摘要:
Process solutions comprising one or more surfactants are used to reduce the number of pattern collapse defects on a plurality of photoresist coated substrates during the manufacture of semiconductor devices.
摘要:
Adaptive Gain Control (AGC) is performed directly in a coded domain. A Coded Domain Adaptive Gain Control (CD-AGC) system modifies at least one parameter of a first encoded signal, resulting in corresponding modified parameter(s). The CD-VQE system replaces the parameter(s) of the first encoded signal with the modified parameter(s), resulting in a second encoded signal. In a decoded state, the second encoded signal approximates a target signal that is a function of two signals, including the first encoded signal and a third encoded signal, in at least a partially decoded states. Thus, the first encoded signal does not have to go through intermediate decode/re-encode processes, which can degrade overall speech quality. Computational resources required for a complete re-encoding are not needed. Overall delay of the system is minimized. The CD-AGC system can be used in any network in which signals are communicated in a coded domain, such as a Third Generation (3G) wireless network.
摘要:
This invention provides water-based compositions, particularly coating, ink, adhesive, fountain solution and agricultural compositions, manifesting reduced equilibrium and dynamic surface tension by the incorporation of a surface tension reducing amount of a mixture of a non-fluorinated anionic compound and a non-fluorinated weak base cationic compound, the mixture demonstrating a dynamic surface tension (DST) which is less than the DST of the individual anionic and cationic compounds and less than 45 dynes/cm, at a concentration of ≦5 wt % in water at 23° C. and 20 bubbles/second or less than 40 dynes/cm at a concentration of ≦0.03M in water at 23° C. and 0.1 bubbles/second according to the maximum-bubble pressure method.
摘要:
The invention relates to a method for controlling overload in a packet-switched network, especially in a network where the Transmission Control Protocol (TCP) is used as the transport layer protocol. In order to inform the traffic source at a very early stage that the network is getting overloaded or congested, the transmission of acknowledgments traveling towards the source is only allowed if enough tokens are available. A token-based mechanism calculates the number of tokens on the basis of resource conditions such as a spare forward buffer capacity in a network node. Thereby, a threshold for a buffer occupancy or a rate for delaying the acknowledgments do not have to be determined. The acknowledgments are constrained closely related to the current network resource and not to the characterization of the data traffic. As a result, the overload control is significantly robust.
摘要:
A maintenance component of an apparatus in one example employs one or more packets that are communicated over an active packet connection to evaluate the active packet connection.
摘要:
Disclosed are silica-coated nanoparticles and a process for producing silica-coated nanoparticles. Silica-coated nanoparticles are prepared by precipitating nano-sized cores from reagents dissolved in the aqueous compartment of a water-in-oil microemulsion. A reactive silicate is added to coat the cores with silica. Also disclosed are methods for functionalizing silica-coated nanoparticles for use in a variety of applications.
摘要:
Si-containing film forming compositions are disclosed comprising a precursor having the formula [—NR—R4R5Si—(CH2)t—SiR2R3—]n wherein n=2 to 400; R, R2, R3, R4, and R5 are independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R2, R3, R4, and R5 is H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary pre-cursors include, but are not limited to, [—NH—SiH2—CH2—SiH2—]n, and [—N(SiH2—CH2—SiH3)—SiH2—CH2—SiH2—]n.
摘要:
A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.