公开(公告)号：US07359127B2

公开(公告)日：2008-04-15

申请号：US11714581

申请日：2007-03-06

申请人： Tomohiro Saito ,  Masato Nakamura ,  Tomonori Ogura

发明人： Tomohiro Saito ,  Masato Nakamura ,  Tomonori Ogura

IPC分类号： G02B9/14 ,  G02B13/18 ,  G02B3/02

CPC分类号： G02B13/0035 ,  G02B9/16

摘要： It is to provide an imaging lens that can maintain telecentricity, sufficiently correct various aberrations, and acquire an excellent resolution, while being small and light. The imaging lens comprises, in order from an object side towards an image surface side, a first lens which is a biconvex lens, a diaphragm, a second lens which is a meniscus lens having a negative power whose convex surface faces the image surface side, and a third lens which is a meniscus lens having a positive power whose convex surface faces the object side, wherein conditions expressed by each of following expressions are to be satisfied: 0.7≦f1/fl≦1, −6≦f2/fl≦−2.8, and 3≦f3/fl≦10 (where, fl: focal distance of the entire lens system, f1: focal distance of the first lens, f2: focal distance of the second lens, and f3: focal distance of the third lens).

摘要翻译： 它是提供一种可以保持远心性，充分校正各种像差并且在小而轻的情况下获得优异分辨率的成像透镜。 成像透镜从物体侧朝向图像面侧依次包括作为双凸透镜的第一透镜，光阑，具有凸面朝向图像面侧的负光焦度的弯月形透镜的第二透镜， 以及第三透镜，其是具有凸面朝向物体侧的正光焦度的弯月形透镜，其中满足以下各项所表示的条件：0.7 <= F 1 / f 1 = 1，-6 <= F 2 2 / f 1 = 2.8，3 = F 3 / f 1 =（其中，fl：整个的焦距 透镜系统，f 1：第一透镜的焦距，f 2 2：第二透镜的焦距和f 3：焦距 的第三透镜）。

公开(公告)号：US20070217033A1

公开(公告)日：2007-09-20

申请号：US11714581

申请日：2007-03-06

申请人： Tomohiro Saito ,  Masato Nakamura ,  Tomonori Ogura

发明人： Tomohiro Saito ,  Masato Nakamura ,  Tomonori Ogura

IPC分类号： G02B9/14

CPC分类号： G02B13/0035 ,  G02B9/16

摘要： It is to provide an imaging lens that can maintain telecentricity, sufficiently correct various aberrations, and acquire an excellent resolution, while being small and light. The imaging lens comprises, in order from an object side towards an image surface side, a first lens which is a biconvex lens, a diaphragm, a second lens which is a meniscus lens having a negative power whose convex surface faces the image surface side, and a third lens which is a meniscus lens having a positive power whose convex surface faces the object side, wherein conditions expressed by each of following expressions are to be satisfied: 0.7≦f1/fl≦1, −6≦f2/fl≦−2.8, and 3

摘要翻译： 它是提供一种可以保持远心性，充分校正各种像差并且在小而轻的情况下获得优异分辨率的成像透镜。 成像透镜从物体侧朝向图像面侧依次包括作为双凸透镜的第一透镜，光阑，具有凸面朝向图像面侧的负光焦度的弯月形透镜的第二透镜， 以及第三透镜，其是具有凸面朝向物体侧的正光焦度的弯月形透镜，其中满足以下各项所表示的条件：0.7 <= F 1 / f 1 = 1，-6 <= F 2 2 / f 1 = 2.8和3

公开(公告)号：US20070148937A1

公开(公告)日：2007-06-28

申请号：US11709270

申请日：2007-02-22

申请人： Atsushi Yagishita ,  Tomohiro Saito

发明人： Atsushi Yagishita ,  Tomohiro Saito

IPC分类号： H01L21/00 ,  H01L21/3205

CPC分类号： H01L21/84 ,  H01L27/1203

摘要： Dummy gate patterns 111, 112 are formed on a silicon active layer 103 of an SOI substrate, and thereafter, these dummy gate patterns 111, 112 are removed to form gate grooves 130, 132. A threshold voltage of each transistor is adjusted by etching a silicon active layer 103 in any one of these gate grooves 130, 132 to reduce a thickness of a portion constituting a channel region. This enables the enhancement of freedom degree and so on in circuit designing according to conditions.

摘要翻译： 在SOI衬底的硅有源层103上形成虚拟栅极图案111,112，然后去除这些虚拟栅极图案111,112以形成栅极沟槽130,132。通过蚀刻栅极图案111,112来调节每个晶体管的阈值电压 这些栅极沟槽130,132中的任何一个中的硅有源层103，以减小构成沟道区域的部分的厚度。 这样可以根据条件提高电路设计中的自由度等。

公开(公告)号：US20070146899A1

公开(公告)日：2007-06-28

申请号：US11641417

申请日：2006-12-19

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： G02B13/18

CPC分类号： G02B13/0025 ,  G02B9/02 ,  G02B13/18 ,  G02B13/22

摘要： It is to provide a wide-angle optical system for a solid image pickup device that favorably corrects distortion. The imaging lens is a biconvex lens, the object side face is formed into an aspheric shape in which the negative refracting power becomes stronger the farther the imaging lens is from an optical axis in the radial direction, and a condition expressed by the following expression (1) is to be satisfied; 0.8 >|r1/r2|≧0.5  (1) where, r1: center radius curvature of the object side face of the imaging lens r2: center radius curvature of the image surface side face of the imaging lens.

