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245 条记录 (耗时 0.037 秒)

    Negative active material for rechargeable lithium battery, method of preparing the same, and rechargeable lithium battery including the same
    112.
    发明授权
    Negative active material for rechargeable lithium battery, method of preparing the same, and rechargeable lithium battery including the same 有权
    用于可再充电锂电池的负极活性材料，其制备方法以及包括其的可再充电锂电池

    公开(公告)号：US08137845B2

    公开(公告)日：2012-03-20

    申请号：US11984531

    申请日：2007-11-19

    申请人： Yang-Soo Kim ,  Wan-Uk Choi ,  Ri-Zhu Yin ,  Joon-Sup Kim ,  Sung-Soo Kim

    发明人： Yang-Soo Kim ,  Wan-Uk Choi ,  Ri-Zhu Yin ,  Joon-Sup Kim ,  Sung-Soo Kim

    IPC分类号： H01M4/13 ,  H01M4/131 ,  H01M4/134 ,  B01J23/00

    CPC分类号： H01M10/0525 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525

    摘要： A negative active material for a rechargeable lithium battery includes a compound represented by the following Formula 1: Li1+xTi1−x−yMyO2+z  (1) wherein, in the above Formula 1, 0.01≦x≦0.5, 0≦y≦0.3, −0.2≦z≦0.2, and M is an element selected from the group consisting of V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, W, Ag, Sn, Ge, Si, Al, and combinations thereof. The negative active material has high capacity and excellent cycle-life characteristics, and particularly, can provide a rechargeable lithium battery having high capacity at high-rate charge and discharge.

    摘要翻译： 用于可再充电锂电池的负极活性材料包括由下式1表示的化合物：Li1 + xTi1-x-yMyO2 + z（1）其中，在上述式1中，0.01≤n1E; x和nlE; 0.5,0和nlE; y＆ 0.3，-0.2＆nlE; z＆nlE; 0.2，M是选自由V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Zr，Nb，Mo，W，Ag，Sn，Ge组成的组中的元素 ，Si，Al及其组合。 负极活性物质具有高容量和优异的循环寿命特性，特别是能够提供高容量充放电时的高容量的可再充电锂电池。

    Non-volatile memory devices including a floating gate and methods of manufacturing the same
    114.
    发明授权
    Non-volatile memory devices including a floating gate and methods of manufacturing the same 有权
    包括浮动栅极的非易失性存储器件及其制造方法

    公开(公告)号：US08120091B2

    公开(公告)日：2012-02-21

    申请号：US12128078

    申请日：2008-05-28

    申请人： Suk-Kang Sung ,  Choong-Ho Lee ,  Sang-wook Lim ,  Dong-Uk Choi ,  Hee-Soo Kang ,  Kyu-Charn Park

    发明人： Suk-Kang Sung ,  Choong-Ho Lee ,  Sang-wook Lim ,  Dong-Uk Choi ,  Hee-Soo Kang ,  Kyu-Charn Park

    IPC分类号： H01L29/788

    CPC分类号： H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

    摘要： A non-volatile memory device includes a substrate and a tunnel insulation layer pattern, such that each portion of the tunnel insulation pattern extends along a first direction and adjacent portions of the tunnel insulation layer pattern may be separated in a second direction that is substantially perpendicular to the first direction. A non-volatile memory device may include a gate structure formed on the tunnel insulation layer pattern. The gate structure may include a floating gate formed on the tunnel insulation layer pattern along the second direction, a first conductive layer pattern formed on the floating gate in the second direction, a dielectric layer pattern formed on the first conductive layer pattern along the second direction, and a control gate formed on the dielectric layer pattern in the second direction.

    摘要翻译： 非易失性存储器件包括衬底和隧道绝缘层图案，使得隧道绝缘图案的每个部分沿着第一方向延伸，并且隧道绝缘层图案的相邻部分可以在基本垂直的第二方向上分离 到第一个方向。 非易失性存储器件可以包括形成在隧道绝缘层图案上的栅极结构。 栅极结构可以包括沿着第二方向形成在隧道绝缘层图案上的浮动栅极，在第二方向上形成在浮置栅极上的第一导电层图案，沿着第二方向形成在第一导电层图案上的电介质层图案 以及在第二方向上形成在电介质层图案上的控制栅极。

    Flash memory device including a dummy cell
    116.
    发明授权
    Flash memory device including a dummy cell 有权
    包括虚拟单元的闪存设备

    公开(公告)号：US07978522B2

    公开(公告)日：2011-07-12

    申请号：US12416477

    申请日：2009-04-01

    申请人： Hee-Soo Kang ,  Dong-Uk Choi ,  Choong-Ho Lee ,  Sang-Gu Kang

    发明人： Hee-Soo Kang ,  Dong-Uk Choi ,  Choong-Ho Lee ,  Sang-Gu Kang

    IPC分类号： G11C11/34

    CPC分类号： G11C11/5628 ,  G11C16/0483

    摘要： A non-volatile memory device includes a selection transistor coupled to a bit line. The device also includes a plurality of memory cells serially coupled to the selection transistor and at least one dummy cell located between the plurality of memory cells. The dummy cell is turned off during a programming operation of a memory cell located between the dummy cell and the selection transistor.

