Abstract:
A solid-state image sensor that has a high pixel count and includes a color filter having high color reproducibility is provided. The solid-state image sensor includes: light-collecting elements each of which is a medium containing dispersant particles; light-receiving elements each of which is provided for a corresponding one of the light-collecting elements, and which receives light collected by the corresponding one of the light-collecting elements and generates an electric signal; and electrical wiring for transferring the electric signal, wherein each of the light-collecting elements has one of plural light-dispersion functions that are different depending on the corresponding light-receiving elements.
Abstract:
A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.
Abstract:
An unencoded m-bit data input sequence is divided into a block of n bits and a block of m−n bits. The block of n bits is divided into a first set of n+1 encoded bits, wherein at least one of P1 subblocks of the first set satisfies a G, M and I constraints. The first set of n+1 encoded bits is mapped into a second set of n+1 encoded bits wherein at least one of P2 subblocks of the second set gives rise to at least Q1 transitions after 1/(1+D2) preceding. A second set of n+1 encoded bits is divided into P3 encoded subblocks and the P3 encoded subblocks are interleaved among (m−n)/s unencoded symbols so as to form a (m+1)-bit output sequence codeword which is then stored on a data storage medium.
Abstract:
A laminate comprising a transparent collagen I type sheet and a human corneal endothelial cell culture layer provided on the sheet. An endothelial cell culture layer laminate usable in transplantation is provided.
Abstract:
Disclosed is a non-aqueous electrolyte battery comprising: a flat outer jacket comprising a metal sheet and having two primary flat portions facing each other; two active material layers of a first polarity respectively carried on inner surfaces of the flat portions; an electrode plate of a second polarity disposed in a position facing with each of the active material layers; and a separator layer interposed between each of the active material layers and the electrode plate of a second polarity, with the outer jacket serving as a current collector of the active material layers.
Abstract:
This invention provides an on-screen display device that can display an increased number of types of characters without enlarging the video RAM area. This on-screen display device includes a character generator ROM that has n (n is an integer that is equal to or larger than 3) areas, a flag holding unit that outputs an area designation flag for designating a desired number of desired areas among the n areas in the character generator ROM, a display character setting unit that writes a desired character code at a predetermined position in a video RAM, and a display control unit that reads the character code from the video RAM, reads font data corresponding to the read character code from an area in the character generator ROM, which is indicated by the area designation flag outputted from the flag holding unit, and outputs an on-screen output signal using the font data.
Abstract:
A process of forming a functional thin film uniformly on the surface of a large size glass substrate, which is used for construction or the like, and a glass substrate coated with a thin film formed by the above process are provided. A uniform metal oxide thin film is formed by: using large size plate glass produced by the float bath process, in which molten glass is poured into an Sn bath and gradually hardened; and applying by spraying a coating solution containing an alcohol as a solvent and 5% by mass to 15% by mass of water onto the bottom surface of the large size plate glass, which is formed by bringing the molten glass into contact with the Sn bath, while controlling the wettability of the coating solution on the glass substrate.
Abstract:
To charge surely depending on data transmitted through a TCP/IP communication network or the like with a simple configuration. In charging method for data transmission in a communication network in which a plurality of positions are connected to each other through a wide area network, sub-networks being connected to the respective positions through LANs, and sending of data from terminal stations in the sub-networks or receiving of data in the terminal stations being performed, sampling measurements of transmission states of originated data in the LANs and transmission states of incoming data in the LANs are performed in the LANS connected to respective positions, the data of the transmission states subjected to the sampling measurement being periodically transmitted to a predetermined center connected to the communication network, and an amount of charging to each sub-network being decided on the basis of the data of the transmission states transmitted to the center.
Abstract:
A memory device includes memory cells each having a capacitor including a lower electrode, a ferroelectric film and an upper electrode which are formed in this order over a substrate made of silicon. The ferroelectric film is selectively grown on the lower electrode. Such selective formation of the ferroelectric film on the lower electrode having a desired shape prevents a damaged portion from occurring in the ferroelectric film, thus making it possible to downsize the memory cells.
Abstract:
The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.