公开(公告)号：US20070126680A1

公开(公告)日：2007-06-07

申请号：US11560562

申请日：2006-11-16

Applicant: Min-Koo HAN ,  Jae-hoon LEE

Inventor： Min-Koo HAN ,  Jae-hoon LEE

IPC: G09G3/36

CPC classification number: G09G3/3233 ,  G09G3/325 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2310/0262 ,  G09G2310/06 ,  G09G2320/043

Abstract: A display device for compensating for degradation of a threshold voltage of a driving thin-film transistor (“TFT”) and method for driving the display device includes a light-emitting element, wherein the light-emitting element emits light by a driving current applied thereto, a driving TFT controlling the magnitude of the driving current directed to the light-emitting element, a capacitor which charges a voltage which varies depending on a data voltage and a threshold voltage of the driving TFT and maintains a voltage corresponding to a difference between the data voltage and a gate voltage of the driving TFT, a first switching unit supplying the data voltage to the capacitor in response to a scan signal, and a second switching unit which is diode-connected and supplies the driving TFT with a light emitting signal.

Abstract translation: 用于补偿驱动薄膜晶体管（“TFT”）的阈值电压劣化的显示装置和驱动显示装置的方法包括发光元件，其中发光元件通过施加的驱动电流发光 控制针对发光元件的驱动电流的大小的驱动TFT，对根据数据电压和驱动TFT的阈值电压而变化的电压进行充电的电容器，并保持对应于 驱动TFT的数据电压和栅极电压，响应于扫描信号将数据电压提供给电容器的第一开关单元和二极管连接的第二开关单元，并向驱动TFT提供发光信号 。

公开(公告)号：US07135294B2

公开(公告)日：2006-11-14

申请号：US10658169

申请日：2003-09-09

Applicant: Jae-hoon Lee ,  Jae-chang Lee ,  Dae-sung Yoon ,  Geun-bae Lim

Inventor： Jae-hoon Lee ,  Jae-chang Lee ,  Dae-sung Yoon ,  Geun-bae Lim

IPC: C12Q1/68 ,  C12P19/34 ,  G01R27/26

CPC classification number: C12Q1/6825 ,  C12Q1/686 ,  G01N27/221 ,  C12Q2565/607 ,  C12Q2561/113 ,  C12Q2531/113

Abstract: A method for detecting a polymerase chain reaction (PCR) product is provided. The method includes (a) providing at least a pair of electrodes in a PCR solution-containing vessel; (b) performing PCR; (c) producing an electric field between the electrodes; and (d) measuring a change in a dielectric property in the PCR solution. Therefore, a PCR product can be detected in real time.

Abstract translation: 提供了一种检测聚合酶链反应（PCR）产物的方法。 该方法包括（a）在含有PCR溶液的容器中提供至少一对电极; （b）进行PCR; （c）在电极之间产生电场; 和（d）测量PCR溶液中介电性质的变化。 因此，可以实时检测PCR产物。

公开(公告)号：US20060145989A1

公开(公告)日：2006-07-06

申请号：US11351134

申请日：2006-02-09

Applicant: Min-Koo Han ,  Jae-Hoon Lee ,  Woo-Jin Nam

Inventor： Min-Koo Han ,  Jae-Hoon Lee ,  Woo-Jin Nam

IPC: G09G3/36

CPC classification number: G09G3/3241 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0224 ,  G09G2320/0252 ,  G09G2320/043

Abstract: The present invention provides a novel structure of picture elements in current programming-type semiconductor devices, and in particular, the structure of picture elements of an active matrix organic light emitting diode (OLED) display. The device makes a self-compensation for OLED current deviations due to the deterioration in threshold voltage and uneven electric characteristic in thin film transistors. The invention also provides a method for driving a data driver capable of compensating for the uneven electric characteristic of thin film transistors in the driver for driving picture elements in the current programming-type active matrix OLED display device.

公开(公告)号：US20060104643A1

公开(公告)日：2006-05-18

申请号：US11147638

申请日：2005-06-08

Applicant: Jae-Hoon Lee ,  Jeong-Seok Lee ,  Kwan-Soo Lee ,  Chang-Sup Shim ,  Seong-Taek Hwang

Inventor： Jae-Hoon Lee ,  Jeong-Seok Lee ,  Kwan-Soo Lee ,  Chang-Sup Shim ,  Seong-Taek Hwang

IPC: H04B10/00

CPC classification number: H04B10/25758

Abstract: An optical network for bi-directional communication includes: a base station for generating downlink optical signals and detecting uplink optical signals; and a remote antenna unit for transmitting the downlink optical signals and generating the uplink optical signals to the base station; wherein the remote antenna includes: an optical detector for converting the downlink optical signals into downlink radio signals; an antenna for transmitting the downlink radio signals to outside thereof, and receiving the uplink radio signals in wireless communication; a semiconductor optical amplifier for converting the uplink radio signals into the uplink optical signals to output the uplink optical signals to the base station; and a circulating device having a plurality of ports, each of which is connected to the antenna, the optical detector, and the semiconductor optical amplifier, respectively.

