公开(公告)号：US20100092803A1

公开(公告)日：2010-04-15

申请号：US12585855

申请日：2009-09-25

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC分类号： G11B5/706 ,  B01J19/08 ,  C23C16/44

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C8/36 ,  C23C14/5833 ,  C23C14/584 ,  C23C14/5846 ,  C23C14/5853 ,  G01R33/093 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307

摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.

摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 氢原子，氢离子，氢等离子体，氢原子，氘分子，氘原子，氘离子，氘离子和氘原子中的至少一种的气体进行第二次处理。 。

公开(公告)号：US20100073827A1

公开(公告)日：2010-03-25

申请号：US12284409

申请日：2008-09-22

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/33

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is

摘要翻译： 一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC） 或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。 一个实施例由（NBC / BC）n表示，其中n≥2。 第二实施例由（NBC / BC）n / NBC表示，其中n≥1。 在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。 总自由层厚度<100埃。 这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

公开(公告)号：US20090229111A1

公开(公告)日：2009-09-17

申请号：US12075605

申请日：2008-03-12

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Kunliang Zhang ,  Min Li

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01L43/12 ,  Y10T29/49034

摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.

摘要翻译： 公开了一种具有无定形自由层的TMR或GMR传感器的退火工艺，并采用了至少两个退火步骤。 采用在温度T1为200〜270℃，t1为0.5〜15小时的第一次退火，在AFM和钉扎层中形成钉扎。 在260℃至400℃的温度T2下进行第二次退火，其中T2> T1和t1> t2用于使无定形自由层结晶并完成钉扎。 在两个退火步骤期间使用约8000Oe的施加磁场。 用于形成具有高MR和鲁棒钉扎的传感器的机构可能涉及隧道势垒中的结构变化或自旋阀叠层中的两个层之间的界面处的结构变化。 优选MgO隧道势垒和CoFe / CoB自由层。

公开(公告)号：US07564658B2

公开(公告)日：2009-07-21

申请号：US10948021

申请日：2004-09-23

申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996

摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.

摘要翻译： 公开了具有改进性能的GMR自旋值结构及其制造方法。 一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。 将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。 结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率 除了较小的自由层矫顽力（HCF），层间耦合（HE）和HK值之外还观察到。

公开(公告)号：US20090165288A1

公开(公告)日：2009-07-02

申请号：US12321883

申请日：2009-01-27

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

摘要翻译： 通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。 钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。 因此，Hin值可以减少1/3至约32 Oe。 对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

公开(公告)号：US20090091865A1

公开(公告)日：2009-04-09

申请号：US11906716

申请日：2007-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

摘要翻译： 公开了一种用于CPP-GMR传感器的新型CCP方案，其中在执行预离子处理之前，在诸如Al，Mg或AlCu的下部Cu间隔物和可氧化层之间插入诸如Hf的非晶态金属/合金层 （PIT）和离子辅助氧化（IAO），以将非晶层转变为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。 可以使用无氧Hf层，或者可以在CCP方案中插入薄Cu层以形成Hf / PIT / IAO或Hf / Cu / Al / PIT / IAO配置。 可以使用双重PIT / IAO工艺，如Hf / PIT / IAO / Al / PIT / IAO或Hf / PIT / IAO / Hf / PIT / IAO方案。

公开(公告)号：US07446987B2

公开(公告)日：2008-11-04

申请号：US11016507

申请日：2004-12-17

申请人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

发明人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total Hc, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW (normalized base line wandering) reject rates during a read operation are achieved.

摘要翻译： 用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成， 或刚性交换耦合以确保良好对准的/SUB>Pt_{16.2 或Co 15 Cr 15 纵向偏置方向最小分散。 在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。 可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H c，M L t和S的最大值的厚度 价值观。 本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。 实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了在读取操作期间较低的不对称输出和NBLW（归一化的基线漂移）拒绝率。}

公开(公告)号：US20080239591A1

公开(公告)日：2008-10-02

申请号：US12073895

申请日：2008-03-11

申请人： Yoshihiko Fuji ,  Hideaki Fukuzama ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzama ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

IPC分类号： G11B5/33

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

摘要： A magneto-resistance effect element, including:a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer; a thin film layer which is located in a side opposite to the spacer layer relative to the free magnetization layer; and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al which is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

摘要翻译： 一种磁电阻效应元件，包括：固定磁化层，其一个方向上的磁化基本固定; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层并位于固定磁化层和自由磁化层之间; 薄膜层，相对于自由磁化层位于与间隔层相反的一侧; 以及功能层，其含有选自由固定磁化层，自由磁化层和薄膜层中的至少一个中形成的Si，Mg，B，Al中的至少一种元素。

公开(公告)号：US07355823B2

公开(公告)日：2008-04-08

申请号：US11043839

申请日：2005-01-26

申请人： Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

发明人： Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

IPC分类号： G11B5/33

CPC分类号： C23C28/023 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F41/307 ,  Y10T29/49043 ,  Y10T29/49044

摘要： The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.

摘要翻译： 通过用钽和钌或铜替代传统的单层种子，在高开关场中的CPP GMR器件中的IrMn钉扎层的有效性得到改善。 钽用于抵消下层的结晶影响，而钌或铜提供合适的碱以生长IrMn层。

公开(公告)号：US20070111332A1

公开(公告)日：2007-05-17

申请号：US11280523

申请日：2005-11-16

申请人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

发明人： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  Y10T428/1114 ,  Y10T428/1143

摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

摘要翻译： 通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。 通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。 可以改变NOX时间和压力以实现至少34％的MR比和2.1欧姆 - 欧姆的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。 第二Mg层用于防止相邻铁磁层的氧化。 在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽 在读头。