摘要:
A method is provided for performing a self-test on a memory device in a test mode, where the memory device includes a universal flash storage (UFS) link layer and a UFS physical layer having a transmitting unit and a receiving unit. The method includes generating a first signal; sending the first signal from a test unit through the UFS link layer to the transmitting unit in the UFS physical layer to be transmitted to the receiving unit; receiving a second signal at the test unit from the receiving unit in the UFS physical layer through the UFS link layer, the second signal being the first signal received by the receiving unit; and testing an operation performed by at least one of the UFS physical layer and the UFS link layer based on the first signal and the second signal.
摘要:
Disclosed is a solid state drive tester which divides the functions of generating and comparing test pattern data and Frame Information Structure (FIS) data with each other into each other to implement the functions as separate logics, so that entire test time is decreased by reducing load of a processor. The solid state drive tester includes a host terminal for receiving a test condition for testing a storage from a user, and a test control unit creating a test pattern corresponding to the test condition, and adaptively selecting an interface according to an interface type of the storage to be tested to test the storage using the test pattern, wherein the test control unit is divided into a control module for controlling the test of the storage and a test execution module for practically executing the test in hardware to test a plurality of storages in real time.
摘要:
A RAM to be diagnosed is divided into n (n being an integer of 3 or greater) pieces of base regions. In an idle time of periodic processing performed in a system in which the RAM is incorporated, two base regions are selected from the divided base regions, and the selected two base regions are diagnosed using a diagnostic method capable of detecting a coupling fault. Thereafter, in an idle time of the periodic processing, operations to select an unselected pair of base regions and diagnose the selected pair are repeated, so as to diagnose all combinations of pairs.
摘要:
A programmable characterization-debug-test engine (PCDTE) on an integrated circuit chip. The PCDTE includes an instruction memory that receives and stores instructions provided on a chip interface, and a configuration memory that receives and stores configuration values provided on the chip interface. The PCDTE also includes a controller that configures a plurality of address counters and data registers in response to the configuration values. The controller also executes the instructions, wherein read/write addresses and write data are retrieved from the counters in response to the instructions. The retrieved read/write addresses and write data are used to access a memory under test. Multiple ports of the memory under test may be simultaneously accessed. Multiple instructions may be linked. The instructions may specify special counting functions within the counters and/or specify integrated (linked) counters. The PCDTE may transmit information off of the chip to exercise transmit/receive circuitry of the chip.
摘要:
A test apparatus and method for testing a server are provided. The server includes a CPU group and a memory module. The test apparatus is electrically coupled to the CPU group and the memory module. The CPU group includes a number of CPUs, where each CPU is coupled to other CPUs through a plurality of QPI buses. The test apparatus includes a first copying control unit, a second copying control unit and a calculation unit. The first copying control unit controls each CPU to copy data stored in the memory module to a cache of the CPU and records the copying time duration. The second copying control unit controls each CPU to copy data stored in the memory module to caches of other CPUs and records the copying time duration. The calculation unit obtains copying speed according to the copying time duration.
摘要:
Method for testing a memory under test (1) including a plurality of memory cells and a Memory Built-In Self-Test Engine (2) connectable to a memory under test. The MBIST engine (2) is arranged to generate appropriate addressing and read and/or write operations to the memory under test (1). The MBIST engine (2) is connected to a March Element Stress register (MESR) (3), a generic march element register (GMER) (4), and a Command Memory (5). The GMER (4) specifies one of a set of Generic March Elements (GME), and the MESR (3) specifies the stress conditions to be applied. Only a few GMEs are required in order to specify most industrial algorithms. The architecture is orthogonal and modular, and all speed related information is contained in the GME. In addition, only little memory is required for the specification of the test, providing a low implementation cost, yet with a high flexibility.
摘要:
Apparatus and methods are provided for concurrently selecting multiple arrays of memory cells when accessing a memory element. A memory element includes a first array of one or more memory cells coupled to a first bit line node, a second array of one or more memory cells coupled to a second bit line node, access circuitry for accessing a first memory cell in the first array, a first transistor coupled between the first bit line node and the access circuitry, and a second transistor coupled between the second bit line node and the access circuitry. A controller is coupled to the first transistor and the second transistor, and the controller is configured to concurrently activate the first transistor and the second transistor to access the first memory cell in the first array.
摘要:
Provided is a test apparatus including: an address generator that generates an address of a memory under test; a selector that selects whether to perform bit inversion on the address generated by the address generator before supplying the address to the memory under test; an inversion processing section that outputs the address generated by the address generator after performing bit inversion on the address if the selector has selected in the affirmative, and outputs the address generated by the address generator without performing any bit inversion on the address if the selector has selected in the negative; and a supply section that supplies, to the memory under test, the address having undergone inversion control outputted from the inversion processing section and an inversion cycle signal that indicates whether the address outputted from the inversion processing section is bit inverted or not.
摘要:
A test method for a memory having first and second cell arrays, first compressed data obtained by compressing output data of the first cell array and output data of the second cell array is outputted. When the first compressed data represents that a fail exists, output data of one of the first and second cell arrays is locked as normal data, and second compressed data obtained by compressing the normal data and output data of the other of the first and second cell arrays is outputted.
摘要:
A resistive memory device and a system and method for testing the resistive memory device are provided. The resistive memory device includes a plurality of bit lines comprising at least one dummy bit line to which a plurality of resistive memory cells are connected, a conducting wire connected to the dummy bit line, a first switching element positioned between the dummy bit line and an external device outside the resistive memory device, and a second switching element positioned between the conducting wire and the external device. Accordingly, the operational reliability of the resistive memory device may be increased.