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132 条记录 (耗时 0.029 秒)

    Short yoke length planar writer with low DC coil resistance
    111.
    发明申请
    Short yoke length planar writer with low DC coil resistance 有权
    具有低直流线圈电阻的短轭长度平面刻录机

    公开(公告)号：US20050024769A1

    公开(公告)日：2005-02-03

    申请号：US10633105

    申请日：2003-08-01

    申请人： Cherng Han ,  Mao-Min Chen

    发明人： Cherng Han ,  Mao-Min Chen

    IPC分类号： G11B5/147 ,  G11B5/31 ,  G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/3106 ,  Y10T29/49032

    摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention a layer of alumina is deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a two coil planar magnetic write head is described.

    摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，一层氧化铝沉积在多余的光致抗蚀剂的表面上，随后开始CMP。 氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。 一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。 描述了该方法在制造双线圈平面磁性写入头上的应用。

    Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer
    113.
    发明授权
    Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer 失效
    光电阻框架电磁换能器极层采用高磁导率种子层

    公开(公告)号：US5843521A

    公开(公告)日：1998-12-01

    申请号：US897796

    申请日：1997-07-21

    申请人： Kochan Ju ,  Mao-Min Chen ,  Yimin Guo

    发明人： Kochan Ju ,  Mao-Min Chen ,  Yimin Guo

    IPC分类号： G11B5/31 ,  G11B5/39 ,  B05D5/12

    CPC分类号： G11B5/3967 ,  G11B5/3103 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3163 ,  Y10T428/1186 ,  Y10T428/265 ,  Y10T428/31678

    摘要： A method for forming a magnetic transducer, and a magnetic transducer formed through the method. There is first provided a substrate. There is then formed over the substrate a first magnetic pole layer. There is then formed upon the first magnetic pole layer a gap filling dielectric layer. There is then formed upon the gap filling dielectric layer a seed layer. There is then formed upon the seed layer a photoresist frame employed in a photoresist frame plating method for forming a plated second magnetic pole layer upon the seed layer, where a base of a sidewall of the photoresist frame has a taper which provides a notch within an edge of the plated second magnetic pole layer at its interface with the seed layer. There is then plated through the photoresist frame plating method the plated second magnetic pole layer upon the seed layer, where the seed layer is formed of a thickness and of a material which compensates when electromagnetically energizing the magnetic transducer for a magnetic write field gradient boundary decompression between the first magnetic pole layer and the plated second magnetic pole layer due to the notch within the plated second magnetic pole layer. The method for forming the magnetic transducer contemplates the magnetic transducer formed through the method.

    摘要翻译： 一种用于形成磁换能器的方法，以及通过该方法形成的磁换能器。 首先提供基板。 然后在衬底上形成第一磁极层。 然后在第一磁极层上形成间隙填充介电层。 然后在填充介电层的间隙上形成种子层。 然后在种子层上形成光致抗蚀剂框架，该抗蚀剂框架用于在种子层上形成镀覆的第二磁极层的光致抗蚀剂框架镀覆方法，其中光致抗蚀剂框架的侧壁的基部具有锥形，其在 电镀第二磁极层的边缘与其种子层的界面处。 然后通过光致抗蚀剂框架电镀方法将电镀的第二磁极层电镀在种子层上，其中籽晶层由厚度形成，并且当材料在磁写入场梯度边界解压缩时对磁换能器进行电磁激励时补偿 由于镀覆的第二磁极层内的凹口，在第一磁极层和镀覆的第二磁极层之间。 用于形成磁换能器的方法考虑了通过该方法形成的磁换能器。

    Magnetoresistive sensor employing an exchange-bias enhancing layer with a variable-composition transition region
    114.
    发明授权
    Magnetoresistive sensor employing an exchange-bias enhancing layer with a variable-composition transition region 失效
    采用具有可变成分过渡区域的交换偏置增强层的磁阻传感器

    公开(公告)号：US5668687A

    公开(公告)日：1997-09-16

    申请号：US593654

    申请日：1996-01-29

    申请人： Mao-Min Chen ,  Kenneth Ting-Yuan Kung ,  Ching Hwa Tsang

    发明人： Mao-Min Chen ,  Kenneth Ting-Yuan Kung ,  Ching Hwa Tsang

    IPC分类号： G11B5/39 ,  H01F10/32

    CPC分类号： B82Y25/00 ,  G11B5/3903 ,  G11B5/399 ,  H01F10/3218

    摘要： An exchange-biased magnetoresistive (MR) read transducer in which the MR layer composition is changed at the interface with an antiferromagnetic layer, which is in direct contact with the ferromagnetic MR layer. The exchange-bias field strength H.sub.UA in the MR layer is increased at room temperature by adding a specially-optimized transition region in the ferromagnetic MR layer at the interface. The percentage of iron in the ferromagnetic alloy varies from a higher value at the interface to a lower value at the opposite end of the transition region. The higher iron ratio at the antiferromagnetic interface enhances the exchange-bias field H.sub.UA and the lower iron ratio throughout the bulk of the ferromagnetic MR layer maintains the lower coercivity preferred in the layer, thereby enhancing the longitudinal bias field with respect to the MR coercivity. Advantageously, the enhanced longitudinal bias effect of the special ferromagnetic transition region does not reduce the critical temperature T.sub.cr at which the temperature-dependent exchange-bias field H.sub.UA (T) approaches zero.

