WORKING OBJECT GRINDING METHOD
    103.
    发明申请
    WORKING OBJECT GRINDING METHOD 有权
    工作对象研磨方法

    公开(公告)号:US20100311313A1

    公开(公告)日:2010-12-09

    申请号:US12744714

    申请日:2008-11-18

    申请人: Naoki Uchiyama

    发明人: Naoki Uchiyama

    IPC分类号: B24B1/00 B24B7/22 B23K26/36

    摘要: A working object grinding method capable of grinding a working object reliably is provided. A working object 1 is irradiated with a laser beam while locating a converging point therewithin, so as to form a reformed region 7 in the working object 1 along a reformed-region forming line set at a predetermined distance inside from an outer edge of the working object 1 along the outer edge, and a rear face 21 of the working object 1 is ground. As a result, the reformed region 7 or fissures C1 extending therefrom can inhibit fissures generated in an outer edge portion 25 upon grinding the working object 1 from advancing to the inside, whereby the working object 1 can be prevented from fracturing.

    摘要翻译: 提供能够可靠地研磨加工对象物的工件对象研磨方法。 工件1用激光束照射,同时在其间定位会聚点,以便沿加工区域形成线形成重新形成区域7,该重整区域沿着设置在工作对象1的外边缘内部预定距离内的重整区域形成线 物体1沿着外边缘,并且加工对象物1的背面21被研磨。 结果,由此可以使被加工区域7或从其延伸的裂缝C1能够抑制加工对象物1向内侧磨削而在外缘部25产生裂纹,能够防止加工对象物1的破裂。

    HYDROGEN-GAS CONCENTRATION SENSOR AND HYDROGEN-GAS CONCENTRATION MEASURING DEVICE
    105.
    发明申请
    HYDROGEN-GAS CONCENTRATION SENSOR AND HYDROGEN-GAS CONCENTRATION MEASURING DEVICE 审中-公开
    氢气浓度传感器和氢气浓度测量装置

    公开(公告)号:US20100166614A1

    公开(公告)日:2010-07-01

    申请号:US12377121

    申请日:2007-06-21

    IPC分类号: G01N27/12

    摘要: A hydrogen-gas concentration sensor comprises a substrate, and a plurality of hydrogen detecting films formed on the substrate, adjacent to one another. The hydrogen detecting films have a thin film layer, and a catalyst layer formed on the thin film layer. Each catalyst layer, when in contact with a hydrogen gas, exerts photocatalysis to hydrogenate each thin film layer reversibly and causes the electric resistance value thereof to change reversibly. The individual thin film layers have different sensitivities of a change in the hydrogen gas concentration vs. a change in the resistance value and different hydrogen gas concentration measurement ranges. The hydrogen-gas concentration sensor measures the hydrogen gas concentration with a thin film layer having a high sensitivity when the hydrogen gas concentration is low, and measures the hydrogen gas concentration with a thin film layer having a wide measurement range when the hydrogen gas concentration is high.

    摘要翻译: 氢气浓度传感器包括彼此相邻的基板和形成在基板上的多个氢气检测膜。 氢检测膜具有薄膜层和形成在薄膜层上的催化剂层。 每个催化剂层当与氢气接触时进行光催化,以可逆地氢化每个薄膜层,并使其电阻值可逆地改变。 各个薄膜层具有与氢气浓度变化相对于电阻值和不同氢气浓度测量范围的变化的不同灵敏度。 当氢气浓度低时,氢气浓度传感器利用具有高灵敏度的薄膜层来测量氢气浓度,并且当氢气浓度为1时测量具有宽测量范围的薄膜层的氢气浓度 高。

    SINGLE-CHAMBER-TYPE SOLID OXIDE FUEL CELL DEVICE
    107.
    发明申请
    SINGLE-CHAMBER-TYPE SOLID OXIDE FUEL CELL DEVICE 审中-公开
    单室型固体氧化物燃料电池装置

    公开(公告)号:US20090202881A1

    公开(公告)日:2009-08-13

    申请号:US12279302

    申请日:2007-02-09

    申请人: Naoki Uchiyama

    发明人: Naoki Uchiyama

    IPC分类号: H01M8/12

    摘要: A solid-oxide fuel cell having a fuel pole and an air pole joined to a solid oxide electrolyte is arranged in a combustion exhaust gas flow channel of an engine or the like (fuel cell containing section), thereby placed in a flow of high-temperature combustion exhaust gas introduced through an exhaust gas introduction section into the fuel cell containing section and discharged through an exhaust gas discharge section, so that the solid-oxide fuel cell is heated by the thermal energy of the combustion exhaust gas and generates electric power using a hydrocarbon compound and carbon oxide in the combustion exhaust gas, as fuel gas.

    摘要翻译: 在发动机等的燃烧废气流路(燃料电池容纳部)中配置具有与固体氧化物电解质结合的燃料极和空气极的固体氧化物型燃料电池, 将通过排气导入部导入燃料电池容纳部的高温燃烧废气通过废气排出部排出,使得固体氧化物燃料电池被燃烧废气的热能加热,并使用 作为燃料气体的燃烧废气中的烃化合物和碳氧化物。

    Semiconductor substrate cutting method
    108.
    发明申请
    Semiconductor substrate cutting method 审中-公开
    半导体衬底切割方法

    公开(公告)号:US20070085099A1

    公开(公告)日:2007-04-19

    申请号:US10571142

    申请日:2004-09-09

    IPC分类号: H01L33/00

    摘要: A semiconductor substrate cutting method which can efficiently cut a semiconductor substrate having a front face formed with a functional device together with a die bonding resin layer is provided. A wafer 11 having a front face 3 formed with a functional device 15 is irradiated with laser light L while positioning a light-converging point P within the wafer 11 with the rear face 17 of the wafer 11 acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting 8 due to a molten processed region 13 within the wafer 11 along a line along which the substrate should be cut 5. Consequently, a fracture can be generated from the starting point region for cutting 8 naturally or with a relatively small force, so as to reach the front face 3 and rear face 17. Therefore, when an expansion film 21 is attached to the rear face 17 of the wafer 11 by way of a die bonding resin layer 23 after forming the starting point region for cutting 8 and then expanded, the wafer 11 and die bonding resin layer 23 can be cut along the line along which the substrate should be cut 5.

    摘要翻译: 提供一种半导体衬底切割方法,其可以与芯片接合树脂层一起有效地切割具有由功能器件形成的正面的半导体衬底。 在晶片11的背面17作为激光入射面的状态下,将聚光点P定位在晶片11内的激光L照射形成有功能元件15的正面3的晶圆11, 以产生多光子吸收,由此由于晶片11内的熔融处理区域13沿着基板应被切割的线5而形成用于切割的起始点区域8。 因此,可以自然地以相对小的力从起始点区域8产生断裂,以到达前表面3和后表面17。 因此,在形成切割起点区域8之后,通过芯片接合树脂层23将膨胀膜21安装在晶片11的背面17上,然后膨胀时,晶片11和芯片接合树脂层23可以 沿着基板切割的线切割5。