公开(公告)号：US20090124466A1

公开(公告)日：2009-05-14

申请号：US12291558

申请日：2008-11-13

申请人： Hao Zhang

发明人： Hao Zhang

IPC分类号： A63B22/02

CPC分类号： A63B22/02 ,  A63B22/0023 ,  A63B22/0235 ,  A63B2210/50

摘要： The treadmill comprises a base frame adapted to rest on a surface which has left and right inner sides and left and right outer sides; a tread base having a frame including a front end, a rear end, and left and right outer surfaces; a linkage assembly having a first end connected to the front of the tread base and a second end connected to the base frame. The lateral width between the left and right outer sides of the base frame is substantially same with the lateral width between the left and right outer surfaces of the tread base; the linkage unit is approximately mounted in a space which is formed by the left and right inner surfaces of the base frame and the bottom of the tread base.

摘要翻译： 所述跑步机包括适于搁置在具有左内侧和右侧内侧以及左右外侧的表面上的基座; 胎面基部，其具有包括前端，后端以及左右外表面的框架; 连杆组件，其具有连接到胎面基部的前部的第一端和连接到基架的第二端。 基座框架的左右外侧之间的横向宽度与胎面基座的左右外表面之间的横向宽度基本相同; 联动单元大致安装在由基架的左右内表面和胎面基部的底部形成的空间中。

公开(公告)号：US20080224164A1

公开(公告)日：2008-09-18

申请号：US12126430

申请日：2008-05-23

申请人： Jiandong Huang ,  Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  Hao Zhang

发明人： Jiandong Huang ,  Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  Hao Zhang

IPC分类号： H01L33/00 ,  H01L21/28 ,  H01J1/63

CPC分类号： C23C16/30 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31608 ,  H01L33/005 ,  H01L33/18 ,  H01L33/34

摘要： A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.

摘要翻译： 使用硅（Si）纳米晶体Si绝缘膜的发光器件具有相关的制造方法。 该方法提供掺杂半导体或金属底电极。 使用高密度等离子体增强化学气相沉积（HDPECVD）工艺，淀积厚度在30至200纳米（nm）范围内的半导体电极上的Si绝缘体膜。 例如，膜可以是SiO x，其中X小于2，Si 3 N x，其中X小于4，或SiC x，其​​中X小于1.Si绝缘膜退火，结果Si纳米晶体为 在电影中形成。 然后，形成覆盖Si绝缘膜的透明金属电极。 退火的Si纳米晶SiO x膜具有小于20伏特的导通电压，如关于大于0.03瓦/平方米的表面发射功率所限定的。

公开(公告)号：US20080032715A1

公开(公告)日：2008-02-07

申请号：US11837167

申请日：2007-08-10

申请人： Yongli Jia ,  Hao Zhang

发明人： Yongli Jia ,  Hao Zhang

IPC分类号： H04Q7/22 ,  H04Q7/20

CPC分类号： H04W68/12

摘要： The embodiments of the present invention disclose a method for issuing paging messages and an MSC/VLR, the method includes: determining types of networks terminating the process. if the MS only accesses a 2G network; issuing, by the MSC/VLR, paging messages on an RNC, and terminating the process, if the MS only accesses a 3G network; and issuing, by the MSC/VLR, paging messages on both the BSC and RNC, if the MS accesses both the 2G network and the 3G network. According to the embodiments of the present invention, the MSC/VLR can choose to issue paging messages on the BSC or the RNC separately or on both the BSC and the RNC, since it can determine the types of networks accessed by the MS. Thus, unnecessary paging messages issued on the BSC same time, a great deal of radio paging channel resources on the BSC or the RNC is saved, which greatly reduces effects on the process of paging other MSs.

摘要翻译： 本发明的实施例公开了一种用于发布寻呼消息和MSC / VLR的方法，所述方法包括：确定终止该过程的网络的类型。 如果MS仅访问2G网络; 如果MS仅访问3G网络，则由MSC / VLR发出RNC上的寻呼消息并终止该过程; 并且如果MS访问2G网络和3G网络，则由MSC / VLR发送BSC和RNC两者上的寻呼消息。 根据本发明的实施例，MSC / VLR可以选择在BSC或RNC上单独或者在BSC和RNC上发布寻呼消息，因为它可以确定由MS接入的网络的类型。 因此，在BSC同时发出的不必要的寻呼消息被保存在BSC或RNC上的大量无线寻呼信道资源，这大大降低了对寻呼其他MS的处理的影响。

