公开(公告)号：US20130082030A1

公开(公告)日：2013-04-04

申请号：US13249560

申请日：2011-09-30

Applicant: Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC: C23F1/00 ,  C23F1/08

CPC classification number: H01J37/32256 ,  H01J37/32247 ,  H01J37/32935 ,  H01L22/00

Abstract: The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber.

Abstract translation: 本发明提供了多个谐振器子系统。 谐振器子系统可以包括一个或多个谐振腔，其被配置为通过在与等离子体相邻的谐振腔中产生谐振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 谐振器子系统可以使用一个或多个接口子系统耦合到处理室，并且可以包括一个或多个谐振腔，并且每个谐振腔可以具有耦合到其上的多个等离子体调谐棒。 一些等离子体调谐杆可被配置成将EM能量从一个或多个谐振腔耦合到处理室内的处理空间。

公开(公告)号：US20130081762A1

公开(公告)日：2013-04-04

申请号：US13249485

申请日：2011-09-30

Applicant: Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC: C23F1/08 ,  H05K13/00 ,  C23C16/511

CPC classification number: H01J37/32192 ,  H01J37/32247 ,  H01J37/32256 ,  Y10T29/49002

Abstract: The invention provides a plurality of plasma tuning rod subsystems. The plasma tuning rod subsystems can comprise one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.

Abstract translation: 本发明提供了多个等离子体调谐棒子系统。 等离子体调谐杆子系统可以包括一个或多个微波空腔，其被配置为通过在等离子体内和/或邻近等离子体中的一个或多个等离子体调谐杆中产生共振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 一个或多个微波空腔组件可以耦合到处理室，并且可以包括一个或多个调谐空间/空腔。 每个调谐空间/空腔可以具有耦合到其上的一个或多个等离子体调谐杆。 等离子体调谐棒中的一些可被配置为将EM能量从一个或多个谐振腔耦合到处理室内的处理空间，从而在工艺空间内产生均匀的等离子体。

公开(公告)号：US20120248310A1

公开(公告)日：2012-10-04

申请号：US13433071

申请日：2012-03-28

Applicant: Lee Chen ,  Barton Lane ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Lee Chen ,  Barton Lane ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC: G01T1/185

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.

Abstract translation: 一种用于确定等离子体的离子能量分布并包括入口格栅，选择栅格和离子收集器的离子能量分析器。 入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。 离子收集器通过第一电压源耦合到入口电网。 选择网格位于入口格栅和离子收集器之间，并通过第二电压源耦合到入口格栅。 离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

公开(公告)号：US08183062B2

公开(公告)日：2012-05-22

申请号：US12391410

申请日：2009-02-24

Applicant: Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager

Inventor： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager

IPC: H01L21/66

CPC classification number: G03B27/42 ,  G03F7/70466

Abstract: The invention can provide apparatus and methods of creating metal gate structures on wafers in real-time using Lithography-Etch-Lithography-Etch (LELE) processing sequence. Real-time data and/or historical data associated with LELE processing sequences can be fed forward and/or fed back as fixed variables or constrained variables in internal-Integrated-Metrology modules (i-IMM) to improve the accuracy of the metal gate structures.

Abstract translation: 本发明可以提供使用光刻蚀刻光刻蚀刻（LELE）处理序列实时地在晶片上形成金属栅极结构的设备和方法。 与LELE处理序列相关联的实时数据和/或历史数据可以作为内部集成计量模块（i-IMM）中的固定变量或约束变量进​​行向前馈送和/或反馈，以提高金属门结构的精度 。

公开(公告)号：US08100082B2

公开(公告)日：2012-01-24

申请号：US11750539

申请日：2007-05-18

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: C23C16/30 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/32192 ,  H01J37/3244

Abstract: A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.

公开(公告)号：US08019458B2

公开(公告)日：2011-09-13

申请号：US12186668

申请日：2008-08-06

Applicant: Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

Inventor： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

IPC: G06F19/00 ,  H01L21/00 ,  H01L21/36 ,  H01L21/44 ,  H01L21/31 ,  G01R31/26 ,  C30B23/00 ,  C23F1/00 ,  H01L39/00

CPC classification number: G05B17/02 ,  Y10S438/924

Abstract: The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.

Abstract translation: 本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚蚀刻（PE）序列 ，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多层和/或多个过程步骤之间的动态交互行为建模。 多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

公开(公告)号：US07988813B2

公开(公告)日：2011-08-02

申请号：US11684853

申请日：2007-03-12

Applicant: Lee Chen ,  Radha Sundararajan ,  Merritt Funk

Inventor： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC: H01L21/306

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/0324 ,  Y10T428/215

Abstract: A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.

Abstract translation: 描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。 用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。 所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与 一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

公开(公告)号：US07939450B2

公开(公告)日：2011-05-10

申请号：US11859507

申请日：2007-09-21

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundararajan

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundararajan

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32422 ,  H01L22/12 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention can provide a method of processing a substrate using S-O processing sequences and evaluation libraries that can include one or more optimized spacer creation and evaluation procedures.

Abstract translation: 本发明可以提供使用S-O处理序列处理衬底的方法以及可以包括一个或多个优化的间隔物产生和评估程序的评估库。

公开(公告)号：US20110070665A1

公开(公告)日：2011-03-24

申请号：US12887576

申请日：2010-09-22

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: H01L21/66

CPC classification number: H01J37/32027 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

Abstract: The invention can provide apparatus and methods for processing substrates and/or wafers in real-time using at least one Direct Current (DC)/Radio Frequency (RF) Hybrid (DC/RFH) processing system and associated Direct Current/Radio Frequency Hybrid (DC/RFH) procedures and DC/RFH process parameters and/or DC/RFH models.

Abstract translation: 本发明可以提供使用至少一个直流（DC）/射频（RF）混合（DC / RFH）处理系统和相关联的直流/射频混合（DC / RFH）处理系统来实时处理衬底和/或晶片的装置和方法 DC / RFH）程序和DC / RFH过程参数和/或DC / RFH模型。

公开(公告)号：US07899637B2

公开(公告)日：2011-03-01

申请号：US11762563

申请日：2007-06-13

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel Prager ,  Lee Chen ,  Radha Sundararajan

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel Prager ,  Lee Chen ,  Radha Sundararajan

IPC: B21D22/00

CPC classification number: H01L22/12 ,  G06F17/5036 ,  H01L21/67253 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention can provide a method of processing a substrate using Gate-Optimization processing sequences and evaluation libraries that can include gate-etch procedures, COR-etch procedures, and evaluation procedures.

Abstract translation: 本发明可以提供使用Gate-Optimization处理序列和评估库来处理衬底的方法，所述评估库可包括栅极蚀刻程序，COR蚀刻程序和评估程序。