摘要:
According to one embodiment, a control unit multiple-selects a first line for every N lines from a plurality of first lines. N is an integer greater than or equal to one. The control unit sets the multiple-selected first lines to a selection potential, and fixes potentials of non-selected first lines at least adjacent to the multiple-selected first lines at a first timing. The control unit causes the multiple-selected first lines to be in a floating state at a second timing after the first timing. The control unit selects one second line from the plurality of second lines and sets the one second line to a forming potential at a third timing after the second timing.
摘要:
In an IC tag, when a semiconductor integrated circuit device is activated, an operation control unit sets existence/nonexistence of a communication distance limitation for reducing a communication distance to a state management unit. If the communication distance limitation is not set, a switch unit is turned ON and a demodulated command is inputted from a command demodulation circuit to a command decode unit. If the communication distance limitation is set, a power intensity monitor unit judges whether the power of a rectification circuit is greater than or equal to a predetermined arbitrary field intensity. If the power is less than the predetermined arbitrary field intensity, the switch unit is turned OFF and various commands demodulated by the command demodulation circuit are not inputted to the command decode unit. As a result, the semiconductor integrated circuit device does not operate.
摘要:
A resistance change type memory of an aspect of the present invention including a first wiring configured to extend in a first direction, a second wiring configured to extend in a second direction crossing the first direction, a series circuit configured to connect to the first and second wirings, the series circuit including a non-ohmic element being more conductive in the first to second wiring direction than in the second to first direction and a resistance change type storage element in which data is stored according to a change of a resistance state, an energy supplying circuit configured to connect to the first wiring to supply energy to the first wiring, the energy being used to store the data in the resistance change type storage element, and a capacitance circuit configured to include a capacitive element and being connected to the second wiring.
摘要:
A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).
摘要:
A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).
摘要:
There is provided an optical recording medium comprising a recording layer containing a charge-generating material capable of generating a first electric charge and a second electric charge by beam irradiation, the second electric charge having a different polarity from that of the first electric charge, a charge-transport material enabling at least the first electric charge to be transported to isolate the first electric charge and the second electric charge, and a trapping material retaining the first electric charge. The optical characteristics of the recording layer is changed in accordance with changes in spatial distribution of the first and second electric charges, and the trapping material is provided with a conjugated system and with at least one nitrogen-containing heterocyclic group, and bonded through an unsaturated carbon atom of the heterocyclic group to the conjugated system.
摘要:
A hologram recording medium includes: first and second translucent substrates; and a recording layer, which is formed between the first and second substrates, contains a three-dimensionally crosslinked polymer matrix, a radical polymerizable compound and a photoradical polymerization initiator, shows a rubber-like elasticity at the room temperature, and has a durometer hardness within a range of A45 to A85.
摘要:
The optical information recording apparatus includes a laser light source for radiating a light beam, a spatial light modulator disposed on an optical path of the light beam, a power density control mechanism disposed on the optical path, an interference fringe formation mechanism. The spatial light modulator has pixels arranged in a two-dimensional array at which a central section of the light beam is radiated. The spatial light modulator spatially modulates the light beam. The power density control mechanism is set such that the transmittance with respect to the light beam at a portion where the central section is radiated is lower than that at which a peripheral section of the light beam is radiated. The interference fringe formation mechanism forms interference fringes from the central section and the peripheral section on the optical information recording medium disposed downstream on the optical path.
摘要:
Disclosed is a holographic optical recording medium, comprising a recording layer containing a three dimensionally cross-linked polymer matrix, a radically polymerizable compound, and a photo radical polymerization initiator, the three dimensionally cross-linked polymer matrix comprising a cured material of a reaction product between a diglycidyl ether and an amine, the diglycidyl ether being selected from the group consisting of 1,6-hexanediol diglycidyl ether and diethylene glycol diglycidyl ether.
摘要:
Disclosed is a holographic optical recording medium comprising a recording layer having a skeleton structure represented by following general formula (A): where R1 denotes an atomic group selected from the group consisting of a linear or branched alkylene group having 1 to 10 carbon atoms and an arylene group having 1 to 10 carbon atoms, it being possible for a halogen atom or an alkoxy group to be substituted in R1, and each of p and q is 0 or 1.