    摘要翻译： 非易失性存储器件包括耦合到位线的选择晶体管。 该装置还包括串联耦合到选择晶体管的多个存储单元和位于多个存储单元之间的至少一个虚拟单元。 在位于虚设单元和选择晶体管之间的存储单元的编程操作期间，虚设单元关闭。

    Method of allocating frequency subband and apparatus adopting the same
    117.
    发明授权
    Method of allocating frequency subband and apparatus adopting the same 有权
    分配频率子带的方法及其采用的方法

    公开(公告)号：US07957340B2

    公开(公告)日：2011-06-07

    申请号：US11865421

    申请日：2007-10-01

    申请人： Yun-hwa Choi ,  Hyong-uk Choi

    发明人： Yun-hwa Choi ,  Hyong-uk Choi

    IPC分类号： H04W4/00

    CPC分类号： H04W16/14 ,  H04B1/7163 ,  H04W72/0453 ,  H04W84/18

    摘要： A method of allocating frequency subbands in an ultrawideband (UWB) wireless communication system and an apparatus adopting the same are provided. The method of allocating frequency subbands to a device in a communication system, the method including: (a) determining whether usage of a first frequency band including upper frequency subbands is necessary; and (b) if it is determined that the usage of the first frequency band is necessary, not setting usage permission for the first frequency band to the device and not granting access to the first frequency band if a request for usage of the first frequency band is received from the device. When generation of a new piconet is necessary or generation of a new piconet is requested in a multi-piconet environment, since subbands of a high frequency group are allocated through negotiation, frequency resources are efficiently managed.

    摘要翻译： 提供了一种在超宽带（UWB）无线通信系统中分配频率子带的方法和采用该方法的装置。 将频率子带分配给通信系统中的设备的方法，所述方法包括：（a）确定是否需要包括高频子带的第一频带的使用; 以及（b）如果确定需要第一频带的使用，则不对设备使用第一频带的使用许可，并且如果第一频带的使用请求不准予对第一频带的访问 从设备接收。 当需要新的微微网的生成或者在多微微网环境中请求新的微微网的生成时，由于通过协商来分配高频组的子带，所以能够有效地管理频率资源。

    Flash memory device and programming/erasing method of the same
    119.
    发明申请
    Flash memory device and programming/erasing method of the same 有权
    闪存设备和编程/擦除方法相同

    公开(公告)号：US20100128522A1

    公开(公告)日：2010-05-27

    申请号：US12591428

    申请日：2009-11-19

    申请人： Dong-uk Choi ,  Jung-dal Choi ,  Choong-ho Lee ,  Sung-hoi Hur ,  Min-tai Yu

    发明人： Dong-uk Choi ,  Jung-dal Choi ,  Choong-ho Lee ,  Sung-hoi Hur ,  Min-tai Yu

    IPC分类号： G11C16/16 ,  G11C16/04 ,  G11C16/12

    CPC分类号： G11C16/16 ,  G11C16/0483 ,  G11C16/10

    摘要： A flash memory device includes a bulk region, first through nth memory cell transistors arranged in a row on the bulk region, first through nth word lines respectively connected to gates of the first through nth memory cell transistors, a first dummy cell transistor connected to the first memory cell transistor, a first dummy word line connected to a gate of the first dummy cell transistor, a first selection transistor connected to the first dummy cell transistor, a first selection line connected to a gate of the first selection transistor, and a voltage control unit connected to the first selection line, the voltage control unit being adapted to output to the first selection line a voltage lower than a voltage applied to the bulk region, in an erasing mode for erasing the first through nth memory cell transistors.

    摘要翻译： 闪速存储器件包括体区域，在体区域上排列成行的第一至第n个存储单元晶体管，分别连接到第一至第n存储单元晶体管的栅极的第一至第n字线，连接到 第一存储单元晶体管，连接到第一虚设单元晶体管的栅极的第一虚拟字线，连接到第一虚设单元晶体管的第一选择晶体管，连接到第一选择晶体管的栅极的第一选择线， 控制单元连接到第一选择线，电压控制单元适于在以擦除第一至第n个存储单元晶体管的擦除模式中向第一选择线输出低于施加到体区的电压的电压。

    DISPLAY DEVICE AND METHOD OF DRIVING THE SAME
    120.
    发明申请
    DISPLAY DEVICE AND METHOD OF DRIVING THE SAME 失效
    显示装置及其驱动方法

    公开(公告)号：US20100033513A1

    公开(公告)日：2010-02-11

    申请号：US12477849

    申请日：2009-06-03

    申请人： Kyung-Uk CHOI ,  Sang-Gil Lee ,  Yun-Jae Park

    发明人： Kyung-Uk CHOI ,  Sang-Gil Lee ,  Yun-Jae Park

    IPC分类号： G09G5/10 ,  G09G3/36 ,  G09G3/32

    CPC分类号： G09G3/3611 ,  G09G3/3406 ,  G09G3/3648 ,  G09G2320/0606 ,  G09G2320/064 ,  G09G2320/0646 ,  G09G2320/0673 ,  G09G2330/021 ,  G09G2360/16

    摘要： Disclosed are a display device and a method of driving the same capable of improving display quality and reducing the manufacturing cost. A display device includes a display panel displaying images corresponding to image signals, a light-emission block supplying backlight to the display panel, and a backlight driver outputting a light data signal for determining luminance of backlight. One of a plurality of linear gamma curves is selected from a lookup table in accordance with average image luminance during prescribed frames, and the duty ratio of the light data signal is determined on the basis of the selected linear gamma curve. Each of the linear gamma curves represents the relationship between the average image luminance and the duty ratio of the light data signal.

    摘要翻译： 公开了能够提高显示质量并降低制造成本的显示装置及其驱动方法。 显示装置包括：显示面板，显示与图像信号相对应的图像;向显示面板提供背光的发光块;以及输出用于确定背光亮度的光数据信号的背光驱动器。 根据规定帧中的平均图像亮度，从查找表中选择多个线性伽马曲线中的一个，并且基于所选择的线性伽马曲线来确定光数据信号的占空比。 每个线性伽马曲线表示平均图像亮度和光数据信号的占空比之间的关系。