Abstract:
A device and method for layout and fabrication of power supply bus lines in an integrated circuit such as a memory circuit are described. In accordance with the present invention, power bus lines and bonding pads of the circuit are not necessarily formed in both edge regions and center regions of the device. The bonding pads are formed in the region according to the package being used, and the power bus lines are formed in the other region. This is accomplished by forming the bonding pads over landing pads. Landing pads are formed in both the center region and the edge region under the top surface of the device. If the device is to be packaged in an edge pad configuration, the bonding pads are formed over the landing pads in the edge region, and power supply bus lines can be formed over the landing pads in the center region. Similarly, if the device is to be packaged in a center pad configuration, the bonding pads are formed over the landing pads in the center region, and the power supply bus lines can be formed over the landing pads in the edge region.
Abstract:
The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): Y=Y0+A·e−(x1−1)/T1+B·(1−e−x2/T2) (I) wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x1 is the thickness (μm) of a gallium nitride layer, x2 is the thickness (mm) of a sapphire substrate, Y0 is −107±2.5, A is 24.13±0.50, B is 141±4.5, T1 is 0.56±0.04, and T2 is 0.265±0.5.
Abstract translation:本发明涉及一种氮化镓/蓝宝石薄膜,其曲率半径位于从以下函数式(I)绘制的曲线的右侧:<?in-line-formula description =“In-line 公式“end =”lead“?> Y = Y0 + Ae-(x 1)/ T + B。(1-ex / sub2> / T 2 sub2>)(I)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中Y是a的曲率半径 氮化镓/蓝宝石薄膜,x1是氮化镓层的厚度(mum),x2是蓝宝石衬底的厚度(mm),Y0为-107±2.5,A为24.13±0.50,B为141±4.5 ,T1为0.56±0.04,T2为0.265±0.5。
Abstract:
An organic light emitting device is provided that includes: an anode including an anode material and for injecting holes; an organic layer including a light emitting layer on the anode; and a cathode on the organic layer and through which light emitted from the light emitting layer passes, wherein the cathode includes: a buffer layer, a metal oxide layer including a metal oxide, and a metal layer including a metal having an absolute work function value lower than an absolute work function value of the anode material and coupled to the buffer layer and the metal oxide layer.
Abstract:
Example embodiments of the invention may provide for active baluns. An example active balun may include a resonator that may convert a single-ended input signal to at least two differential input signals, and a differential switching block that includes first and second transistors that each receive a respective one of the at least two differential input signals from the resonator, where the first and second transistors may be cross-coupled to each other to provide a first differential output signal and a second differential output signal. An example active balun may further include one or more loads connected to the first and second differential output signals, and one or more stacked inverters that may provide a first output port and a second output port, where the first output port may be responsive to the first differential output signal and the second output port may be responsive to the second differential output signal.
Abstract:
The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): Y=Y0+A·e−(x1−1)/T1+B·(1−e−x2/T2) (I) wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x1 is the thickness (μm) of a gallium nitride layer, x2 is the thickness (mm) of a sapphire substrate, Y0 is −107±2.5, A is 24.13±0.50, B is 141±4.5, T1 is 0.56±0.04, and T2 is 0.265±0.5.
Abstract:
An organic light-emitting device including a transparent conducting oxide layer as a cathode and a method of manufacturing the organic light-emitting device. The organic light-emitting device includes an anode disposed on a substrate. An organic functional layer including at least an organic light-emitting layer is disposed on the anode. The transparent conducting oxide layer used as the cathode is disposed on the organic functional layer. The transparent conducting oxide layer cathode is formed by plasma-assisted thermal evaporation. A microcavity structure is not formed in the organic light-emitting device, thereby avoiding a luminance change and a color shift as a function of viewing angle.
Abstract:
A multipath accessible semiconductor memory device provides an interface function between processors. The memory device may include a memory cell array having a shared memory area operationally coupled to two or more ports that are independently accessible by two or more processors, an access path forming unit to form a data access path between one of the ports and the shared memory area in response to external signals applied by the processors, and an interface unit having a semaphore area and mailbox areas accessible in the shared memory area by the two or more processors to provide an interface function for communication between the two or more processors.
Abstract:
A connector includes a cap detachably coupled to a plug in a coupling direction. The cap and the plug electrically connect a current there between. A lever is coupled to the plug. The lever is moveable linearly in a direction the same as the coupling direction. A coupling is actuated by the linear movement of the lever. The coupling draws and compulsorily presses the cap into the plug in the coupling direction to couple the cap and the plug.
Abstract:
Embodiments of the invention may provide for digital wavelet generators utilized in providing flexible spectrum-sensing resolutions for a Multi-Resolution Spectrum Sensing (MRSS) technique. Embodiments of the invention may provide for either multi-point or multi-rate digital wavelet generators. These digital wavelet generators may utilizing the same hardware resource optimally, and the various wavelet bases may be generated by changing the memory addressing schemes or clock speeds.
Abstract:
A liquid crystal display device includes a liquid crystal display panel, a plurality of lamps for irradiating light onto the liquid crystal display panel, a cover bottom that houses the plurality of lamps, an inverter printed circuit board having a first surface and a second surface opposite to the first surface with an insulation base layer between the first and second surfaces, wherein the second surface is adjacent to the cover bottom, a transformer on the first surface of the inverter printed circuit board, and a metal shielding pattern on the second surface of the inverter printed circuit board directly between the transformer and the cover bottom.