公开(公告)号：US20080280385A1

公开(公告)日：2008-11-13

申请号：US12216959

申请日：2008-07-14

申请人： Hiroaki Tanaka

发明人： Hiroaki Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  G02F1/136227 ,  H01L21/76804 ,  H01L27/1248

摘要： A thin-film transistor includes a gate layer, a gate insulting layer, a semiconductor layer, a drain layer, a passivation layer (each of which being formed on or over an insulating substrate), and a conductive layer formed on the passivation layer. The conductive layer is connected to the gate layer or the drain layer by way of a contact hole penetrating at least the passivation layer. The passivation layer has a multiple-layer structure comprising at least a first sublayer and a second sublayer stacked, the first sublayer having a lower etch rate than that of the second sublayer. The first sublayer is disposed closer to the substrate than the second sublayer. The second sublayer has a thickness equal to or less than that of the conductive layer. The shape or configuration of the passivation layer and the underlying gate insulating layer can be well controlled in the etching process, and the conductive layer formed on the passivation layer is prevented from being divided.

摘要翻译： 薄膜晶体管包括栅极层，栅极绝缘层，半导体层，漏极层，钝化层（各自形成在绝缘基板上或绝缘基板上），以及形成在钝化层上的导电层。 导电层通过穿透至少钝化层的接触孔连接到栅极层或漏极层。 钝化层具有包括至少第一子层和堆叠的第二子层的多层结构，第一子层具有比第二子层的蚀刻速率更低的蚀刻速率。 第一子层比第二子层更靠近基板设置。 第二子层的厚度等于或小于导电层的厚度。 可以在蚀刻工艺中良好地控制钝化层和底层栅极绝缘层的形状或构造，并且防止形成在钝化层上的导电层被分割。

公开(公告)号：US20080179634A1

公开(公告)日：2008-07-31

申请号：US12018874

申请日：2008-01-24

申请人： Ryo Takiguchi ,  Shogo Numaguchi ,  Hiroaki Tanaka ,  Isao Hirota

发明人： Ryo Takiguchi ,  Shogo Numaguchi ,  Hiroaki Tanaka ,  Isao Hirota

IPC分类号： H04N5/335 ,  H01L27/148

CPC分类号： H01L27/14818 ,  H01L27/14837 ,  H04N5/335 ,  H04N5/372

摘要： A solid-state imaging device is provided. The imaging device includes an imaging portion which includes light receiving portions and vertical transfer registers, a horizontal transfer portion, an output part for outputting an electrical signal converted from electric charges transferred from the horizontal transfer portion, a first reference potential applying means, and a second reference potential applying means. The imaging portion, the horizontal transfer portion and the output part are formed in a first conductivity type semiconductor substrate having a second conductivity type region, and a reference potential is applied to the second conductivity type semiconductor region. The first reference potential applying means applies a reference potential to the second conductivity type semiconductor region corresponding to an area where the output part is formed. The second reference potential applying means applies a reference potential to the second conductivity type semiconductor region corresponding to an area where the imaging portion is formed.

摘要翻译： 提供了一种固态成像装置。 成像装置包括成像部分，其包括光接收部分和垂直传送寄存器，水平传送部分，用于输出从水平传送部分传送的电荷转换的电信号的输出部分，第一参考电位施加装置和 第二参考电位施加装置。 成像部分，水平转印部分和输出部分形成在具有第二导电类型区域的第一导电类型半导体衬底中，并且将参考电位施加到第二导电类型半导体区域。 第一参考电位施加装置对与形成输出部分的区域相对应的第二导电类型半导体区域施加参考电位。 第二参考电位施加装置对与形成有成像部分的区域相对应的第二导电类型半导体区域施加参考电位。

公开(公告)号：US20080174686A1

公开(公告)日：2008-07-24

申请号：US12013752

申请日：2008-01-14

申请人： Hiroaki Tanaka ,  Isao Hirota

发明人： Hiroaki Tanaka ,  Isao Hirota

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H04N5/372 ,  H04N5/3722

摘要： A solid-state imaging device and a charge transfer method are provided. The solid-state imaging device includes light receiving portions arranged in a matrix of rows and columns, vertical transfer portions, and a horizontal transfer portion. The vertical transfer portions are formed for each column of the matrix of the light receiving portions, for transferring charges transferred from the light receiving portions in a vertical direction. The horizontal transfer portion transfers the charges transferred from the vertical transfer portions in a horizontal direction. The vertical transfer portions divide the charges transferred to the vertical transfer portions and transfer the divided charges in the vertical direction. The horizontal transfer portion transfers the divided charges in a mixed state in the horizontal direction.