公开(公告)号：US07306812B2

公开(公告)日：2007-12-11

申请号：US10841893

申请日：2004-05-07

申请人： Hao Zhang

发明人： Hao Zhang

IPC分类号： A61F13/00 ,  A61F2/00

CPC分类号： A61K9/006 ,  A61K9/7007

摘要： A dissolvable backing layer for use with transmucosal drug delivery devices includes a dissolvable hydrophilic region and a non-hydrophilic region that inhibits or slows migration of water, drugs, other active agents, or other molecules through the backing layer. The non-hydrophilic region can be a disperse phase of gaseous voids, droplets of a hydrophobic liquid, solid particles of a hydrophobic material, or water insoluble particles that are not necessarily hydrophobic. In the alternative, the non-hydrophilic region may comprise a continuous layer or component that is readily dispersible upon dissolving of the hydrophilic region. The backing layers may be used within any transmucosal delivery device used to delivery drugs or other active agents across a mucosal surface.

摘要翻译： 用于经粘膜药物递送装置的可溶解背衬层包括可溶性亲水区域和非亲水区域，其通过背衬层抑制或减缓水，药物，其它活性剂或其它分子的迁移。 非亲水区域可以是气态空隙的分散相，疏水液体的液滴，疏水性材料的固体颗粒或不一定是疏水性的水不溶性颗粒。 在替代方案中，非亲水区域可以包括在亲水区域溶解时容易分散的连续层或组分。 背衬层可以用于穿过粘膜表面递送药物或其它活性剂的任何经粘膜递送装置。

公开(公告)号：US07279485B2

公开(公告)日：2007-10-09

申请号：US10616365

申请日：2003-07-08

申请人： Peter T. W. Cheng ,  Sean Chen ,  Pratik Devasthale ,  Charles Z. Ding ,  Timothy F. Herpin ,  Shung Wu ,  Hao Zhang ,  Wei Wang ,  Xiang-Yang Ye

发明人： Peter T. W. Cheng ,  Sean Chen ,  Pratik Devasthale ,  Charles Z. Ding ,  Timothy F. Herpin ,  Shung Wu ,  Hao Zhang ,  Wei Wang ,  Xiang-Yang Ye

IPC分类号： A01N43/54 ,  A01N43/76 ,  A61K31/505 ,  C07D239/02 ,  C07D413/00

CPC分类号： C07D413/12 ,  C07D413/14

摘要： Substituted heterocyclic derivatives are provided which have the structure wherein Z1 is (CH2)q or C═O; Z2 is (CH2)p or C═O; D is —CH═ or C═O or (CH2)m where m is 0, 1, 2 or 3; n=0, 1 or 2; p=1 or 2; q=0, 1 or 2; Q is C or N; X is CH or N; X2 is C, N, O or S; X3 is C, N, O or S; X4 is C, N, O or S; X5 is C, N, O or S; X6 is C, N, O or S; provided that at least one of X2, X3, X4, X5 and X6 is N; and at least one of X2, X3, X4, X5 and X6 is C; A, B, R1, R2, R2a, R2b, R4, R3, E, Z and Y are as defined herein. In addition, a method is provided for treating diabetes, Type 2 diabetes, insulin resistance, hyperglycemia, hyperinsulinemia, elevated blood levels of fatty acids or glycerol, hyperlipidemia, obesity, hypertriglyceridemia, Syndrome X, or atherosclerosis, wherein the substituted heterocyclic derivatives are administered in a therapeutically effective amount to a patient.

摘要翻译： 提供了取代的杂环衍生物，其具有其中Z 1是（CH 2 CH 2）q或C-O的结构; Z 2是（CH 2）2或C-O; D是-CH-或C-O或（CH 2 CH 2）m，其中m是0,1,2或3; n = 0,1或2; p = 1或2; q = 0,1或2; Q是C或N; X是CH或N; X 2是C，N，O或S; X 3是C，N，O或S; X 4是C，N，O或S; X 5是C，N，O或S; X 6是C，N，O或S; 条件是X 2，X 3，X 4，X 5和X 3中的至少一个， 6是N; 和X 2，X 3，X 4，X 5和X 6中的至少一个 是C; A，B，R 1，R 2，R 2a，R 2b，R 4， R 3，R 3，E，Z和Y如本文所定义。 另外，提供了一种治疗糖尿病，2型糖尿病，胰岛素抵抗，高血糖症，高胰岛素血症，升高的脂肪酸或甘油血糖水平，高脂血症，肥胖症，高甘油三酯血症，综合征X或动脉粥样硬化的方法，其中给予取代的杂环衍生物 以治疗有效量给予患者。

