Flat type color cathode ray tube
    113.
    发明授权
    Flat type color cathode ray tube 失效
    平面型彩色阴极射线管

    公开(公告)号:US06348758B1

    公开(公告)日:2002-02-19

    申请号:US09709730

    申请日:2000-11-13

    CPC classification number: H01J29/327 H01J29/07 H01J2229/075

    Abstract: A flat type color cathode ray tube (CRT) includes a bulb consisting of a flat type panel where a fluorescent film on which inner surface a fluorescent pattern and black matrix are coated is formed, and a funnel extended from the panel, and a frame assembly having a flat type shadow mask installed adjacent to the panel in the bulb and having a plurality of strips for forming a plurality of slits and a tie bar for connecting neighboring strips, wherein a vertical pitch of the black matrix formed on the fluorescent film is less than or equal to a vertical pitch of the tie bar of the flat type shadow mask.

    Abstract translation: 扁平型彩色阴极射线管(CRT)包括一个由扁平型面板组成的灯泡,其中形成有内表面上具有荧光图案和黑矩阵的荧光膜,以及从面板延伸的漏斗和框架组件 具有安装在灯泡中的面板附近的平面型荫罩,并具有用于形成多个狭缝的多个条带和用于连接相邻条带的连接条,其中形成在荧光膜上的黑矩阵的垂直间距较小 大于或等于平面型荫罩的连接杆的垂直间距。

    Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive lines
    114.
    发明授权
    Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive lines 有权
    使用掩模层形成集成电路存储器件以抑制杂质区和导电线的过蚀刻的方法

    公开(公告)号:US06326270B1

    公开(公告)日:2001-12-04

    申请号:US09419836

    申请日:1999-10-15

    Abstract: Methods of forming integrated circuit memory devices may include steps to form memory cell access transistors therein. These steps may include steps to form a gate line on a semiconductor substrate and then implant dopants of first conductivity type into the semiconductor substrate to define a self-aligned impurity region therein. A spacer layer of a first material is then formed on a sidewall and upper surface of the gate line. An interlayer insulating layer of a second material is then formed on the spacer layer. A series of selective etching steps are then performed using different etchants. For example, a step is performed to selectively etch the interlayer insulating layer to define a contact hole therein, using the spacer layer as an etching mask to protect the gate line from etching damage. A selective etching step is then performed to convert the spacer layer into a sidewall spacer on the sidewall of the gate line. This etching step is performed using the interlayer insulating layer as an etching mask. A conductive plug (e.g., bit line plug) is then formed in the contact hole. This conductive plug forms an ohmic contact with the impurity region.

    Abstract translation: 形成集成电路存储器件的方法可以包括在其中形成存储单元存取晶体管的步骤。 这些步骤可以包括在半导体衬底上形成栅极线,然后将第一导电类型的掺杂剂注入到半导体衬底中以限定其中的自对准杂质区的步骤。 然后在栅极线的侧壁和上表面上形成第一材料的间隔层。 然后在间隔层上形成第二材料的层间绝缘层。 然后使用不同的蚀刻剂执行一系列选择性蚀刻步骤。 例如,使用间隔层作为蚀刻掩模来执行步骤以选择性地蚀刻层间绝缘层以限定其中的接触孔,以保护栅极线免受蚀刻损伤。 然后执行选择性蚀刻步骤以将间隔层转换成栅极线的侧壁上的侧壁间隔物。 该蚀刻步骤使用层间绝缘层作为蚀刻掩模进行。 然后在接触孔中形成导电插塞(例如,位线插头)。 该导电插塞与杂质区形成欧姆接触。

    Single-electron memory device using an electron-hole coulomb blockade
    115.
    发明授权
    Single-electron memory device using an electron-hole coulomb blockade 失效
    使用电子孔库仑封锁的单电子存储器件

