Abstract:
In some examples, an integrated circuit device includes a substrate, a memristor over the substrate and comprising a first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers, and a thermal resistor layer over the substrate.
Abstract:
A printhead with a number of memristors and a parallel current distributor is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of memristor cells. Each memristor cell includes a memristor to store information and a multiplexing component to select a memristor. The printhead also includes and at least one current distributor connected in parallel to a number of memristor cells.
Abstract:
In an embodiment, a fluid ejection device includes a fluid feed slot formed in a printhead die and a plurality of printhead-integrated ink level sensors (PILS). A fluid ejection device may include a first PILS to sense an ink level of a first chamber in fluid communication with the fluid feed slot, the first PILS to detect an empty ink level of the first chamber when the fluid ejection device is at a first ink level state, and a second PILS to sense an ink level of a second chamber in fluid communication with the fluid feed slot, the second PILS to detect an empty ink level of the second chamber when the fluid ejection device is at a second ink level state, different than the first ink level state.
Abstract:
In some examples, an ink level sensor includes a sense capacitor between a first node and ground, a first switch to couple a first voltage to the first node and charge the sense capacitor, a second switch to couple the first node with a second node and share the charge between the sense capacitor and a reference capacitor, causing a second voltage at the second node, and a transistor having a drain, a gate coupled to the second node, and a source coupled to ground, the transistor to provide a drain to source resistance in proportion to the second voltage.
Abstract:
A non-volatile memory element with thermal-assisted switching control is disclosed. The non-volatile memory element is disposed on a thermal inkjet resistor. Methods for manufacturing the combination and methods of using the combination are also disclosed.
Abstract:
In an embodiment, a fluid ejection device includes an ink slot formed in a printhead die. The fluid ejection device also includes a printhead-integrated ink level sensor (PILS) to sense an ink level of a chamber in fluid communication with the slot, and a clearing resistor circuit disposed within the chamber to clear the chamber of ink.
Abstract:
According to an example, an apparatus may include an agent delivery device to selectively deliver an agent onto a layer of build material particles. The apparatus may also include an energy source to apply energy onto the layer of build material particles to selectively fuse the build material particles in the layer based upon the locations at which the agent was delivered and a chamber formed of a plurality of walls, in which the agent delivery device and the energy source are housed inside the chamber. The apparatus may further include a vapor source to supply vapor into the chamber to wet the build material particles inside the chamber.
Abstract:
A surface enhanced luminescence (SELS) sensor may include a substrate and nano fingers projecting from the substrate. Each of the nano fingers may include a polymer pillar having a sidewall and a top, a coating layer covering the sidewall and a metal cap supported by and in contact with the top of the pillar.
Abstract:
A device includes a P-N junction comprising a monolithic N-type semiconductor layer coupled to a monolithic P-type semiconductor layer. The monolithic N-type semiconductor layer includes a first portion and a second portion. The first portion has a first surface and the second portion has a second surface facing away from the first surface. The monolithic P-type semiconductor layer includes a third portion and a fourth portion. The third portion has a third surface and the fourth portion has a fourth surface facing away from the third surface.
Abstract:
Examples associated with user authentication are described. One example method includes authenticating a user of a device using a static authentication technique. A behavior profile associated with the user is loaded. The behavior profile describes a pattern of device usage behavior by the user in a three-dimensional space over a time slice. The behavior profile also identifies distinctive user habits. Usage of the device is monitored, and a behavior similarity index is periodically updated. The behavior similarity index describes a similarity between the usage of the device and the pattern of device usage behavior. The behavior similarity index is weighted based on the distinctive user habits. Access to the device is restricted when the behavior similarity index reaches a predefined threshold.