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公开(公告)号：US10204947B2
公开(公告)日：2019-02-12
申请号：US15261324
申请日：2016-09-09
发明人： Teng-Sheng Chen , Jau-Jan Deng , Chia-Yang Chang , Wei-Feng Lin
IPC分类号： G02B3/00 , H04N5/247 , H04N5/359 , H04N5/374 , H01L27/146
摘要： A cover-glass-free array camera with individually light-shielded cameras includes an image sensor array having a plurality of photosensitive pixel arrays formed in a silicon substrate, and a lens array bonded to the silicon substrate, wherein the lens array includes (a) a plurality of imaging objectives respectively registered to the photosensitive pixel arrays to form respective individual cameras therewith, and (b) a first opaque material between each of the imaging objectives to prevent crosstalk between individual cameras.
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公开(公告)号：US10165210B1
公开(公告)日：2018-12-25
申请号：US15909267
申请日：2018-03-01
发明人： Rui Wang , Hiroaki Ebihara
IPC分类号： H04N3/14 , H04N5/335 , H04N5/367 , H04N5/378 , H04N5/217 , H04N5/235 , H04N5/369 , H04N5/357 , H04N5/3745
摘要： A photodiode is adapted to accumulate image charges in response to incident light. A transfer transistor is coupled between the photodiode and a floating diffusion to transfer the image charges accumulated in the photodiode to the floating diffusion. A reset transistor is coupled to supply a supply voltage to the floating diffusion. A source follower transistor is coupled to receive voltage of the floating diffusion from a SF gate terminal and provide an amplified signal to a source follower source terminal. A row select transistor is coupled to receive the amplified signal from the SF source terminal and output the amplified signal to a bitline. A bitline enable transistor controlled by a bitline enable voltage is coupled to link between the bitline and a bitline source node. The bitline is coupled to an idle voltage generator, a blacksun voltage generator, and a clamp voltage generator. These three voltage generators are each constructed out of a plurality of modified dummy pixels based on the dummy pixels in the dummy rows of an image sensor pixel array.
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公开(公告)号：US10163954B2
公开(公告)日：2018-12-25
申请号：US15096136
申请日：2016-04-11
发明人： Yumei Su , Chi-Chih Huang , Wei-Feng Lin
IPC分类号： H01L27/146 , H01L21/78 , H01L21/86
摘要： A trenched device wafer includes a device substrate layer having a top surface; a plurality of devices in the device substrate layer, and a trench in the top surface. The trench extends into the device substrate layer, and is located between a pair of adjacent devices of the plurality of devices. A method for forming a device die from a device wafer includes forming a trench in a top surface of the device wafer between two adjacent devices of the device wafer. The trench has a bottom surface located (a) at a first depth beneath the top surface and (b) at a first height above a wafer bottom surface. The method also includes, after forming the trench, decreasing a thickness of the device wafer, between the two adjacent devices, to a thickness less than the first height.
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公开(公告)号：US10154234B2
公开(公告)日：2018-12-11
申请号：US15071934
申请日：2016-03-16
发明人： Chengming Liu , Jizhang Shan
IPC分类号： H04N5/235 , H04N9/04 , H04N9/73 , H04N5/232 , H01L27/146
摘要： An imaging system includes a primary imager and plurality of 3A-control sensors. The primary imager has a first field of view and includes a primary image sensor and a primary imaging lens with a first optical axis. The primary image sensor has a primary pixel array and control circuitry communicatively coupled thereto. The plurality of 3A-control sensors includes at least one of a peripheral imager and a 3A-control sensor. The peripheral imager, if included, has a second field of view including (i) at least part of the first field of view and (ii) a phase-difference auto-focus (PDAF) sensor and a peripheral imaging lens, the PDAF sensor being separate from the primary image sensor. The 3A-control sensor, if included, is separate from the primary pixel array and communicatively connected to the control circuitry to provide one of auto-white balance and exposure control for the primary pixel array.