    公开(公告)号:US06323504B1

    公开(公告)日:2001-11-27

    申请号:US09495740

    申请日:2000-02-01

    CPC classification number: B82Y10/00 G11C2216/08 H01L29/7888 Y10S977/937

    Abstract: A single-electron memory device using the electron-hole Coulomb blockade is provided. A single-electron memory device in accordance with an embodiment of the present invention includes a plurality of quantum dot tunnel-junction arrays, a gate electrode, and source and drain electrodes. The plurality of quantum dot tunnel-junction arrays include at least two tunnel-junctions, are parallelly coupled to each other, and are well separated from each other to prevent single-electron tunneling between them. One of the plurality of quantum dot tunnel-junction arrays includes the gate electrode, and the voltage applied to the gate electrode can vary the number of electron-hole pairs. Each of the above-mentioned plurality of quantum dot tunnel-junction arrays includes separate source and drain electrodes where voltages are applied

    Abstract translation: 提供了使用电子孔库仑封锁的单电子存储器件。 根据本发明的实施例的单电子存储器件包括多个量子点隧道结阵列,栅电极和源电极和漏电极。 多个量子点隧道结阵列包括至少两个隧道结,它们彼此平行地耦合,并且彼此相互分离以防止它们之间的单电子隧穿。 多个量子点隧道结阵列中的一个包括栅电极,并且施加到栅电极的电压可以改变电子 - 空穴对的数量。 上述多个量子点隧道结阵列中的每一个包括分别施加电压的源极和漏极

    Temperature-adaptive capacitor block and temperature-compensated crystal oscillator using it
    117.
    发明授权
    Temperature-adaptive capacitor block and temperature-compensated crystal oscillator using it 失效
    使用温度自适应电容器块和温度补偿晶体振荡器

    公开(公告)号:US06281761B1

    公开(公告)日:2001-08-28

    申请号:US09570484

    申请日:2000-05-12

    CPC classification number: H01L27/0629 H03J2200/10 H03L1/026

    Abstract: A temperature-adaptive capacitor array used in a TCXO so that the TCXO effectively conducts temperature-compensating in the resonant frequency without the non-monotonicity while a smaller silicon area is used in producing the capacitor array. A number of capacitor arrays allocated in two capacitor banks. Each of the capacitor arrays comprises two or more unit cells, and in turn each unit cell consists of a unit capacitor and a switching element, respectively. All of unit capacitors included in the capacitor arrays are connected each other through a decoder assembly to provide a crystal oscillator with a load capacitance. The unit capacitors belonging to one of the capacitor arrays have the same capacitance with each other. Two unit capacitors belonging to different capacitor arrays, however, have different capacitances from each other. The capacitance of the unit capacitors belonging to each capacitor array is set in consideration of control preciseness required in compensating a frequency deviation in the resonant frequency of the crystal oscillator as the temperature varies in at least a portion of a practical temperature range, within which the crystal oscillator operates.

    Abstract translation: 在TCXO中使用的温度自适应电容器阵列,使得TCXO在不产生非单调性的同时有效地进行谐振频率的温度补偿,而在制造电容器阵列时使用较小的硅面积。 分配在两个电容器组中的多个电容器阵列。 每个电容器阵列包括两个或更多个单元电池,并且依次分别由单位电容器和开关元件组成。 包括在电容器阵列中的所有单位电容器通过解码器组件彼此连接,以提供具有负载电容的晶体振荡器。 属于电容器阵列之一的单位电容器具有彼此相同的电容。 然而,属于不同电容器阵列的两个单位电容器具有彼此不同的电容。 考虑到在实际温度范围的至少一部分温度变化时补偿晶体振荡器的谐振频率的频率偏差所需的控制精度来设定属于每个电容器阵列的单位电容器的电容,其中 晶振操作。

    Apparatus for cleaning transfer roller and optical photoreceptor of printing device
    118.
    发明授权
    Apparatus for cleaning transfer roller and optical photoreceptor of printing device 有权
    用于清洁印刷装置的转印辊和光学感光体的装置

    公开(公告)号:US06263176B1

    公开(公告)日:2001-07-17

    申请号:US09492326

    申请日:2000-01-27

    CPC classification number: G03G15/161

    Abstract: An apparatus for cleaning a transfer roller and an optical photoreceptor cleans the transfer roller for transferring a toner image formed on the optical photoreceptor of a printing device to a recording paper, and includes a cleaning roller installed to closely contact an outer circumferential surface of the transfer roller and to be rotatable; a heat source installed in the cleaning roller for heating an outer circumferential surface of the cleaning roller; and a cleaning roller moving mechanism which causes the cleaning roller either to contact or be separated from the outer circumferential surface of the transfer roller. In addition, the apparatus further includes a waste ink mechanism which removes waste ink on the outer circumferential surface of the cleaning roller, and a discharge mechanism which discharges the removed waste ink. Therefore, after waste ink remaining on the optical photoreceptor is transferred to the transfer roller, the waste ink remaining on the outer circumferential surface of the cleaning roller can be removed, and the waste ink moving and adhering to the outer circumferential surface of the cleaning roller can be removed.