摘要翻译： 为了提供有利于校正失真的固体摄像装置的广角光学系统。 成像透镜是双凸透镜，物体侧面形成为非球面形状，其中负折射力在成像透镜越靠径向的光轴越大，并且由下式表示的条件（ 1）要满足; <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.8> | α-in-line-formula description =“In-line Formulas”end =“tail”？>其中， 成像透镜的物体侧面的中心半径曲率r 2：成像透镜的像面侧面的中心半径曲率。

公开(公告)号：US20060273413A1

公开(公告)日：2006-12-07

申请号：US11185678

申请日：2005-07-21

申请人： Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Tomohiro Saito ,  Kazuhiro Eguchi ,  Atsushi Yagishita

发明人： Motoyuki Sato ,  Katsuyuki Sekine ,  Kazuaki Nakajima ,  Tomohiro Saito ,  Kazuhiro Eguchi ,  Atsushi Yagishita

IPC分类号： H01L29/94

CPC分类号： H01L21/823462 ,  H01L21/82345 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

摘要： There are provided: a semiconductor substrate including first and second device regions isolated by device isolation regions; a first gate insulating film of a high-k material formed in the first device region; a first gate electrode formed on the first gate insulating film; first source and drain regions formed at both sides of the first gate electrode in the first device region; a second gate insulating film of a high-k material which is different from the high-k material of the first gate insulating film, the second gate insulating film being formed in the second device region; a second gate electrode formed on the second gate insulating film; and second source and drain regions formed at both sides of the second gate electrode in the second device region.

摘要翻译： 提供：包括由器件隔离区域隔离的第一和第二器件区域的半导体衬底; 形成在所述第一器件区域中的高k材料的第一栅极绝缘膜; 形成在第一栅极绝缘膜上的第一栅电极; 形成在第一器件区域中的第一栅电极的两侧的第一源极和漏极区; 与所述第一栅极绝缘膜的高k材料不同的高k材料的第二栅极绝缘膜，所述第二栅极绝缘膜形成在所述第二器件区域中; 形成在所述第二栅极绝缘膜上的第二栅电极; 以及形成在第二器件区域中的第二栅电极的两侧的第二源极和漏极区。

公开(公告)号：US20060268432A1

公开(公告)日：2006-11-30

申请号：US11374596

申请日：2006-03-13

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： G02B9/04

CPC分类号： G02B13/003 ,  G02B9/10

摘要： It is to provide an imaging lens system which, while reduced in size and weight, can fully meet the demand for more improvement in the optical performance and also improvement in the productivity. The imaging lens system comprises, in order from an object side towards an image surface side, a diaphragm, a first lens which is a meniscus lens having a positive power whose concave surface facing the object side, and a second lens which is a meniscus lens having a negative power whose convex surface facing the image surface side, wherein the Abbe number of the second lens is set smaller than the Abbe number of the first lens.

摘要翻译： 提供一种成像透镜系统，其在尺寸和重量上都能够完全满足光学性能的进一步提高和生产率的提高的需求。 成像透镜系统从物体侧朝向图像表面侧依次包括隔膜，作为其凹面朝向物体侧的正电力的弯月形透镜的第一透镜和作为弯月形透镜的第二透镜 具有面向图像面侧的凸面的负电力，其中第二透镜的阿贝数被设定为小于第一透镜的阿贝数。

公开(公告)号：US20060102962A1

公开(公告)日：2006-05-18

申请号：US11137510

申请日：2005-05-26

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： H01L29/76

CPC分类号： H01L21/82385 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/785

摘要： A method of manufacturing a semiconductor device comprises forming a gate insulation film on a semiconductor substrate; forming a first gate electrode and a second gate electrode on the gate insulation film, the area of the second gate electrode on the surface of the semiconductor substrate being larger than that of the first gate electrode; selectively etching or grinding an upper part of the second gate electrode so that the thickness of the second gate electrode becomes smaller than the thickness of the first gate electrode; depositing a metal film on the first gate electrode and the second gate electrode; and siliciding the whole of the first gate electrode and the whole of the second gate electrode.

公开(公告)号：US20060081942A1

公开(公告)日：2006-04-20

申请号：US11043115

申请日：2005-01-27

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： H01L29/76

CPC分类号： H01L29/7845 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/7842

摘要： A semiconductor device, comprising: a conductive layer which includes a metal and is formed on a silicon substrate via an insulation layer, the insulation layer being formed by implanting an impurity ion and having a stress changing region with stress different from that of the other region.