Abstract translation: 一种用于双向通信的光网络包括：用于产生下行光信号并检测上行光信号的基站; 以及远程天线单元，用于发送下行链路光信号并向基站生成上行链路光信号; 其中所述远程天线包括：用于将所述下行链路光信号转换成下行无线电信号的光检测器; 用于将下行链路无线电信号发送到其外部的天线，以及在无线通信中接收上行无线电信号; 半导体光放大器，用于将上行无线电信号转换成上行光信号，以将上行光信号输出到基站; 以及具有多个端口的循环装置，每个端口分别连接到天线，光学检测器和半导体光学放大器。

公开(公告)号：US20060103324A1

公开(公告)日：2006-05-18

申请号：US11274913

申请日：2005-11-14

Applicant: Ji-Hoon Kim ,  Min-Koo Han ,  Jae-Hoon Lee

Inventor： Ji-Hoon Kim ,  Min-Koo Han ,  Jae-Hoon Lee

IPC: G09G3/10

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0254 ,  G09G2320/043 ,  G09G2330/021

Abstract: A display device has a plurality of pixels, where each pixel includes a light emitting element, a capacitor, a driving transistor having a control terminal, an input terminal, and an output terminal and supplying a driving current to the light emitting element to emit light, a first switching unit diode-connecting the driving transistor and supplying a data voltage to the capacitor in response to a scanning signal, and a second switching unit supplying a driving voltage to the driving transistor and connecting the capacitor to the driving transistor in response to the emission signal, wherein the capacitor is connected to the driving transistor through the first switching unit, stores a control voltage depending on the data voltage and the threshold voltage of the driving transistor, and is connected to the driving transistor through the second switching unit to supply the control voltage to the driving transistor.

公开(公告)号：US07012335B2

公开(公告)日：2006-03-14

申请号：US09737540

申请日：2000-12-15

Applicant: Jae-Hoon Lee ,  Kung-Hyon Nam

Inventor： Jae-Hoon Lee ,  Kung-Hyon Nam

IPC: H01L23/48

CPC classification number: H01L21/76807 ,  H01L21/76801

Abstract: A wiring of a semiconductor device and a method of manufacturing the same are disclosed. A first conductive layer is formed on a semiconductor substrate followed by a first insulation material which is deposited on the first conductive layer to form a first insulation layer. Then, a CMP process is implemented to form the first insulation layer. A second insulation layer is formed by depositing a second insulation material on the first insulation layer in order to cover a scratch formed on the first insulation layer after implementing the CMP process. A first etching pattern is formed by etching the second insulation layer to a thickness less than a thickness of the second insulation layer. Thereafter, a conductive material is deposited on the etching pattern and then a planarizing process is implemented to form a conductive pattern having a damascene shape. The formation of a bridge between neighboring conductive patterns caused by a scratch generated during implementation of CMP process can be prevented to markedly decrease defects in semiconductor devices.

公开(公告)号：US20060049426A1

公开(公告)日：2006-03-09

申请号：US10998942

申请日：2004-11-30

Applicant: Jae Hoon Lee ,  Jung Lee

Inventor： Jae Hoon Lee ,  Jung Lee

IPC: H01L29/739

CPC classification number: H01L29/7787 ,  H01L29/2003

Abstract: A nitride based hetero-junction field effect transistor comprises a high resistance nitride semiconductor layer formed on a substrate, an Al-doped GaN layer formed on the high resistance nitride semiconductor layer and having an Al content of 0.1˜1%, an undoped GaN layer formed on the Al-doped GaN layer, and an AlGaN layer formed on the undoped GaN layer such that a two-dimensional electron gas (2DEG) layer is formed at an interface of the undoped GaN layer. With the Al-doped GaN layer and the undoped GaN layer grown on the high resistance GaN layer having low crystallinity, crystallinity of the GaN layer is enhanced, and thus electrical characteristics of DC and RE of an HEET device are remarkably improved due to enhanced carrier mobility.

Abstract translation: 氮化物基异质结场效应晶体管包括形成在衬底上的高电阻氮化物半导体层，形成在高电阻氮化物半导体层上并具有0.1〜1％的Al含量的Al掺杂GaN层，未掺杂的GaN层 形成在Al掺杂GaN层上的AlGaN层和形成在未掺杂的GaN层上的AlGaN层，使得在未掺杂的GaN层的界面处形成二维电子气（2DEG）层。 通过在具有低结晶度的高电阻GaN层上生长Al掺杂的GaN层和未掺杂的GaN层，GaN层的结晶度增强，因此HEET器件的DC和RE的电特性由于载体的增强而显着提高 流动性

公开(公告)号：US06973866B2

公开(公告)日：2005-12-13

申请号：US10716033

申请日：2003-11-18

Applicant: Jae Hoon Lee

Inventor： Jae Hoon Lee

IPC: F15B11/17 ,  E02F9/20 ,  E02F9/22 ,  F15B11/16 ,  F15B20/00 ,  F15B13/04

CPC classification number: F15B11/162 ,  E02F9/2235 ,  F15B20/00 ,  F15B2211/20553 ,  F15B2211/255 ,  F15B2211/30505 ,  F15B2211/3116 ,  F15B2211/40515 ,  F15B2211/428 ,  F15B2211/45 ,  F15B2211/6355 ,  F15B2211/71

