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    ELECTRO-OPTIC MODULATOR WITH MONOCRYSTALLINE SEMICONDUCTOR WAVEGUIDES
    102.
    发明申请
    ELECTRO-OPTIC MODULATOR WITH MONOCRYSTALLINE SEMICONDUCTOR WAVEGUIDES 审中-公开

    公开(公告)号：US20200158949A1

    公开(公告)日：2020-05-21

    申请号：US16198251

    申请日：2018-11-21

    申请人： Cisco Technology, Inc.

    发明人： Xunyuan ZHANG ,  Vipulkumar K. PATEL ,  Prakash B. GOTHOSKAR

    IPC分类号： G02B6/122 ,  G02B6/136

    摘要： A method of fabricating an optical apparatus comprises forming a first waveguide on a dielectric substrate. The first waveguide extends in a direction of an optical path. The first waveguide comprises a monocrystalline semiconductor material and is doped with a first conductivity type. The method further comprises depositing a first dielectric layer on the first waveguide, etching a first opening that extends at least partly through the first dielectric layer, and forming a second waveguide at least partly overlapping the first waveguide along the direction. The second waveguide is doped with a different, second conductivity type. Forming the second waveguide comprises depositing a monocrystalline semiconductor material on the first dielectric layer, whereby the first opening is filled with the deposited monocrystalline semiconductor material.

    POROUS WAVEGUIDE SENSORS FEATURING HIGH CONFINEMENT FACTORS AND METHOD FOR MAKING THE SAME
    103.
    发明申请
    POROUS WAVEGUIDE SENSORS FEATURING HIGH CONFINEMENT FACTORS AND METHOD FOR MAKING THE SAME 审中-公开

    公开(公告)号：US20200158650A1

    公开(公告)日：2020-05-21

    申请号：US16561093

    申请日：2019-09-05

    申请人： CLEMSON UNIVERSITY

    发明人： Judson Ryckman ,  Gabriel Allen ,  William Frederick Delaney ,  Tahmid Talukdar

    IPC分类号： G01N21/77 ,  G02B6/122 ,  G02B6/136

    摘要： Devices and methods of providing a high-performance optical sensor disclose a sensor comprised of a porous material designed to have a multilayer rib-type or multilayer pillar-type waveguide geometry. The resulting porous nanomaterial multilayer-rib or multilayer-pillar waveguide design is optically capable of achieving ˜100% confinement factor while maintaining small mode area and single-mode character. Fabrication of the device is enabled by an inverse processing technique, wherein silicon wafers are first patterned and etched through well-established techniques, which allows porous nanomaterial synthesis (i.e., porous silicon anodization) either at the wafer-scale or at the chip-scale after wafer dicing. While ˜100% is an optimal target, typical devices per presently disclosed subject matter may operate with ˜98-99+%, while allowing for some design adjustments to be made if necessary, and still maintaining high sensitivity. i.e., >85-90% confinement suitable in some applications. In those instances, a primary benefit would still be use of the presently disclosed fabrication technology.

    Electro-optical modulator using waveguides with overlapping ridges
    104.
    发明授权
    Electro-optical modulator using waveguides with overlapping ridges 有权

    公开(公告)号：US10598967B2

    公开(公告)日：2020-03-24

    申请号：US15615290

    申请日：2017-06-06

    申请人： Cisco Technology, Inc.

    发明人： Donald Adams ,  Prakash B. Gothoskar ,  Vipulkumar Patel ,  Mark Webster

    IPC分类号： G02F1/25 ,  G02B6/13 ,  G02F1/025 ,  G02F1/01 ,  G02B6/132 ,  G02B6/136 ,  G02F1/225 ,  G02F1/015

    摘要： An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

    III-V CHIP PREPARATION AND INTEGRATION IN SILICON PHOTONICS
    105.
    发明申请
    III-V CHIP PREPARATION AND INTEGRATION IN SILICON PHOTONICS 审中-公开

    公开(公告)号：US20200083662A1

    公开(公告)日：2020-03-12

    申请号：US16389089

    申请日：2019-04-19

    申请人： Skorpios Technologies, Inc.

    发明人： Damien Lambert

    IPC分类号： H01S5/022 ,  G02B6/136 ,  G02B6/122 ,  H01L23/00 ,  G02B6/42

    摘要： A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

    Optical waveguide, fabrication methods, and applications
    107.
    发明授权
    Optical waveguide, fabrication methods, and applications 有权

    公开(公告)号：US10585241B2

    公开(公告)日：2020-03-10

    申请号：US16064537

    申请日：2016-12-20

    申请人： UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

    发明人： Sasan Fathpour ,  Jeffrey Chiles

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/136

    摘要： The present invention is an integrated photonics platform is created through the application of a polymer and silicon dioxide mask, multiple anisotropic etchings with inductively-coupled plasma reactive-ion-etching and a brief isotropic silicon etching to produce a a T-shaped silicon base wafer. A silicon-on-insulator donor wafer is bonded to the silicon base wafer a silicon dioxide layer between the two wafers is removed, producing a finalized T-shaped optical waveguide. The T-shaped optical waveguide causes confinement of the optical mode in the upper region of the “T,” above the connection to the post. This shape prevents leakage of light into the silicon wafer.

    Edge construction on optical devices
    110.
    发明授权
    Edge construction on optical devices 有权

    公开(公告)号：US10539815B2

    公开(公告)日：2020-01-21

    申请号：US15806272

    申请日：2017-11-07

    申请人： Mellanox Technologies Silicon Photonics Inc.

    发明人： Wei Qian ,  Monish Sharma

    IPC分类号： G02F1/125 ,  G02B6/293 ,  G02F1/01 ,  G02B6/24 ,  G02B6/36 ,  G02B6/122 ,  G02B6/42 ,  G02B6/136 ,  G02B6/30 ,  G02B6/12

    摘要： A method of forming an optical device includes forming a waveguide mask on a device precursor. The device precursor includes a waveguide positioned on a base. The method also includes forming a facet mask on the device precursor such that at least a portion of the waveguide mask is between the facet mask and the base. The method also includes removing a portion of the base while the facet mask protects a facet of the waveguide. The portion of the base that is removed can be removed such that a recess is defined in the base and/or a shelf is defined on the device precursor. A light source such as an optical fiber or laser can be received in the recess and/or positioned over the shelf such that the light source is optically aligned with the facet of the waveguide.