摘要翻译： 一种半导体器件，包括：导电层，其包括金属，并且经由绝缘层形成在硅衬底上，所述绝缘层通过注入杂质离子形成，并具有与其它区域的应力不同的应力变化区域 。

公开(公告)号：US20050258477A1

公开(公告)日：2005-11-24

申请号：US10902296

申请日：2004-07-30

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/76 ,  H01L29/786

CPC分类号： H01L29/78606 ,  H01L21/28052 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/785

摘要： According to the present invention, there is provided a semiconductor device manufacturing method comprising: depositing a semiconductor layer and mask material in order over a semiconductor substrate on an insulating film; patterning the semiconductor layer and mask material to form a semiconductor layer in a predetermined region; removing a surface portion of the insulating film by a predetermined depth by performing etching by using the mask material as a mask; forming gate insulating films on at least a pair of opposing side surfaces of the semiconductor layer; depositing silicon on the insulating film, gate insulating films, and mask material; patterning the silicon into a gate pattern to form, on the gate insulating films, a silicon film having the gate pattern on predetermined regions of the pair of opposing side surfaces of the semiconductor layer; ion-implanting a predetermined impurity into the semiconductor layer by using the silicon film as a mask, thereby forming a source region and drain region in two end portions of the semiconductor layer where the silicon film is not formed; and forming a metal film by depositing a metal on at least the silicon film, and forming a gate electrode by reacting the silicon film with the metal film.

摘要翻译： 根据本发明，提供了一种半导体器件制造方法，包括：在半导体衬底上依次在绝缘膜上沉积半导体层和掩模材料; 图案化半导体层和掩模材料以在预定区域中形成半导体层; 通过使用掩模材料作为掩模进行蚀刻，去除绝缘膜的表面部分预定深度; 在所述半导体层的至少一对相对的侧表面上形成栅极绝缘膜; 在绝缘膜上沉积硅，栅极绝缘膜和掩模材料; 将硅图案化成栅极图案，以在栅极绝缘膜上形成在半导体层的一对相对侧表面的预定区域上具有栅极图案的硅膜; 通过使用硅膜作为掩模将预定的杂质离子注入到半导体层中，从而在不形成硅膜的半导体层的两个端部形成源极区域和漏极区域; 以及通过在至少所述硅膜上沉积金属而形成金属膜，以及通过使所述硅膜与所述金属膜反应来形成栅电极。

公开(公告)号：US20050255536A1

公开(公告)日：2005-11-17

申请号：US10516291

申请日：2003-06-04

申请人： Masahiko Okada ,  Tomohiro Saito ,  Hajime Yoshimura

发明人： Masahiko Okada ,  Tomohiro Saito ,  Hajime Yoshimura

IPC分类号： C12Q1/28 ,  C12Q1/61 ,  G01N33/92 ,  C12Q1/44

CPC分类号： C12Q1/28 ,  C12Q1/61 ,  G01N33/92 ,  G01N2800/044

摘要： The present invention relates to a reagent for selective measurement of triglycerides contained in very low density lipoprotein and intermediate density lipoprotein or in very low density lipoprotein in a test sample, including a first reagent that contains a first selective reaction promoter, which is an ether or ester compound of a polyoxyalkylene capable of reacting lipoprotein lipase selectively with triglycerides contained in low density lipoprotein and high density lipoprotein; lipoprotein lipase; enzymes which catalyze a series of reactions leading to the generation of hydrogen peroxide or a reduced coenzyme from glycerol; and an enzyme which catalyzes a reaction leading to the conversion of hydrogen peroxide or a reduced coenzyme into another substance, and a second reagent that contains a second selective reaction promoter, which is capable of reacting lipoprotein lipase selectively with triglycerides contained in very low density lipoprotein, intermediate density lipoprotein, low density lipoprotein and high density lipoprotein and to a method for selective measurement of triglycerides contained in very low density lipoprotein and intermediate density lipoprotein or in very low density lipoprotein in a test sample which uses the above reagent.

摘要翻译： 本发明涉及用于选择性测量包含在测试样品中的极低密度脂蛋白和中密度脂蛋白或极低密度脂蛋白中的甘油三酯的试剂，包括含有第一选择性反应促进剂的第一试剂，其为醚或 能够选择性地使脂蛋白脂肪酶与低密度脂蛋白和高密度脂蛋白中所含的甘油三酯反应的聚氧化烯的酯化合物; 脂蛋白脂肪酶; 催化一系列导致从甘油产生过氧化氢或还原型辅酶反应的酶; 以及催化导致将过氧化氢或还原型辅酶转化成另一种物质的反应的酶，以及含有第二选择性反应促进剂的第二试剂，其能够选择性地使脂蛋白脂肪酶与包含在极低密度脂蛋白中的甘油三酯 ，中密度脂蛋白，低密度脂蛋白和高密度脂蛋白，以及选择性测定使用上述试剂的测试样品中非常低密度脂蛋白和中密度脂蛋白或非常低密度脂蛋白中所含的甘油三酯的方法。