Abstract: In the present invention, it is possible to supply hydraulic fluid by the amount needed in an option tool even when a combined work is performed by engaging an option tool having a different operation pressure to a work apparatus. The hydraulic circuit for an option tool of heavy equipment comprises a poppet valve which is openably and closably installed in a flow path of a supply side of the option tool spool, a first spool which is installed in a flow path between the poppet valve and the option tool spool and has an opening portion adapted to maintain a constant pressure difference when the first spool is switched by pilot pressure discharged from the pilot pump, and a second spool which is installed in a down stream side of the poppet valve and is switched when an over load occurs due to an over pressure exceeding the degree set in the option tool for thereby closing the poppet valve.

Abstract translation: 在本发明中，即使当通过将具有不同操作压力的选件工具接合到工作装置来执行组合作业时，也可以将液压流体提供在选项工具中所需的量。 用于重型设备的选件工具的液压回路包括提升阀，该提升阀可开启和关闭地安装在选件工具阀芯的供给侧的流动路径中，第一阀芯安装在提升阀和阀芯之间的流动路径中 可选择的工具阀芯，并且具有开口部，其适于在通过从先导泵排出的先导压力切换第一阀芯时保持恒定的压力差;以及第二阀芯，其安装在提升阀的下游侧， 由于超过选项工具中设定的程度的过压而发生过载，从而关闭提升阀。

公开(公告)号：US06792156B2

公开(公告)日：2004-09-14

申请号：US09801811

申请日：2001-03-09

Applicant: Jae-Hoon Lee

Inventor： Jae-Hoon Lee

IPC: G06K936

CPC classification number: H04N19/503 ,  G06T7/262 ,  H04N9/8042 ,  H04N19/619 ,  H04N19/63 ,  H04N19/99

Abstract: Disclosed is an input image data compressor which comprises an image recording controller for generating image information on respective input objects from the input image data, generating image information on a moving object using the image information, comparing the previously input image data with the presently input image data, generating new image information on the moving object and compressing the new image information; a storage unit for storing signals or data generated during compression operation of the image recording controller in a corresponding established address; and a compressed image storage unit for storing the compressed image data compressed by the control operation of the image recording controller.

Abstract translation: 公开了一种输入图像数据压缩器，其包括图像记录控制器，用于从输入图像数据生成关于各个输入对象的图像信息，使用图像信息生成关于移动物体的图像信息，将先前输入的图像数据与当前输入的图像进行比较 数据，在移动物体上产生新的图像信息并压缩新的图像信息; 存储单元，用于存储在对应的建立地址中的图像记录控制器的压缩操作期间产生的信号或数据; 以及压缩图像存储单元，用于存储通过图像记录控制器的控制操作压缩的压缩图像数据。

公开(公告)号：US09595582B2

公开(公告)日：2017-03-14

申请号：US14630885

申请日：2015-02-25

Applicant: Jae-Hoon Lee ,  Nok-Hyun Ju ,  Hyeong-Mo Yang ,  Sung-Ii Chang ,  Chan-Ho Lee

Inventor： Jae-Hoon Lee ,  Nok-Hyun Ju ,  Hyeong-Mo Yang ,  Sung-Ii Chang ,  Chan-Ho Lee

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/417 ,  H01L29/423 ,  H01L27/02 ,  H01L27/115

CPC classification number: H01L29/0692 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/11582 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/4238 ,  H01L29/78

Abstract: A metal-oxide-semiconductor field-effect transistor device includes a first active area, a first gate electrode configured to cross the first active area and extend in a Y direction, and define a first source area and a first drain area, first gate contacts disposed on the first gate electrode to align on a first virtual gate passing line extending in the Y direction, first source contacts disposed on the first source area to align on a first virtual source passing line extending in the Y direction, and first drain contacts disposed on the first drain area to align on a first virtual drain passing line extending in the Y direction, wherein at least one of the first drain contacts is disposed to align on any one of first virtual X-straight lines configured to pass between the first source contacts and extend parallel in an X direction perpendicular to the Y direction.

Abstract translation: 金属氧化物半导体场效应晶体管器件包括第一有源区，被配置为跨越第一有源区并沿Y方向延伸的第一栅电极，并且限定第一源区和第一漏区，第一栅极接触 设置在所述第一栅电极上以在沿所述Y方向延伸的第一虚拟栅极通过线上对准，所述第一源极配置在所述第一源极区域上，以在沿所述Y方向延伸的第一虚拟源极通过线上对准，并且所述第一漏极接触件布置 在所述第一漏极区域上沿着在Y方向上延伸的第一虚拟漏极通过线对准，其中所述第一漏极接触中的至少一个布置成在构造成在所述第一源极之间通过的第一虚拟X直线之间对准， 接触并且在垂直于Y方向的X方向上平行延伸。