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    Method and apparatus for creating a Spacer-Optimization (S-O) library
    111.
    发明授权
    Method and apparatus for creating a Spacer-Optimization (S-O) library 失效
    用于创建间隔优化（S-O）库的方法和装置

    公开(公告)号：US07765077B2

    公开(公告)日：2010-07-27

    申请号：US11859596

    申请日：2007-09-21

    Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundaranajan

    Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundaranajan

    IPC: G01D18/00

    CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention can provide a method of processing a substrate using Spacer-Optimization (S-O) processing sequences and evaluation libraries that can include one or more optimized spacer creation and evaluation procedures. In addition, the S-O processing sequences can include one or more deposition procedures, one or more partial-etch procedures, one or more chemical oxide removal (COR)-etch procedures, one or more optimization procedures, one or more evaluation procedures, and/or one or more verification procedures.

    Abstract translation: 本发明可以提供使用间隔优化（S-O）处理序列和评估库来处理底物的方法，其可以包括一个或多个优化的间隔物产生和评估程序。 此外，SO处理序列可以包括一个或多个沉积程序，一个或多个部分蚀刻程序，一个或多个化学氧化物去除（COR）获取程序，一个或多个优化程序，一个或多个评估程序和/ 或一个或多个验证程序。

    Multi-plasma neutral beam source and method of operating
    112.
    发明授权
    Multi-plasma neutral beam source and method of operating 有权
    多等离子体中性束源及其操作方法

    公开(公告)号：US07732759B2

    公开(公告)日：2010-06-08

    申请号：US12126456

    申请日：2008-05-23

    Applicant: Lee Chen ,  Merritt Funk

    Inventor： Lee Chen ,  Merritt Funk

    IPC: H05H3/06 ,  H05H3/00

    CPC classification number: H05H3/02 ,  H01J37/32357 ,  H01J37/32422

    Abstract: Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises an electron acceleration member configured to accelerate the electrons from the first plasma region into the second plasma region. Further yet, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

    Abstract translation: 描述了用于生产中性束源的方法和系统。 中性束源包括用于在第一等离子体区域中形成第一等离子体的等离子体产生系统，用于在第二等离子体区域中从第一等离子体区域加热电子以形成第二等离子体的等离子体加热系统，以及用于中和离子的中和器栅格 来自第二等离子体区域中的第二等离子体的物质。 此外，中性束源包括被配置为将电子从第一等离子体区域加速到第二等离子体区域中的电子加速构件。 此外，中性束源包括泵送系统，其能够使用中性束源用于诸如蚀刻工艺的半导体处理应用。

    Neutral beam source and method for plasma heating
    115.
    发明申请
    Neutral beam source and method for plasma heating 有权
    中性束源和等离子体加热方法

    公开(公告)号：US20090090852A1

    公开(公告)日：2009-04-09

    申请号：US11869656

    申请日：2007-10-09

    Applicant: Lee Chen ,  Merritt Funk

    Inventor： Lee Chen ,  Merritt Funk

    IPC: H05H3/06

    CPC classification number: H05H3/06

    Abstract: Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

    Abstract translation: 描述了用于生产中性束源的方法和系统。 中性束源包括用于在第一等离子体区域中形成第一等离子体的等离子体产生系统，用于在第二等离子体区域中从第一等离子体区域加热电子以形成第二等离子体的等离子体加热系统，以及用于中和离子的中和器栅格 来自第二等离子体区域中的第二等离子体的物质。 此外，中性束源包括泵送系统，其能够使用中性束源用于半导体处理应用，例如蚀刻工艺。

    METHOD FOR FLEXING A SUBSTRATE DURING PROCESSING
    118.
    发明申请
    METHOD FOR FLEXING A SUBSTRATE DURING PROCESSING 有权
    在加工过程中使基材挠曲的方法

    公开(公告)号：US20080224364A1

    公开(公告)日：2008-09-18

    申请号：US11684957

    申请日：2007-03-12

    Applicant: Merritt Funk

    Inventor： Merritt Funk

    IPC: B29C43/10

    CPC classification number: H01L21/3065 ,  H01L21/02071 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67253 ,  H01L21/6838 ,  Y10S438/905 ,  Y10S438/935

    Abstract: A method is provided to cause deformation of a substrate during processing of the substrate. The method comprises supporting a substrate on a substrate support in a vacuum chamber for processing; providing backside gas through inlet ports of each of a plurality of groups of ports lying in a respective plurality of areas across the substrate support to a space between the substrate support and the substrate, each of said areas of the substrate support having at least one backside gas inlet port connected to a supply of backside gas and at least one outlet port connected to a vacuum exhaust system; and separately controlling the pressure of the backside gas at different ones of the ports of the plurality to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate, by separately dynamically controlling at least one valve affecting gas flow to a port of each of said areas while separately dynamically controlling at least one other valve affecting gas flow from the remaining plurality of ports of each of said areas surrounding said port to which gas is introduced.

