

申请号：US13619705

申请日：2012-09-14

申请人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

发明人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

IPC分类号： H01L21/78 ,  H01L23/00

CPC分类号： H01L21/78 ,  H01L22/32 ,  H01L22/34 ,  H01L23/562 ,  H01L23/585 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

摘要翻译： 晶片包括排列成行和列的多个芯片。 第一组多个划痕线在多个芯片的行之间。 第一多个划线中的每一个包括含有金属特征的金属特征，其中包含金属特征，以及与金属特征的划线相平行并相邻的金属特征自由划线。 第二多个划线在多个芯片的列之间。

公开(公告)号：US20140077320A1

公开(公告)日：2014-03-20

申请号：US13619705

申请日：2012-09-14

申请人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

发明人： U-Ting Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Shuang-Ji Tsai

IPC分类号： H01L23/544 ,  H01L21/78 ,  H01L27/146

CPC分类号： H01L21/78 ,  H01L22/32 ,  H01L22/34 ,  H01L23/562 ,  H01L23/585 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

摘要翻译： 晶片包括排列成行和列的多个芯片。 第一组多个划痕线在多个芯片的行之间。 第一多个划线中的每一个包括含有金属特征的金属特征，其中包含金属特征，以及与金属特征的划线相平行并相邻的金属特征自由划线。 第二多个划线在多个芯片的列之间。

公开(公告)号：US20140042299A1

公开(公告)日：2014-02-13

申请号：US13571184

申请日：2012-08-09

申请人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/18

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

摘要： A device includes an image sensor chip including an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip. The read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip. The peripheral circuit chip includes a logic circuit, a through via penetrating through a semiconductor substrate of the peripheral circuit chip, and an electrical connector at a bottom surface of the peripheral circuit chip. The electrical connector is electrically coupled to the logic circuit in the peripheral circuit chip through the through via.

摘要翻译： 一种设备包括其中包括图像传感器的图像传感器芯片。 一个读出的芯片是底层的，并粘贴到图像传感器芯片上。 读出芯片包括从基本上由复位晶体管，源极跟随器，行选择器及其组合组成的组中选择的逻辑器件。 逻辑器件和图像传感器彼此电耦合，并且是相同像素单元的部分。 外围电路芯片是底层的，并与读出的芯片结合。 外围电路芯片包括逻辑电路，穿透外围电路芯片的半导体衬底的贯通孔以及外围电路芯片底面的电连接器。 电连接器通过通孔电耦合到外围电路芯片中的逻辑电路。

公开(公告)号：US20130307103A1

公开(公告)日：2013-11-21

申请号：US13475301

申请日：2012-05-18

申请人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

发明人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

IPC分类号： H01L31/0232 ,  H01L31/02

CPC分类号： H01L27/14687 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469 ,  H01L2224/48463

摘要： A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.

摘要翻译： 一种装置包括背面照明（BSI）图像传感器芯片，其包括设置在第一半导体衬底的前侧上的图像传感器，以及包括在第一半导体衬底的前侧上的多个金属层的第一互连结构。 器件芯片被结合到图像传感器芯片。 器件芯片包括在第二半导体衬底的正面上的有源器件和在第二半导体衬底的正面上包括多个金属层的第二互连结构。 第一通孔穿过BSI图像传感器芯片以连接到第二互连结构中的第一金属焊盘。 第二通孔穿过第一互连结构中的电介质层，以连接到第一互连结构中的第二金属焊盘，其中第一通孔和第二通孔电连接。

公开(公告)号：US20130285180A1

公开(公告)日：2013-10-31

申请号：US13458812

申请日：2012-04-27

申请人： Tzu-Jui Wang ,  Szu-Ying Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Ping-Yin Liu ,  Lan-Lin Chao

发明人： Tzu-Jui Wang ,  Szu-Ying Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Ping-Yin Liu ,  Lan-Lin Chao

IPC分类号： H01L31/0232 ,  H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2924/0002 ,  H01L2924/00

摘要： A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip. The logic circuit, the second transistor and the first transistor are coupled to each other through a plurality of boding pads and through vias.

摘要翻译： 背面照明图像传感器包括光电二极管和位于第一芯片中的第一晶体管，其中第一晶体管电耦合到光电二极管。 背面照明图像传感器还包括形成在第二芯片中的第二晶体管和形成在第三芯片中的多个逻辑电路，其中第二芯片堆叠在第一芯片上，第三芯片堆叠在第二芯片上。 逻辑电路，第二晶体管和第一晶体管通过多个焊盘和通孔彼此耦合。