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公开(公告)号：US10148936B2
公开(公告)日：2018-12-04
申请号：US13932736
申请日：2013-07-01
发明人： Hui Wei , Changmeng Liu
IPC分类号： H04N13/02 , H04N9/07 , H04N13/207 , H04N13/254 , H04N9/04 , H04N13/257
摘要： An imaging system and method for generating a three-dimensional color image include an opening for allowing light from an object to enter the imaging system. Each sensor element in an array of sensor elements receives a portion of the light and generates a signal indicative of an intensity of the received portion of the light. Light from an optical element impinges on a filter comprising a plurality of filter regions, each filter region passes a predetermined band of wavelengths of the light and is associated with and disposed in alignment with one of the sensor elements such that light passing through each filter region impinges on the sensor associated and in alignment with the filter element. At least one of the filter regions is constructed to pass a visible color band, and at least one other of the filter regions is constructed to pass an infrared band.
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公开(公告)号：US10141458B2
公开(公告)日：2018-11-27
申请号：US15216049
申请日：2016-07-21
发明人： Bowei Zhang , Duli Mao
IPC分类号： H01L31/02 , H01L27/14 , H01L31/10 , G04F10/00 , H04N5/374 , H01L31/0224 , H01L31/107 , H01L31/0216 , H01L27/146 , H04N5/378
摘要： A photon detection device includes a single photon avalanche diode (SPAD) including a multiplication junction defined at an interface between n doped and p doped layers of the SPAD in a first region of a semiconductor layer. A vertical gate structure surrounds the SPAD in the semiconductor layer to isolate the SPAD in the first region from a second region of the semiconductor layer on an opposite side of the vertical gate structure. The SPAD laterally extends within the first region of semiconductor layer to the vertical gate structure. An inversion layer is generated in the SPAD around a perimeter of the SPAD proximate to the vertical gate structure in response to a gate bias voltage coupled to the vertical gate structure. The inversion layer isolates the SPAD from the second region of the semiconductor layer on the opposite side of the vertical gate structure.
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公开(公告)号：US10141360B2
公开(公告)日：2018-11-27
申请号：US15280775
申请日：2016-09-29
发明人： Kevin Ka Kei Leung , Dajiang Yang
IPC分类号： H01L27/146 , H04N5/374 , H04N5/378
摘要： An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global shutter gate transistor, disposed in the semiconductor material and coupled to the photodiode, a storage transistor disposed in the semiconductor material, an optical isolation structure disposed in the semiconductor material to isolate a sidewall of the storage transistor from stray light and stray charge. The optical isolation structure also includes a deep trench isolation structure that is filled with tungsten and a P+ passivation formed over an interior sidewall of the deep trench optical isolation structure. Each one of the pixel cells also include control circuitry coupled to the pixel array to control operation of the pixel array and readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.
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公开(公告)号：US10116889B2
公开(公告)日：2018-10-30
申请号：US15443783
申请日：2017-02-27
发明人： Gang Chen , Qin Wang , Duli Mao , Dyson H. Tai , Lindsay Alexander Grant
摘要： An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.
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公开(公告)号：US10102435B2
公开(公告)日：2018-10-16
申请号：US15233675
申请日：2016-08-10
发明人： Lei Yang
摘要： A lane departure warning system includes a memory and a processor for validating a candidate region as including an image of a lane marker on the road is disclosed. The candidate region is identified within a latest road image of a temporal sequence of road images captured from the front of a vehicle traveling along a road. The memory stores non-transitory computer-readable instructions and adapted to store the road image. The image processor is adapted to execute the instructions to, when no previously-verified region and no previously-rejected region aligns with the candidate region: (i) determine a minimum distance between the candidate region and a previously-verified region of a previously-captured road image of the sequence, (ii) when the minimum distance exceeds a threshold distance, store the candidate region as a verified region, and (iii) when the minimum distance is less than the threshold distance, store the candidate region as a rejected region.
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公开(公告)号：US10079990B2
公开(公告)日：2018-09-18
申请号：US15277648
申请日：2016-09-27
发明人： Hiroaki Ebihara , Zheng Yang
CPC分类号： H04N5/378 , H03K5/2481
摘要： Apparatuses and method for an image sensor with increased analog to digital conversion range and reduced noise are described herein. An example method may include disabling a first auto-zero switch of a comparator, the first auto-zero switch coupled to auto-zero a reference voltage input of the comparator, adjusting an auto-zero offset voltage of a ramp voltage provided to the reference voltage input of the comparator, and disabling a second auto-zero switch of the comparator, the second auto-zero switch coupled to auto-zero a bitline input of the comparator.
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