摘要翻译： 提供固态成像装置和电荷转移方法。 固态成像装置包括以行和列为矩阵排列的光接收部分，垂直传送部分和水平传送部分。 对于光接收部分的矩阵的每列形成垂直传送部分，用于在垂直方向上传送从光接收部分传送的电荷。 水平传送部分在水平方向上传送从垂直传送部分传送的电荷。 垂直传送部分将传送到垂直传送部分的电荷分开，并在垂直方向上传送分开的电荷。 水平传送部分在水平方向上以混合状态传送分割的电荷。

公开(公告)号：US20080142424A1

公开(公告)日：2008-06-19

申请号：US10597627

申请日：2005-01-28

申请人： Hiroshi Kitasako ,  Masao Katsube ,  Katsuhiro Sakamoto ,  Junzo Sago ,  Hiroaki Tanaka ,  Jun Tsumori

发明人： Hiroshi Kitasako ,  Masao Katsube ,  Katsuhiro Sakamoto ,  Junzo Sago ,  Hiroaki Tanaka ,  Jun Tsumori

IPC分类号： C02F3/20

CPC分类号： B01F5/0268 ,  B01F1/0022 ,  B01F3/0446 ,  B01F2003/04879 ,  B01F2215/0052

摘要： A gas-liquid dissolving apparatus that dissolves an oxygen-containing gas into water taken in from an oxygen-deficient water area, increases a dissolved oxygen concentration of the water, and returns the increased dissolved oxygen concentration water to the oxygen-deficient water area is provided. The apparatus includes a pump 3 that takes in the water from the oxygen-deficient water area, an oxygen supplying unit 4 that supplies the oxygen-containing gas, an elongated cylindrical gas-liquid dissolving chamber 5 that has at least one hole 5b formed in a lower portion and that has a dome-shaped top plate 5a provided in an upper portion, a nozzle 2 that ejects the gas from the oxygen supplying unit 4 and the water from the pump 3 upward so that the gas and the water strike against an inner wall of the top plate 5a of the gas-liquid dissolving chamber 5, that vigorously agitates the gas and the water by forces of the ejected gas and water, and that has a tip end having a tapered inside, a gas-liquid separating chamber 6 that communicates with the gas-liquid dissolving chamber 5 through the hole 5b, and that separates bubbles and the water flowing out from the gas-liquid dissolving chamber 5 through the hole 5b from each other while storing the bubbles and the water, and a water supply port 6b that returns the water separated from the bubbles to the oxygen-deficient water area.

摘要翻译： 将含氧气体从缺氧水区域吸入水中的气液溶解装置增加溶解氧的浓度，使氧浓度不足的水回流到氧缺水区域 提供。 该装置包括从缺氧水区域吸入水的泵3，供给含氧气体的供氧单元4，形成有至少一个孔5b的细长圆柱形气液溶解室5 在下部具有设置在上部的圆顶状的顶板5a，将来自氧供给单元4的气体和来自泵3的水向上方喷射的喷嘴2，使得气体和水的冲击 靠着气液溶解室5的顶板5a的内壁，由于排出的气体和水的力而剧烈地搅动气体和水，并且具有锥形内侧的顶端， 液体分离室6，其通过孔5b与气液溶解室5连通，并且通过孔5b将气泡和从气液溶解室5流出的水分离，同时储存气泡， 水和一个wat 呃供给端口6b将从气泡分离的水返回到缺水区域。

公开(公告)号：US20080067542A1

公开(公告)日：2008-03-20

申请号：US11632315

申请日：2005-06-03

申请人： Hiroaki Tanaka ,  Sachiko Kawaji

发明人： Hiroaki Tanaka ,  Sachiko Kawaji

IPC分类号： H01L29/739

CPC分类号： H01L29/7397 ,  H01L29/0696

摘要： The semiconductor device has a collector electrode, a p+ collector region formed on the collector electrode, an n− drift region formed on the collector region, a p− body region formed on the drift region, and a plurality of n+ emitter regions formed within the body region. The emitter regions are connected to an emitter electrode. A plurality of trench gate electrodes is formed within the body region. Each trench gate electrode opposes, via an insulating layer, a portion of the body region separating the drift region and the emitter region. The body region is divided into a plurality of body sections, and the body sections are classified into two groups. One group has the emitter region within the body section, and the other group has no emitter region within the body section. A plurality of first trenches is formed within the body section having no emitter region. A p+ contact region is formed between the first trench and the trench gate electrode.