    Abstract translation: 提供了一种在衬底加工期间引起衬底变形的方法。 该方法包括将基板支撑在真空室中用于处理的基板支撑件上; 通过位于基板支撑件的相应多个区域中的多个端口中的每一个端口的入口端口提供背面气体到基板支撑件和基板之间的空间，基板支撑件的每个区域具有至少一个背面 连接到后侧气体供应的气体入口和连接到真空排气系统的至少一个出口; 并且分别控制多个端口中的不同端口处的背侧气体的压力，在各个端口周围的区域中分别控制施加在基板的背面上的局部压力，通过分别动态地控制至少 一个阀影响到每个所述区域的端口的气体流动，同时单独地动态地控制影响来自围绕所述引入气体的所述端口的每个所述区域的剩余多个端口的气体流的至少一个其他阀。

    Using a virtual profile library
    119.
    发明申请
    Using a virtual profile library 失效
    使用虚拟配置文件库

    公开(公告)号：US20070233426A1

    公开(公告)日：2007-10-04

    申请号：US11396112

    申请日：2006-03-31

    Applicant: Merritt Funk ,  Daniel Prager

    Inventor： Merritt Funk ,  Daniel Prager

    IPC: G06F19/00 ,  G06F17/40

    CPC classification number: G01R31/307 ,  G01R31/2846

    Abstract: A method of using a virtual profile library to determine the profile of an integrated circuit structure includes measuring a signal off the structure with a metrology device. The measurement generates a measured signal. The measured signal is compared to a plurality of signals in at least one library. The comparison is stopped if a matching criteria is met. A subset of a virtual profile data space associated with the virtual profile library is determined when a matching criteria is not met. The subset is determined using profile data space associated with the at least one library. A virtual profile signal of the subset of the virtual profile data space is selected. A virtual profile shape and/or virtual profile parameters are determined based on the virtual profile signal. A difference is calculated between the measured signal and the virtual profile signal. The difference is compared to a virtual profile library creation criteria. If the virtual profile library creation criteria is met, then the structure is identified using virtual profile data, which includes the virtual profile shape and/or the virtual profile parameters, associated with the virtual profile signal. Or, if the virtual profile library creation criteria is not met, then a corrective action is applied.

    Abstract translation: 使用虚拟简档库来确定集成电路结构的简档的方法包括使用测量装置测量离开结构的信号。 测量产生测量信号。 将测量的信号与至少一个库中的多个信号进行比较。 如果符合匹配标准，则停止比较。 当匹配标准不满足时，确定与虚拟简档库相关联的虚拟简档数据空间的子集。 使用与至少一个库相关联的简档数据空间确定子集。 选择虚拟简档数据空间的子集的虚拟简档信号。 基于虚拟简档信号来确定虚拟简档形状和/或虚拟简档参数。 在测量信号和虚拟轮廓信号之间计算差值。 将差异与虚拟简档库创建标准进行比较。 如果满足虚拟简档库创建标准，则使用与虚拟简档信号相关联的虚拟简档数据（包括虚拟简档形状和/或虚拟简档参数）来识别该结构。 或者，如果虚拟配置文件库创建条件不满足，则应用纠正措施。

    Method and system for controlling radical distribution
    120.
    发明申请
    Method and system for controlling radical distribution 有权
    控制激进分布的方法和系统

    公开(公告)号：US20070068625A1

    公开(公告)日：2007-03-29

    申请号：US11233025

    申请日：2005-09-23

    Applicant: Merritt Funk ,  David Horak ,  Eric Strang ,  Lee Chen

    Inventor： Merritt Funk ,  David Horak ,  Eric Strang ,  Lee Chen

    IPC: H01L21/306 ,  C23C16/00

    CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

    Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

    Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

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