    Abstract translation: 用于清洁转印辊和光学感光器的装置清洁转印辊,用于将形成在打印装置的光学感光体上的调色剂图像转印到记录纸上,并且包括安装成紧密接触转印件的外周表面的清洁辊 滚筒和可转动; 安装在所述清洁辊中的用于加热所述清洁辊的外周面的热源; 以及使清洁辊与转印辊的外周面接触或分离的清洁辊移动机构。 此外,该设备还包括废墨机构,其去除清洁辊的外圆周表面上的废墨,以及排出所排出的废墨的排出机构。 因此,残留在光学感光体上的废墨被转印到转印辊上后,残留在清洁辊的外周面上的废墨可以被去除,并且废墨移动并附着到清洁辊的外圆周表面 可以删除

    Process for preparing random copolymer functionalized at both terminals
    119.
    发明授权
    Process for preparing random copolymer functionalized at both terminals 有权
    制备在两个末端官能化的无规共聚物的方法

    公开(公告)号:US06221975B1

    公开(公告)日:2001-04-24

    申请号:US09377305

    申请日:1999-08-19

    CPC classification number: C08F8/32

    Abstract: This invention relates to a polymer having functional groups at both terminals comprising the steps of: preparing a difunctional initiator by recating divinyl aromatic material and an organo-lithium compound in the presence of a hydrocarbon solvent; synthesizing a random copolymer derived from an aromatic vinyl and conjugated diene monomer at only one terminal of two anionic terminals; adding a polar additive to activate both terminals of said copolymer, followed by the addition of an electrophilic material. The polymer material, so prepared, has an excellent combination of properties such as improved rolling resistance for use in making tire rubber treads, since it can enhance the polymer-filler interaction.

    Abstract translation: 本发明涉及在两端具有官能团的聚合物,其包括以下步骤:通过在烃溶剂存在下重新提取二乙烯基芳族物质和有机锂化合物来制备双官能引发剂; 合成来自芳族乙烯基和共轭二烯单体的无规共聚物仅在两个阴离子末端的一个末端; 加入极性添加剂以活化所述共聚物的两个末端,然后加入亲电材料。 如此制备的聚合物材料具有优异的性能组合,例如用于制造轮胎橡胶胎面的改善的滚动阻力,因为它可以增强聚合物 - 填料相互作用。

    Apparatus and method for full period compensation in an optical disk reader
    120.
    发明授权
    Apparatus and method for full period compensation in an optical disk reader 失效
    光盘阅读器全周期补偿的装置和方法

    公开(公告)号:US06169717A

    公开(公告)日:2001-01-02

    申请号:US09119087

    申请日:1998-07-20

    CPC classification number: G11B20/10009 G11B20/18

    Abstract: An optical disk reading apparatus and method compensate for errors in the full period of an EFM signal. An RF amplifier converts an optical signal reflected from an optical disk into an analog electrical signal. A signal converter converts the analog signal into a digital signal which is modulated to provide an EFM signal. A full period compensating portion compensates for full period errors in the EFM signal and outputs the error compensated EFM signal. An error correcting portion corrects the errors of the compensated EFM signal using an error correction code. Image quality is improved by removing the full period errors.

    Abstract translation: 一种光盘读取装置和方法补偿EFM信号的整个周期中的错误。 RF放大器将从光盘反射的光信号转换为模拟电信号。 信号转换器将模拟信号转换成被调制以提供EFM信号的数字信号。 全周期补偿部分补偿EFM信号中的全周期误差,并输出误差补偿的EFM信号。 误差校正部分使用纠错码校正补偿的EFM信号的误差。 通过删除全部周期错误来改善图像质量。

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