公开(公告)号：US07276246B2

公开(公告)日：2007-10-02

申请号：US10841892

申请日：2004-05-07

申请人： Hao Zhang

发明人： Hao Zhang

IPC分类号： A61F13/00 ,  A61F2/00

CPC分类号： A61K9/7007 ,  A61K9/006

摘要： A water-dissolvable drug delivery device designed so as to reliably maintain a drug or active agent within a defined region against a mucosal surface. The drug delivery device comprises a water-dissolvable backing layer, an adhesive layer adjacent to at least a portion of the backing layer, and an active layer that is circumscribed by the backing layer and adhesive layer. The backing layer may optionally include a water-dissolvable hydrophilic region and a non-hydrophilic region at least partially encapsulated within the hydrophilic region that inhibits migration of water, drugs, or other active agents through the backing layer. The adhesive layer may be water-activated or it may have a peelable cover layer that, when removed, exposes the adhesive material. The active layer may comprise any drug or other active agent, either alone or in combination with (i) an enhancer that increases the ability of the drug or other active agent to diffuse through a mucosal membrane and/or (ii) a matrix material such as an alginate to hold the active layer together.

摘要翻译： 一种可溶于水的药物递送装置，其被设计成可靠地将药物或活性剂保持在限定区域内的粘膜表面。 药物递送装置包括可溶于水的背衬层，与背衬层的至少一部分相邻的粘合剂层和由背衬层和粘合剂层限定的活性层。 背衬层可以任选地包括至少部分地包封在亲水区域内的水溶性亲水区域和非亲水区域，其抑制水，药物或其它活性剂通过背衬层的迁移。 粘合剂层可以是水活化的，或者其可以具有可剥离的覆盖层，其在被去除时暴露粘合剂材料。 活性层可以包括任何药物或其它活性剂，单独或与（i）增强药物或其它活性剂扩散通过粘膜的能力的增强剂和/或（ii）基质材料 作为将活性层保持在一起的藻酸盐。

公开(公告)号：US20070118682A1

公开(公告)日：2007-05-24

申请号：US11421070

申请日：2006-05-31

申请人： Hao Zhang ,  DaBei Shi

发明人： Hao Zhang ,  DaBei Shi

IPC分类号： G06F12/00

CPC分类号： G06F13/1694 ,  G11C16/20

摘要： Techniques for providing a NAND flash memory interface being compatible with various NAND flash memories and minimizing the impact on an embedded microprocessor at the same time are disclosed. According to one aspect of the techniques, a NAND flash memory interface is provided for coupling to various types of NAND flash memories. The NAND flash memory interface comprises a protocol selection unit and a waveform generation unit. The protocol selection unit is provided for selecting adequate interface protocols for a NAND flash memory coupled thereto according to type parameters of the coupled NAND flash memory. The waveform generation unit is provided for generating an interface time sequence for operating the coupled NAND flash memory according to the interface protocol selected by the protocol selection unit.

摘要翻译： 公开了用于提供与各种NAND闪速存储器兼容并且最小化对嵌入式微处理器的影响的NAND闪存接口的技术。 根据该技术的一个方面，提供NAND闪存接口用于耦合到各种类型的NAND闪速存储器。 NAND闪存接口包括协议选择单元和波形生成单元。 提供协议选择单元，用于根据耦合的NAND闪速存储器的类型参数为与其耦合的NAND闪速存储器选择足够的接口协议。 提供波形生成单元，用于根据由协议选择单元选择的接口协议生成用于操作耦合的NAND闪速存储器的接口时间序列。