    摘要翻译： 交换偏置磁阻（MR）读取传感器，其中MR层组成在与铁磁MR层直接接触的反铁磁层的界面处改变。 MR层中的交换偏置场强HUA在室温下通过在界面处的铁磁性MR层中加入特别优化的过渡区而增加。 铁磁合金中铁的百分比从界面处的较高值到过渡区域相对端的较低值变化。 反铁磁性界面处铁含量越高，交换偏置场HUA越大，铁磁MR层整体的铁含量越低，维持层中优选的矫顽力越低，从而增强纵向偏磁场相对于MR矫顽力。 有利的是，特殊铁磁过渡区的增强的纵向偏置效应不会降低温度相关的交换偏置场HUA（T）接近零的临界温度Tcr。

    Magnetoresistive read head with back filled gap insulation layers
    115.
    发明授权
    Magnetoresistive read head with back filled gap insulation layers 失效
    磁阻读头与后填充间隙绝缘层

    公开(公告)号：US5617277A

    公开(公告)日：1997-04-01

    申请号：US589813

    申请日：1996-01-22

    申请人： Mao-Min Chen ,  Mohamad T. Krounbi

    发明人： Mao-Min Chen ,  Mohamad T. Krounbi

    IPC分类号： G01R33/09 ,  G01R33/06 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

    CPC分类号： G11B5/3929 ,  G11B5/3103

    摘要： A magnetic disk storage system with high linear resolution magnetoresistive (MR) head or heads comprising a dielectric substrate, a first magnetic shield, a first gap insulation layer, an MR stripe element, conductive leads, a second gap insulation layer, and a second magnetic shield. Back-fill layers of insulation material are deposited on the first gap insulation layer adjacent the MR element and/or on the second gap insulation layer in thicknesses substantially sufficient to at least in part replace insulation material removed during the various processing steps to ensure against short circuiting of the MR element. The MR element preferably is a trilayer comprising a soft MR sensing layer biased at an acute angle to the lengthwise dimension of the element but free to rotate therefrom according to the magnitude and direction of applied magnetic field; a soft magnetic or hard magnetic layer with magnetization fixed in a direction perpendicular to the lengthwise direction of the MR element; and a spacer layer separating these two layers.

    摘要翻译： 一种具有高线性分辨率磁阻（MR）磁头或磁头的磁盘存储系统，包括电介质基板，第一磁屏蔽，第一间隙绝缘层，MR条形元件，导电引线，第二间隙绝缘层和第二磁 屏蔽。 绝缘材料的填充层沉积在与MR元件相邻的第一间隙绝缘层和/或第二间隙绝缘层上，其厚度基本上足以至少部分地替代在各种加工步骤期间去除的绝缘材料，以确保短时间 MR元件的回路。 MR元件优选是三层，其包括根据所施加的磁场的大小和方向以与该元件的纵向尺寸成锐角倾斜的柔性MR感测层，但可自由旋转; 软磁性或硬磁性层，其磁化方向固定在与MR元件的长度方向垂直的方向上; 以及分隔这两层的间隔层。

    Method of manufacture for an improved magnetoresistive read transducer
    117.
    发明授权
    Method of manufacture for an improved magnetoresistive read transducer 失效
    改进的磁阻读取传感器的制造方法

    公开(公告)号：US5344669A

    公开(公告)日：1994-09-06

    申请号：US125987

    申请日：1993-09-23

    申请人： Mao-Min Chen ,  Ching H. Tsang

    发明人： Mao-Min Chen ,  Ching H. Tsang

    IPC分类号： G11B5/39 ,  B05D5/12

    CPC分类号： G11B5/399

    摘要： A magnetoresistive (MR) read transducer in which a layered structure comprising an MR layer, an antiferromagnetic material in direct contact with the MR layer and a thin layer of interdiffusion material in contact with the layer of antiferromagnetic material is subjected to a heating process to a temperature within a chosen temperature for a chosen time to form a magnetic interface between the antiferromagnetic material the MR layer. The magnetic interface produces a high level of exchange bias with the MR layer.

    摘要翻译： 一种磁阻（MR）读取传感器，其中包括MR层，与MR层直接接触的反铁磁材料和与反铁磁材料层接触的相互扩散材料的薄层的分层结构经受加热处理 温度在所选择的温度内选定的时间，以形成反铁磁材料MR层之间的磁界面。 磁性界面与MR层产生高水平的交换偏压。

    Underlayer for high performance magnetic tunneling junction MRAM
    118.
    发明授权
    Underlayer for high performance magnetic tunneling junction MRAM 有权
    高性能磁隧道结MRAM底层

    公开(公告)号：US07999360B2

    公开(公告)日：2011-08-16

    申请号：US12589466

    申请日：2009-10-23

    申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

    发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

    IPC分类号： H01L23/552

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

    摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer of NiCr, NiFe, or NiFeCr layer on the oc-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

    摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是在oc-TaN层上的NiCr，NiFe或NiFeCr层的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高的MR比，高的Vb和RA，与基于优化的Ta覆盖层的MTJ获得的结果相似。

    Novel underlayer for high performance magnetic tunneling junction MRAM
    119.
    发明申请
    Novel underlayer for high performance magnetic tunneling junction MRAM 有权
    用于高性能磁隧道结MRAM的新型底层

    公开(公告)号：US20100047929A1

    公开(公告)日：2010-02-25

    申请号：US12589465

    申请日：2009-10-23

    申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

    发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

    IPC分类号： H01L21/8246

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

    摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

    摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高的MR比，高的Vb和RA，与基于优化的Ta覆盖层的MTJ获得的结果相似。