摘要翻译： 半导体器件具有形成在集电极上的集电极，集电极集电极区域，形成在集电极区域上的n + SUP>体区域，以及形成在体区内的多个n + +发射极区域。 发射极区域连接到发射极电极。 在体区内形成多个沟槽栅电极。 每个沟槽栅电极经由绝缘层与分离漂移区和发射极区的体区的一部分相对。 身体区域分为多个身体部分，身体部分分为两组。 一组在主体部分内具有发射极区域，另一组在主体部分内没有发射极区域。 多个第一沟槽形成在不具有发射极区域的主体部分内。 在第一沟槽和沟槽栅电极之间形成p + + / - 接触区。

公开(公告)号：US20080026427A1

公开(公告)日：2008-01-31

申请号：US11861540

申请日：2007-09-26

申请人： STEPHANE BEJANIN ,  Hiroaki Tanaka

发明人： STEPHANE BEJANIN ,  Hiroaki Tanaka

IPC分类号： G01N33/53 ,  A01K67/00 ,  C07H21/00 ,  C07K14/00 ,  C07K16/00 ,  C07K7/06 ,  C07K7/08 ,  C12N1/00 ,  C12N15/63 ,  C12P21/02

CPC分类号： G01N33/50 ,  A61K38/00 ,  C07K14/47 ,  G01N33/5005 ,  G01N33/5008 ,  G01N33/502 ,  G01N33/68 ,  G01N33/6845 ,  G01N2500/00 ,  Y10T436/143333

摘要： The invention concerns GENSET polynucleotides and polypeptides. Such GENSET products may be used as reagents in forensic analyses, as chromosome markers, as tissue/cell/organelle-specific markers, in the production of expression vectors. In addition, they may be used in screening and diagnosis assays for abnormal GENSET expression and/or biological activity and for screening compounds that may be used in the treatment of GENSET-related disorders.

摘要翻译： 本发明涉及GENSET多核苷酸和多肽。 在产生表达载体中，这种GENSET产品可用作法医分析中的试剂，作为染色体标记物，作为组织/细胞/细胞器特异性标志物。 此外，它们可用于异常GENSET表达和/或生物活性的筛选和诊断测定，并用于筛选可用于治疗GENSET相关疾病的化合物。

公开(公告)号：US07287433B2

公开(公告)日：2007-10-30

申请号：US11444302

申请日：2006-06-01

申请人： Hiroaki Tanaka

发明人： Hiroaki Tanaka

IPC分类号： G01L9/06

CPC分类号： G01L19/147 ,  G01L19/0627

摘要： A pressure sensor for detecting a pressure and for outputting a signal based on the piezoresistance effect includes a substrate having a sensor chip on one side in a thin portion and a concave portion on another side, a piezo-resistor in the sensor chip, a pedestal being attached to the substrate and having a through hole for introducing the pressure to the sensor chip and a gel material filled in the concave portion and the through hole for protecting the sensor chip. A ratio of a diameter of the through hole to a thickness of the pedestal is substantially within a range between 1 and 3.

摘要翻译： 用于检测压力并基于压阻效应输出信号的压力传感器包括：具有在薄壁一侧的传感器芯片和另一侧的凹部的基板，传感器芯片中的压电电阻器，基座 附着在基板上，并具有用于将压力引入传感器芯片的通孔和填充在凹部中的凝胶材料和用于保护传感器芯片的通孔。 通孔的直径与基座的厚度的比率基本上在1和3之间的范围内。

公开(公告)号：US07268008B2

公开(公告)日：2007-09-11

申请号：US11325514

申请日：2006-01-05

申请人： Manabu Tomisaka ,  Yoshifumi Watanabe ,  Hiroaki Tanaka

发明人： Manabu Tomisaka ,  Yoshifumi Watanabe ,  Hiroaki Tanaka

IPC分类号： H01L21/00

CPC分类号： G01L9/0042 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00

摘要： A method for manufacturing a pressure sensor includes the steps of: preparing a semiconductor substrate; forming an insulation film on the substrate; forming a first metal film on the insulation film; forming a first protection film on the first metal film and the insulation film; forming a second protection film on the first metal film and the first protection film; performing reduction treatment of adhesive force on the second protection film, the force between the second protection film and a second metal film; forming the second metal film on the first metal film and the first protection film; and removing a part of the second metal film.