公开(公告)号：US20070029575A1

公开(公告)日：2007-02-08

申请号：US11195633

申请日：2005-08-03

申请人： Hao Zhang ,  Yuan-Wei Zheng ,  Hui-Fang Hsu ,  Juan-Li Liu

发明人： Hao Zhang ,  Yuan-Wei Zheng ,  Hui-Fang Hsu ,  Juan-Li Liu

IPC分类号： H01L27/10 ,  H01L21/82

CPC分类号： H01L27/112

摘要： The structure and method of measuring the capacitance comprising a first buried doped area and a heavily doped area in a semiconductor substrate. The heavily doped area is parallel to the buried doped area. Several second buried doped areas, the first oxide layers and the second oxide layers are formed in the semiconductor substrate. Any of the second buried doped areas is perpendicular to the first buried doped area. One end of the second buried doped area is connected to the first buried doped area, and another end is connected to the heavily doped area. Any of the first oxide layers is overlaid on the second buried doped area. Any of the second oxide layers is placed between any two first oxide layers, and the thickness of the second oxide layer is thinner than the thickness of the first oxide layer. At least two first and several second polysilicon rows are formed on the semiconductor substrate, and wherein two first polysilicon rows are respectively placed on two sides of the second buried doped areas. Any of the second polysilicon rows is perpendicular to the first polysilicon row therein. One end of each of the second polysilicon rows is not connected to two fist polysilicon rows. The structure of the present invention is applied to obtain the individual capacitance in relation to the word line.

摘要翻译： 测量电容的结构和方法包括半导体衬底中的第一掩埋掺杂区域和重掺杂区域。 重掺杂区域平行于埋入掺杂区域。 几个第二掩埋掺杂区域，第一氧化物层和第二氧化物层形成在半导体衬底中。 第二掩埋掺杂区域中的任一个垂直于第一掩埋掺杂区域。 第二掩埋掺杂区域的一端连接到第一掩埋掺杂区域，另一端连接到重掺杂区域。 任何第一氧化物层被覆盖在第二掩埋掺杂区域上。 任何第二氧化物层被放置在任何两个第一氧化物层之间，并且第二氧化物层的厚度比第一氧化物层的厚度薄。 在半导体衬底上形成至少两个第一和多个第二多晶硅行，并且其中两个第一多晶硅行分别放置在第二掩埋掺杂区的两侧。 任何第二多晶硅行垂直于其中的第一多晶硅行。 每个第二多晶硅行的一端不连接到两个第一多晶硅行。 应用本发明的结构来获得相对于字线的单独电容。

公开(公告)号：US20070015797A1

公开(公告)日：2007-01-18

申请号：US11155965

申请日：2005-08-22

申请人： Peter Cheng ,  Pratik Devasthale ,  Yoon Jeon ,  Sean Chen ,  Hao Zhang

发明人： Peter Cheng ,  Pratik Devasthale ,  Yoon Jeon ,  Sean Chen ,  Hao Zhang

IPC分类号： A61K31/4439 ,  A61K31/421 ,  C07D413/02 ,  C07D263/34

CPC分类号： C07D263/32 ,  C07D277/24 ,  C07D413/12 ,  C07D413/14 ,  C07D417/04 ,  C07D417/12 ,  C07D495/04

摘要： Compounds are provided which have the structure wherein Q is C or N, A is O or S, Z is O or a bond, X is CH or N and R1, R2, R2a, R2b, R2c, R3, Y, x, m, and n are as defined herein, which compounds are useful as antidiabetic, hypolipidemic, and antiobesity agents.

公开(公告)号：US06827759B2

公开(公告)日：2004-12-07

申请号：US10343286

申请日：2003-01-29

申请人： Hao Zhang

发明人： Hao Zhang

IPC分类号： C22C1907

CPC分类号： C23C14/3414 ,  C22C1/02

摘要： The present invention relates to producing cobalt having a low oxygen and a low oxide inclusion content for use as a sputter target thereby reducing the arcing and metal defects during sputtering commonly associated with high-oxygen cobalt sputter targets. Notably, the method for reducing the oxygen content and the oxide inclusion content in cobalt are separate processes which may be combined in successive order to procuce a low-oxygen cobalt sputter target having a low oxide inclusion content. The reduction in oxygen content preferably is performed prior to reducing the oxide inclusion content. Accordingly, the artisan will appreciate that one process can be performed without the other depending upon whether a reduction in oxygen or oxide inclusions is preferred in a desired cobalt sputter target.

摘要翻译： 本发明涉及生产具有低氧和低氧化物夹杂物含量的钴，用作溅射靶，从而减少通常与高氧钴溅射靶相关的溅射和金属缺陷。 值得注意的是，用于降低钴中的氧含量和氧化物夹杂物含量的方法是分开的方法，其可以连续顺序组合以制备具有低氧化物夹杂物含量的低氧钴溅射靶。 氧含量的降低优选在减少氧化物夹杂物含量之前进行。 因此，本领域技术人员将理解，一个方法可以在不需要另外的方法的情况下执行，这取决于在期望的钴溅射靶中是否优选氧或氧化物夹杂物的减少。