摘要翻译： 制造压力传感器的方法包括以下步骤：制备半导体衬底; 在基板上形成绝缘膜; 在绝缘膜上形成第一金属膜; 在第一金属膜和绝缘膜上形成第一保护膜; 在第一金属膜和第一保护膜上形成第二保护膜; 对第二保护膜施加粘合力的还原处理，第二保护膜和第二金属膜之间的力; 在第一金属膜和第一保护膜上形成第二金属膜; 以及去除所述第二金属膜的一部分。

公开(公告)号：US07242065B2

公开(公告)日：2007-07-10

申请号：US11081525

申请日：2005-03-17

申请人： Ichiharu Kondo ,  Hiroaki Tanaka ,  Inao Toyoda ,  Makoto Totani

发明人： Ichiharu Kondo ,  Hiroaki Tanaka ,  Inao Toyoda ,  Makoto Totani

IPC分类号： H01L29/84 ,  G01L9/00

CPC分类号： G01L9/0054 ,  G01L19/148

摘要： A pressure sensor includes a sensor chip and a circuit chip. The sensor chip, which is configured to generate an electrical signal representative of a pressure being sensed, has a surface including a sensing area and a plurality of electrical contact pads disposed on the surface. The circuit chip includes a circuit configured to process the electrical signal and has a surface on which a plurality of electrical contact pads of the circuit chip are disposed. The circuit chip is joined to the sensor chip so that the electrical contact pads of the circuit chip are respectively electrically connected to those of the sensor chip, all the electrical contact pads of the circuit chip and the sensor chip are hermetically sealed and isolated from the fluid, and the surfaces of the circuit chip and the sensor chip face each other with the electrical contact pads of the same interposed therebetween.

摘要翻译： 压力传感器包括传感器芯片和电路芯片。 被配置为产生代表被感测的压力的电信号的传感器芯片具有包括感测区域和设置在表面上的多个电接触焊盘的表面。 电路芯片包括被配置为处理电信号并且具有设置电路芯片的多个电接触焊盘的表面的电路。 电路芯片连接到传感器芯片，使得电路芯片的电接触焊盘分别电连接到传感器芯片的电接触焊盘，电路芯片和传感器芯片的所有电接触焊盘都被密封和隔离 流体，并且电路芯片和传感器芯片的表面彼此面对，并且其间具有相同的电接触焊盘。

公开(公告)号：US07223727B2

公开(公告)日：2007-05-29

申请号：US10467554

申请日：2002-02-07

申请人： Barbara Chicca ,  John Chicca ,  Blake Denison ,  Frances Yen-Potin ,  Bernard Bihain ,  Stephane Bejanin ,  Hiroaki Tanaka ,  Severin Jobert ,  Jean-Yves Giordano ,  Jean-Baptiste Dumas Milne Edwards

发明人： Barbara Chicca ,  John Chicca ,  Blake Denison ,  Frances Yen-Potin ,  Bernard Bihain ,  Stephane Bejanin ,  Hiroaki Tanaka ,  Severin Jobert ,  Jean-Yves Giordano ,  Jean-Baptiste Dumas Milne Edwards

IPC分类号： A61K38/00

CPC分类号： C07K14/5759 ,  A61K38/00 ,  C07K14/775 ,  Y10S514/909

摘要： The present invention relates to the field of metabolic research. Metabolic disorders, such as obesity, are a public health problem that is serious and widespread. GSSP4 polypeptides have been identified that are believed to be beneficial in the treatment of metabolic disorders. These compounds should be effective for reducing cholesterol levels, body mass, body fat, and for treating metabolic-related diseases and disorders. The metabolic-related diseases or disorders include, but are not limited to, obesity, hyperlipidemia, hypercholesterolemia, atherosclerosis, diabetes, glucose intolerance, insulin resistance and hypertension.

摘要翻译： 本发明涉及代谢研究领域。 代谢紊乱，如肥胖，是一个严重而广泛的公共卫生问题。 已经鉴定出GSSP4多肽被认为在治疗代谢紊乱中是有益的。 这些化合物应有效降低胆固醇水平，体重，体脂肪，以及治疗与代谢有关的疾病和病症。 与代谢相关的疾病或病症包括但不限于肥胖症，高脂血症，高胆固醇血症，动脉粥样硬化，糖尿病，葡萄糖不耐症，胰岛素抵抗和高血压。